Kelvin probe force microscopy as a tool for characterizing chemical sensors

R. Grover, B. McCarthy, Y. Zhao, G. E. Jabbour, D. Sarid, G. M. Laws, B. R. Takulapalli, T. J. Thornton, John Devens Gust

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Abstract

We report on the use of Kelvin probe force microscopy in measuring the shift of the contact potential difference of micron-scale areas. The experimental results provide important information required for understanding and modeling the electrical characteristics of chemically sensitive field-effect transistors (ChemFETs). The temporal evolution in the shift of the contact potential difference of chemically sensitive monolayers of free-base porphyrin and zinc-porphyrin on exposure to pyridine gas was studied and their different behavior observed. The Kelvin probe force microscopy data on nanometer-scale areas were in agreement with those obtained with a conventional Kelvin probe on centimeter-scale areas. The accuracy of the measured shift in contact potential difference upon exposure to trace amounts of gas indicates the utility of Kelvin probe force microscopy as a means to characterize the operation of exposed-gate ChemFETs.

Original languageEnglish
Pages (from-to)3926-3928
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number17
DOIs
Publication statusPublished - Oct 25 2004

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Grover, R., McCarthy, B., Zhao, Y., Jabbour, G. E., Sarid, D., Laws, G. M., ... Gust, J. D. (2004). Kelvin probe force microscopy as a tool for characterizing chemical sensors. Applied Physics Letters, 85(17), 3926-3928. https://doi.org/10.1063/1.1810209