Kinetic study of Si recrystallization in the reaction between Au and polycrystalline-Si films

L. H. Allen, J. W. Mayer, K. N. Tu, Leonard C Feldman

Research output: Contribution to journalArticle

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Abstract

The kinetics of Si crystallization during isothermal annealing of Au/polycrystalline-Si bilayers were investigated via scanning electron microscopy and in situ sheet-resistance measurements. Large crystals of Si grow within the Au layer in the shape of two-dimensional plates of thickness equal to that of the Au layer. The Si crystals grow at an average rate which follows a t2 time dependence with an Arrhenius temperature dependence of e/kTE, where E2.4 eV. The overall transformation rate is a product of the two separable processes: the first determines the number of crystals and the second the growth rate of the crystals. At the beginning of the reaction the number of crystals, N, per unit area is fixed, remains constant throughout the anneal, and has an Arrhenius temperature dependence of NeN-E/kT where EN1.0 eV. The crystals grow at a constant growth rate and have an Arrhenius temperature dependence of vev-E/kT with Ev1.9 eV. Final analysis of the overall transformation relates the activation energy of the total process to the activation energy of adding or removing an atom from the Si surface (Ev) and the diffusion of Si in Au (ED): E=3/2Ev- 1) / 2 ED.. AE

Original languageEnglish
Pages (from-to)8213-8220
Number of pages8
JournalPhysical Review B
Volume41
Issue number12
DOIs
Publication statusPublished - 1990

Fingerprint

Crystals
Kinetics
kinetics
crystals
Crystallization
temperature dependence
Activation energy
Isothermal annealing
activation energy
Sheet resistance
Temperature
time dependence
Atoms
Scanning electron microscopy
crystallization
scanning electron microscopy
annealing
products
atoms

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Kinetic study of Si recrystallization in the reaction between Au and polycrystalline-Si films. / Allen, L. H.; Mayer, J. W.; Tu, K. N.; Feldman, Leonard C.

In: Physical Review B, Vol. 41, No. 12, 1990, p. 8213-8220.

Research output: Contribution to journalArticle

Allen, L. H. ; Mayer, J. W. ; Tu, K. N. ; Feldman, Leonard C. / Kinetic study of Si recrystallization in the reaction between Au and polycrystalline-Si films. In: Physical Review B. 1990 ; Vol. 41, No. 12. pp. 8213-8220.
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