Abstract
Nanometer-scale FIO (field-induced oxidation) features were patterned on a hydrogen terminated silicon substrate using conductive atomic force microscopy (AFM) in an inert nonpolar organic liquid. An alternate logarithmetic model was proposed in which variations in the oxide growth rate were attributed to the transition of water at the AFM tip-sample junction from liquid water to vapor water. The oxide growth kinetics showed a reduction in the growth rate and a nonlinear dependence on voltage at long pulse times, as a function of applied bias and voltage pulse-time. It was observed that the oxide growth kinetics were consistent with a space-charge limited growth mechanism. The results suggested that in the presence of a water meniscus, the surrounding organic solvent may have little effect on the FIO process. It was concluded that FIO in hexadecane proceeds by a similar mechanism to FIO in the air.
| Original language | English |
|---|---|
| Pages (from-to) | 1377-1380 |
| Number of pages | 4 |
| Journal | Advanced Materials |
| Volume | 18 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Jun 6 2006 |
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ASJC Scopus subject areas
- Materials Science(all)
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Kinetics and mechanism of atomic force microscope local oxidation on hydrogen-passiv ated silicon in inert organic solvents. / Kinser, C. Reagan; Schmitz, Matthew J.; Hersam, Mark C.
In: Advanced Materials, Vol. 18, No. 11, 06.06.2006, p. 1377-1380.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Kinetics and mechanism of atomic force microscope local oxidation on hydrogen-passiv ated silicon in inert organic solvents
AU - Kinser, C. Reagan
AU - Schmitz, Matthew J.
AU - Hersam, Mark C
PY - 2006/6/6
Y1 - 2006/6/6
N2 - Nanometer-scale FIO (field-induced oxidation) features were patterned on a hydrogen terminated silicon substrate using conductive atomic force microscopy (AFM) in an inert nonpolar organic liquid. An alternate logarithmetic model was proposed in which variations in the oxide growth rate were attributed to the transition of water at the AFM tip-sample junction from liquid water to vapor water. The oxide growth kinetics showed a reduction in the growth rate and a nonlinear dependence on voltage at long pulse times, as a function of applied bias and voltage pulse-time. It was observed that the oxide growth kinetics were consistent with a space-charge limited growth mechanism. The results suggested that in the presence of a water meniscus, the surrounding organic solvent may have little effect on the FIO process. It was concluded that FIO in hexadecane proceeds by a similar mechanism to FIO in the air.
AB - Nanometer-scale FIO (field-induced oxidation) features were patterned on a hydrogen terminated silicon substrate using conductive atomic force microscopy (AFM) in an inert nonpolar organic liquid. An alternate logarithmetic model was proposed in which variations in the oxide growth rate were attributed to the transition of water at the AFM tip-sample junction from liquid water to vapor water. The oxide growth kinetics showed a reduction in the growth rate and a nonlinear dependence on voltage at long pulse times, as a function of applied bias and voltage pulse-time. It was observed that the oxide growth kinetics were consistent with a space-charge limited growth mechanism. The results suggested that in the presence of a water meniscus, the surrounding organic solvent may have little effect on the FIO process. It was concluded that FIO in hexadecane proceeds by a similar mechanism to FIO in the air.
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UR - http://www.scopus.com/inward/citedby.url?scp=33745126306&partnerID=8YFLogxK
U2 - 10.1002/adma.200501231
DO - 10.1002/adma.200501231
M3 - Article
VL - 18
SP - 1377
EP - 1380
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 11
ER -