Kinetics and relaxation of nonequilibrium electron-hole system in direct gap semiconductors

V. Dneprovskii, Victor I Klimov, M. Novikov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The drastic modification of the electron-hole plasma emission spectra arising from the significant reduction of the energy relaxation rate was observed under intensive picosecond interband excitation. The registered difference in the stimulated emission kinetics at low and high excitation levels evidences for the two different gain (recombination) mechanisms (of the plasma and excitonic origin), although no significant changes were observed in the luminescence spectra.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by IOP Publishing Ltd
Pages353-356
Number of pages4
Volume126
ISBN (Print)0750301988
Publication statusPublished - 1991
EventProceedings of the 7th International Symposium on Ultrafast Processes in Spectroscopy - Bayreuth, Ger
Duration: Oct 7 1991Oct 10 1991

Other

OtherProceedings of the 7th International Symposium on Ultrafast Processes in Spectroscopy
CityBayreuth, Ger
Period10/7/9110/10/91

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Kinetics and relaxation of nonequilibrium electron-hole system in direct gap semiconductors'. Together they form a unique fingerprint.

  • Cite this

    Dneprovskii, V., Klimov, V. I., & Novikov, M. (1991). Kinetics and relaxation of nonequilibrium electron-hole system in direct gap semiconductors. In Institute of Physics Conference Series (Vol. 126, pp. 353-356). Publ by IOP Publishing Ltd.