Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation

Zengjun Chen, Yi Xu, Eric Garfunkel, Leonard C Feldman, Temel Buyuklimanli, Wei Ou, Jeff Serfass, Alan Wan, Sarit Dhar

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Nitridation of the SiO2-4H-SiC interface using post-oxidation annealing in nitric oxide (NO) is the most established process for obtaining high quality 4H-SiC MOS interfaces. In this paper, a detailed study of the interfacial nitrogen uptake kinetics is reported for the (0 0 0 1) Si-terminated and (0 0 0-1) C-terminated crystal faces of 4H-SiC. The results indicate a significantly faster kinetics for the C-face compared to the Si-face. For the first time, the correlation between N-uptake and the interface trap density reduction was observed on the C-face. First-order kinetics models are used to fit the nitrogen up-take. Empirical equations predicting N coverage at the SiO2-4H-SiC interface via NO annealing have been established. The result also shows that the N-uptake rate is associated with the oxidation rate.

Original languageEnglish
Pages (from-to)593-597
Number of pages5
JournalApplied Surface Science
Volume317
DOIs
Publication statusPublished - Oct 30 2014

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Nitric oxide
Passivation
Nitric Oxide
Nitrogen
Kinetics
Annealing
Oxidation
Nitridation
Crystals

Keywords

  • Interface
  • Kinetics
  • Nitridation
  • Silicon carbide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation. / Chen, Zengjun; Xu, Yi; Garfunkel, Eric; Feldman, Leonard C; Buyuklimanli, Temel; Ou, Wei; Serfass, Jeff; Wan, Alan; Dhar, Sarit.

In: Applied Surface Science, Vol. 317, 30.10.2014, p. 593-597.

Research output: Contribution to journalArticle

Chen, Zengjun ; Xu, Yi ; Garfunkel, Eric ; Feldman, Leonard C ; Buyuklimanli, Temel ; Ou, Wei ; Serfass, Jeff ; Wan, Alan ; Dhar, Sarit. / Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation. In: Applied Surface Science. 2014 ; Vol. 317. pp. 593-597.
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AU - Ou, Wei

AU - Serfass, Jeff

AU - Wan, Alan

AU - Dhar, Sarit

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