Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation

Zengjun Chen, Yi Xu, Eric Garfunkel, Leonard C. Feldman, Temel Buyuklimanli, Wei Ou, Jeff Serfass, Alan Wan, Sarit Dhar

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Nitridation of the SiO2-4H-SiC interface using post-oxidation annealing in nitric oxide (NO) is the most established process for obtaining high quality 4H-SiC MOS interfaces. In this paper, a detailed study of the interfacial nitrogen uptake kinetics is reported for the (0 0 0 1) Si-terminated and (0 0 0-1) C-terminated crystal faces of 4H-SiC. The results indicate a significantly faster kinetics for the C-face compared to the Si-face. For the first time, the correlation between N-uptake and the interface trap density reduction was observed on the C-face. First-order kinetics models are used to fit the nitrogen up-take. Empirical equations predicting N coverage at the SiO2-4H-SiC interface via NO annealing have been established. The result also shows that the N-uptake rate is associated with the oxidation rate.

Original languageEnglish
Pages (from-to)593-597
Number of pages5
JournalApplied Surface Science
Publication statusPublished - Oct 30 2014


  • Interface
  • Kinetics
  • Nitridation
  • Silicon carbide

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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