Kinetics of NO nitridation in SiO2/4H-SiC

K. McDonald; L. C. Feldman; R. A. Weller; G. Y. Chung; C. C. Tin; J. R. Williams

doi:10.1063/1.1539541

Kinetics of NO nitridation in SiO₂/4H-SiC

K. McDonald, L. C. Feldman, R. A. Weller, G. Y. Chung, C. C. Tin, J. R. Williams

Rutgers University

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

The kinetics of the nitridation of SiO₂/SiC by NO were studied. NO was found to react with silicon and carbon at the interface to incorporate nitrogen. It was also observed that O₂ produced by the thermal decomposition of NO oxidized the substrate and removed nitrogen from the interface. Nitridation and oxidation were found to equalize after a temperature-dependent time. At the equilibrium stage, the nitrogen content was found to saturate.

Original language	English
Pages (from-to)	2257-2261
Number of pages	5
Journal	Journal of Applied Physics
Volume	93
Issue number	4
DOIs	https://doi.org/10.1063/1.1539541
Publication status	Published - Feb 15 2003

ASJC Scopus subject areas

Physics and Astronomy(all)

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AB - The kinetics of the nitridation of SiO2/SiC by NO were studied. NO was found to react with silicon and carbon at the interface to incorporate nitrogen. It was also observed that O2 produced by the thermal decomposition of NO oxidized the substrate and removed nitrogen from the interface. Nitridation and oxidation were found to equalize after a temperature-dependent time. At the equilibrium stage, the nitrogen content was found to saturate.

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