Kinetics of NO nitridation in SiO2/4H-SiC

K. McDonald; L. C. Feldman; R. A. Weller; G. Y. Chung; C. C. Tin; J. R. Williams

doi:10.1063/1.1539541

Kinetics of NO nitridation in SiO₂/4H-SiC

K. McDonald, L. C. Feldman, R. A. Weller, G. Y. Chung, C. C. Tin, J. R. Williams

Rutgers University

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Abstract

The kinetics of the nitridation of SiO₂/SiC by NO were studied. NO was found to react with silicon and carbon at the interface to incorporate nitrogen. It was also observed that O₂ produced by the thermal decomposition of NO oxidized the substrate and removed nitrogen from the interface. Nitridation and oxidation were found to equalize after a temperature-dependent time. At the equilibrium stage, the nitrogen content was found to saturate.

Original language	English
Pages (from-to)	2257-2261
Number of pages	5
Journal	Journal of Applied Physics
Volume	93
Issue number	4
DOIs	https://doi.org/10.1063/1.1539541
Publication status	Published - Feb 15 2003

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

McDonald, K., Feldman, L. C., Weller, R. A., Chung, G. Y., Tin, C. C., & Williams, J. R. (2003). Kinetics of NO nitridation in SiO₂/4H-SiC. Journal of Applied Physics, 93(4), 2257-2261. https://doi.org/10.1063/1.1539541

@article{19a54e986de74beb8777532847b7ef68,

title = "Kinetics of NO nitridation in SiO2/4H-SiC",

abstract = "The kinetics of the nitridation of SiO2/SiC by NO were studied. NO was found to react with silicon and carbon at the interface to incorporate nitrogen. It was also observed that O2 produced by the thermal decomposition of NO oxidized the substrate and removed nitrogen from the interface. Nitridation and oxidation were found to equalize after a temperature-dependent time. At the equilibrium stage, the nitrogen content was found to saturate.",

author = "K. McDonald and Feldman, {L. C.} and Weller, {R. A.} and Chung, {G. Y.} and Tin, {C. C.} and Williams, {J. R.}",

year = "2003",

month = feb

day = "15",

doi = "10.1063/1.1539541",

language = "English",

volume = "93",

pages = "2257--2261",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Kinetics of NO nitridation in SiO2/4H-SiC

AU - McDonald, K.

AU - Feldman, L. C.

AU - Weller, R. A.

AU - Chung, G. Y.

AU - Tin, C. C.

AU - Williams, J. R.

PY - 2003/2/15

Y1 - 2003/2/15

N2 - The kinetics of the nitridation of SiO2/SiC by NO were studied. NO was found to react with silicon and carbon at the interface to incorporate nitrogen. It was also observed that O2 produced by the thermal decomposition of NO oxidized the substrate and removed nitrogen from the interface. Nitridation and oxidation were found to equalize after a temperature-dependent time. At the equilibrium stage, the nitrogen content was found to saturate.

AB - The kinetics of the nitridation of SiO2/SiC by NO were studied. NO was found to react with silicon and carbon at the interface to incorporate nitrogen. It was also observed that O2 produced by the thermal decomposition of NO oxidized the substrate and removed nitrogen from the interface. Nitridation and oxidation were found to equalize after a temperature-dependent time. At the equilibrium stage, the nitrogen content was found to saturate.

UR - http://www.scopus.com/inward/record.url?scp=0037442436&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037442436&partnerID=8YFLogxK

U2 - 10.1063/1.1539541

DO - 10.1063/1.1539541

M3 - Article

AN - SCOPUS:0037442436

VL - 93

SP - 2257

EP - 2261

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

ER -

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10.1063/1.1539541