Kinetics of NO nitridation in SiO2/4H-SiC

K. McDonald; L. C. Feldman; R. A. Weller; G. Y. Chung; C. C. Tin; J. R. Williams

doi:10.1063/1.1539541

Kinetics of NO nitridation in SiO₂/4H-SiC

K. McDonald, L. C. Feldman, R. A. Weller, G. Y. Chung, C. C. Tin, J. R. Williams

Rutgers University

Research output: Contribution to journal › Article

46 Citations (Scopus)

Abstract

The kinetics of the nitridation of SiO₂/SiC by NO were studied. NO was found to react with silicon and carbon at the interface to incorporate nitrogen. It was also observed that O₂ produced by the thermal decomposition of NO oxidized the substrate and removed nitrogen from the interface. Nitridation and oxidation were found to equalize after a temperature-dependent time. At the equilibrium stage, the nitrogen content was found to saturate.

Original language	English
Pages (from-to)	2257-2261
Number of pages	5
Journal	Journal of Applied Physics
Volume	93
Issue number	4
DOIs	https://doi.org/10.1063/1.1539541
Publication status	Published - Feb 15 2003

ASJC Scopus subject areas

Physics and Astronomy(all)

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McDonald, K., Feldman, L. C., Weller, R. A., Chung, G. Y., Tin, C. C., & Williams, J. R. (2003). Kinetics of NO nitridation in SiO₂/4H-SiC. Journal of Applied Physics, 93(4), 2257-2261. https://doi.org/10.1063/1.1539541

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