Abstract
The kinetics of the nitridation of SiO2/SiC by NO were studied. NO was found to react with silicon and carbon at the interface to incorporate nitrogen. It was also observed that O2 produced by the thermal decomposition of NO oxidized the substrate and removed nitrogen from the interface. Nitridation and oxidation were found to equalize after a temperature-dependent time. At the equilibrium stage, the nitrogen content was found to saturate.
Original language | English |
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Pages (from-to) | 2257-2261 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 93 |
Issue number | 4 |
DOIs | |
Publication status | Published - Feb 15 2003 |
ASJC Scopus subject areas
- Physics and Astronomy(all)