Kinetics of NO nitridation in SiO2/4H-SiC

K. McDonald, L. C. Feldman, R. A. Weller, G. Y. Chung, C. C. Tin, J. R. Williams

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Abstract

The kinetics of the nitridation of SiO2/SiC by NO were studied. NO was found to react with silicon and carbon at the interface to incorporate nitrogen. It was also observed that O2 produced by the thermal decomposition of NO oxidized the substrate and removed nitrogen from the interface. Nitridation and oxidation were found to equalize after a temperature-dependent time. At the equilibrium stage, the nitrogen content was found to saturate.

Original languageEnglish
Pages (from-to)2257-2261
Number of pages5
JournalJournal of Applied Physics
Volume93
Issue number4
DOIs
Publication statusPublished - Feb 15 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    McDonald, K., Feldman, L. C., Weller, R. A., Chung, G. Y., Tin, C. C., & Williams, J. R. (2003). Kinetics of NO nitridation in SiO2/4H-SiC. Journal of Applied Physics, 93(4), 2257-2261. https://doi.org/10.1063/1.1539541