KSb5S8: A wide bandgap phase-change material for ultra high density rewritable information storage

Theodora Kyratsi; Konstantinos Chrissafis; Joseph Wachter; Konstantinos M. Paraskevopoulos; Mercouri G. Kanatzidis

doi:10.1002/adma.200304994

KSb₅S₈: A wide bandgap phase-change material for ultra high density rewritable information storage

Theodora Kyratsi, Konstantinos Chrissafis, Joseph Wachter, Konstantinos M. Paraskevopoulos, Mercouri G. Kanatzidis

Northwestern University

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

The reversible glassformation and glass crystallization properties of KSb₃S₈ was described. On the basis of glass transition and crystallization kinetics of KSb₅S₈, it was found that the crystallization rate and assoicated activation energies were comparable or superior to those of Ge₂Sb₂Te₅ but having the additional advantage of possessing a much higher optimal bandgap suggesting possible utility in high density optical data storage applications using short wavelength laser beams.

Original language	English
Pages (from-to)	1428-1431
Number of pages	4
Journal	Advanced Materials
Volume	15
Issue number	17
DOIs	https://doi.org/10.1002/adma.200304994
Publication status	Published - Sep 3 2003

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.200304994

Fingerprint Dive into the research topics of 'KSb<sub>5</sub>S<sub>8</sub>: A wide bandgap phase-change material for ultra high density rewritable information storage'. Together they form a unique fingerprint.

Cite this

@article{1dc77bdf24cc48a191af83c28512b1a7,

title = "KSb5S8: A wide bandgap phase-change material for ultra high density rewritable information storage",

abstract = "The reversible glassformation and glass crystallization properties of KSb3S8 was described. On the basis of glass transition and crystallization kinetics of KSb5S8, it was found that the crystallization rate and assoicated activation energies were comparable or superior to those of Ge2Sb2Te5 but having the additional advantage of possessing a much higher optimal bandgap suggesting possible utility in high density optical data storage applications using short wavelength laser beams.",

author = "Theodora Kyratsi and Konstantinos Chrissafis and Joseph Wachter and Paraskevopoulos, {Konstantinos M.} and Kanatzidis, {Mercouri G.}",

year = "2003",

month = sep,

day = "3",

doi = "10.1002/adma.200304994",

language = "English",

volume = "15",

pages = "1428--1431",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "17",

}

TY - JOUR

T1 - KSb5S8

T2 - A wide bandgap phase-change material for ultra high density rewritable information storage

AU - Kyratsi, Theodora

AU - Chrissafis, Konstantinos

AU - Wachter, Joseph

AU - Paraskevopoulos, Konstantinos M.

AU - Kanatzidis, Mercouri G.

PY - 2003/9/3

Y1 - 2003/9/3

N2 - The reversible glassformation and glass crystallization properties of KSb3S8 was described. On the basis of glass transition and crystallization kinetics of KSb5S8, it was found that the crystallization rate and assoicated activation energies were comparable or superior to those of Ge2Sb2Te5 but having the additional advantage of possessing a much higher optimal bandgap suggesting possible utility in high density optical data storage applications using short wavelength laser beams.

AB - The reversible glassformation and glass crystallization properties of KSb3S8 was described. On the basis of glass transition and crystallization kinetics of KSb5S8, it was found that the crystallization rate and assoicated activation energies were comparable or superior to those of Ge2Sb2Te5 but having the additional advantage of possessing a much higher optimal bandgap suggesting possible utility in high density optical data storage applications using short wavelength laser beams.

UR - http://www.scopus.com/inward/record.url?scp=0141853155&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141853155&partnerID=8YFLogxK

U2 - 10.1002/adma.200304994

DO - 10.1002/adma.200304994

M3 - Article

AN - SCOPUS:0141853155

VL - 15

SP - 1428

EP - 1431

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 17