KSb5S8: A wide bandgap phase-change material for ultra high density rewritable information storage

Theodora Kyratsi, Konstantinos Chrissafis, Joseph Wachter, Konstantinos M. Paraskevopoulos, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

The reversible glassformation and glass crystallization properties of KSb3S8 was described. On the basis of glass transition and crystallization kinetics of KSb5S8, it was found that the crystallization rate and assoicated activation energies were comparable or superior to those of Ge2Sb2Te5 but having the additional advantage of possessing a much higher optimal bandgap suggesting possible utility in high density optical data storage applications using short wavelength laser beams.

Original languageEnglish
Pages (from-to)1428-1431
Number of pages4
JournalAdvanced Materials
Volume15
Issue number17
DOIs
Publication statusPublished - Sep 3 2003

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Phase change materials
Crystallization
Energy gap
Data storage equipment
Optical data storage
Crystallization kinetics
Laser beams
Glass transition
Activation energy
Glass
Wavelength

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

KSb5S8 : A wide bandgap phase-change material for ultra high density rewritable information storage. / Kyratsi, Theodora; Chrissafis, Konstantinos; Wachter, Joseph; Paraskevopoulos, Konstantinos M.; Kanatzidis, Mercouri G.

In: Advanced Materials, Vol. 15, No. 17, 03.09.2003, p. 1428-1431.

Research output: Contribution to journalArticle

Kyratsi, Theodora ; Chrissafis, Konstantinos ; Wachter, Joseph ; Paraskevopoulos, Konstantinos M. ; Kanatzidis, Mercouri G. / KSb5S8 : A wide bandgap phase-change material for ultra high density rewritable information storage. In: Advanced Materials. 2003 ; Vol. 15, No. 17. pp. 1428-1431.
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