Abstract
The reversible glassformation and glass crystallization properties of KSb3S8 was described. On the basis of glass transition and crystallization kinetics of KSb5S8, it was found that the crystallization rate and assoicated activation energies were comparable or superior to those of Ge2Sb2Te5 but having the additional advantage of possessing a much higher optimal bandgap suggesting possible utility in high density optical data storage applications using short wavelength laser beams.
| Original language | English |
|---|---|
| Pages (from-to) | 1428-1431 |
| Number of pages | 4 |
| Journal | Advanced Materials |
| Volume | 15 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - Sep 3 2003 |
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ASJC Scopus subject areas
- Materials Science(all)
Cite this
KSb5S8 : A wide bandgap phase-change material for ultra high density rewritable information storage. / Kyratsi, Theodora; Chrissafis, Konstantinos; Wachter, Joseph; Paraskevopoulos, Konstantinos M.; Kanatzidis, Mercouri G.
In: Advanced Materials, Vol. 15, No. 17, 03.09.2003, p. 1428-1431.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - KSb5S8
T2 - A wide bandgap phase-change material for ultra high density rewritable information storage
AU - Kyratsi, Theodora
AU - Chrissafis, Konstantinos
AU - Wachter, Joseph
AU - Paraskevopoulos, Konstantinos M.
AU - Kanatzidis, Mercouri G
PY - 2003/9/3
Y1 - 2003/9/3
N2 - The reversible glassformation and glass crystallization properties of KSb3S8 was described. On the basis of glass transition and crystallization kinetics of KSb5S8, it was found that the crystallization rate and assoicated activation energies were comparable or superior to those of Ge2Sb2Te5 but having the additional advantage of possessing a much higher optimal bandgap suggesting possible utility in high density optical data storage applications using short wavelength laser beams.
AB - The reversible glassformation and glass crystallization properties of KSb3S8 was described. On the basis of glass transition and crystallization kinetics of KSb5S8, it was found that the crystallization rate and assoicated activation energies were comparable or superior to those of Ge2Sb2Te5 but having the additional advantage of possessing a much higher optimal bandgap suggesting possible utility in high density optical data storage applications using short wavelength laser beams.
UR - http://www.scopus.com/inward/record.url?scp=0141853155&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0141853155&partnerID=8YFLogxK
U2 - 10.1002/adma.200304994
DO - 10.1002/adma.200304994
M3 - Article
VL - 15
SP - 1428
EP - 1431
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 17
ER -