KSb5S8: A wide bandgap phase-change material for ultra high density rewritable information storage

Theodora Kyratsi; Konstantinos Chrissafis; Joseph Wachter; Konstantinos M. Paraskevopoulos; Mercouri G. Kanatzidis

doi:10.1002/adma.200304994

KSb₅S₈: A wide bandgap phase-change material for ultra high density rewritable information storage

Theodora Kyratsi, Konstantinos Chrissafis, Joseph Wachter, Konstantinos M. Paraskevopoulos, Mercouri G. Kanatzidis

Northwestern University

Research output: Contribution to journal › Article

49 Citations (Scopus)

Abstract

The reversible glassformation and glass crystallization properties of KSb₃S₈ was described. On the basis of glass transition and crystallization kinetics of KSb₅S₈, it was found that the crystallization rate and assoicated activation energies were comparable or superior to those of Ge₂Sb₂Te₅ but having the additional advantage of possessing a much higher optimal bandgap suggesting possible utility in high density optical data storage applications using short wavelength laser beams.

Original language	English
Pages (from-to)	1428-1431
Number of pages	4
Journal	Advanced Materials
Volume	15
Issue number	17
DOIs	https://doi.org/10.1002/adma.200304994
Publication status	Published - Sep 3 2003

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ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Cite this

Kyratsi, T., Chrissafis, K., Wachter, J., Paraskevopoulos, K. M., & Kanatzidis, M. G. (2003). KSb₅S₈: A wide bandgap phase-change material for ultra high density rewritable information storage. Advanced Materials, 15(17), 1428-1431. https://doi.org/10.1002/adma.200304994

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10.1002/adma.200304994