Abstract
A silicate reaction between lanthana and silica layers has been utilized to eliminate interfacial silica in metal-insulator-semiconductor devices and to obtain devices with very low equivalent oxide thickness (EOT). This provides a simple process route to interface elimination, while producing a silicate dielectric with a higher temperature stability of the amorphous phase. The La2 O3 layers in this study are deposited by reactive evaporation on (001) Si covered by a ∼0.8-1.0-nm -thick SiO2 chemical oxide, and are capped in situ with a Ta gate, followed by a reaction anneal, which lowers the EOT from greater than 1.5 nm for the as-deposited bilayer stack to as low as 0.5 nm. Electron energy-loss spectroscopy and medium-energy ion scattering are used to show that a temperature of 400°C is sufficient for the formation of the silicate gate dielectric. Gate leakage currents as low as 0.06 A cm2 are obtained for stacks having an EOT of 0.63 nm, orders of magnitude below that of SiO2 having the same EOT value. Electrical breakdown is observed at applied fields above 16 MVcm.
| Original language | English |
|---|---|
| Article number | 024314 |
| Journal | Journal of Applied Physics |
| Volume | 98 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Jul 15 2005 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
Cite this
Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction. / Lichtenwalner, Daniel J.; Jur, Jesse S.; Kingon, Angus I.; Agustin, Melody P.; Yang, Yan; Stemmer, Susanne; Goncharova, Lyudmila V.; Gustafsson, Torgny; Garfunkel, Eric.
In: Journal of Applied Physics, Vol. 98, No. 2, 024314, 15.07.2005.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction
AU - Lichtenwalner, Daniel J.
AU - Jur, Jesse S.
AU - Kingon, Angus I.
AU - Agustin, Melody P.
AU - Yang, Yan
AU - Stemmer, Susanne
AU - Goncharova, Lyudmila V.
AU - Gustafsson, Torgny
AU - Garfunkel, Eric
PY - 2005/7/15
Y1 - 2005/7/15
N2 - A silicate reaction between lanthana and silica layers has been utilized to eliminate interfacial silica in metal-insulator-semiconductor devices and to obtain devices with very low equivalent oxide thickness (EOT). This provides a simple process route to interface elimination, while producing a silicate dielectric with a higher temperature stability of the amorphous phase. The La2 O3 layers in this study are deposited by reactive evaporation on (001) Si covered by a ∼0.8-1.0-nm -thick SiO2 chemical oxide, and are capped in situ with a Ta gate, followed by a reaction anneal, which lowers the EOT from greater than 1.5 nm for the as-deposited bilayer stack to as low as 0.5 nm. Electron energy-loss spectroscopy and medium-energy ion scattering are used to show that a temperature of 400°C is sufficient for the formation of the silicate gate dielectric. Gate leakage currents as low as 0.06 A cm2 are obtained for stacks having an EOT of 0.63 nm, orders of magnitude below that of SiO2 having the same EOT value. Electrical breakdown is observed at applied fields above 16 MVcm.
AB - A silicate reaction between lanthana and silica layers has been utilized to eliminate interfacial silica in metal-insulator-semiconductor devices and to obtain devices with very low equivalent oxide thickness (EOT). This provides a simple process route to interface elimination, while producing a silicate dielectric with a higher temperature stability of the amorphous phase. The La2 O3 layers in this study are deposited by reactive evaporation on (001) Si covered by a ∼0.8-1.0-nm -thick SiO2 chemical oxide, and are capped in situ with a Ta gate, followed by a reaction anneal, which lowers the EOT from greater than 1.5 nm for the as-deposited bilayer stack to as low as 0.5 nm. Electron energy-loss spectroscopy and medium-energy ion scattering are used to show that a temperature of 400°C is sufficient for the formation of the silicate gate dielectric. Gate leakage currents as low as 0.06 A cm2 are obtained for stacks having an EOT of 0.63 nm, orders of magnitude below that of SiO2 having the same EOT value. Electrical breakdown is observed at applied fields above 16 MVcm.
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U2 - 10.1063/1.1988967
DO - 10.1063/1.1988967
M3 - Article
AN - SCOPUS:23844503318
VL - 98
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 2
M1 - 024314
ER -