Large-area, low-voltage, antiambipolar heterojunctions from solution-processed semiconductors

Deep Jariwala, Vinod K. Sangwan, Jung Woo Ted Seo, Weichao Xu, Jeremy Smith, Chris H. Kim, Lincoln J. Lauhon, Tobin J Marks, Mark C Hersam

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials present processing challenges that have prevented these heterostructures from being produced with sufficient scalability and/or homogeneity to enable their incorporation into large-area integrated circuits. Here, we extend the concept of van der Waals heterojunctions to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type amorphous indium gallium zinc oxide (a-IGZO) thin films that can be solution-processed or sputtered with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions exhibit antiambipolar transfer characteristics with high on/off ratios that are well-suited for electronic, optoelectronic, and telecommunication technologies.

Original languageEnglish
Pages (from-to)416-421
Number of pages6
JournalNano Letters
Volume15
Issue number1
DOIs
Publication statusPublished - Jan 14 2015

Fingerprint

low voltage
Heterojunctions
heterojunctions
Semiconductor materials
gallium oxides
Electric potential
electronics
zinc oxides
homogeneity
integrated circuits
indium
telecommunication
carbon nanotubes
wafers
Zinc Oxide
thin films
Gallium
Indium
Dangling bonds
Single-walled carbon nanotubes (SWCN)

Keywords

  • carbon nanotube
  • frequency doubler
  • indium gallium zinc oxide
  • p-n heterojunction
  • phase shift keying
  • van der Waals heterostructure

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Large-area, low-voltage, antiambipolar heterojunctions from solution-processed semiconductors. / Jariwala, Deep; Sangwan, Vinod K.; Seo, Jung Woo Ted; Xu, Weichao; Smith, Jeremy; Kim, Chris H.; Lauhon, Lincoln J.; Marks, Tobin J; Hersam, Mark C.

In: Nano Letters, Vol. 15, No. 1, 14.01.2015, p. 416-421.

Research output: Contribution to journalArticle

Jariwala, D, Sangwan, VK, Seo, JWT, Xu, W, Smith, J, Kim, CH, Lauhon, LJ, Marks, TJ & Hersam, MC 2015, 'Large-area, low-voltage, antiambipolar heterojunctions from solution-processed semiconductors', Nano Letters, vol. 15, no. 1, pp. 416-421. https://doi.org/10.1021/nl5037484
Jariwala D, Sangwan VK, Seo JWT, Xu W, Smith J, Kim CH et al. Large-area, low-voltage, antiambipolar heterojunctions from solution-processed semiconductors. Nano Letters. 2015 Jan 14;15(1):416-421. https://doi.org/10.1021/nl5037484
Jariwala, Deep ; Sangwan, Vinod K. ; Seo, Jung Woo Ted ; Xu, Weichao ; Smith, Jeremy ; Kim, Chris H. ; Lauhon, Lincoln J. ; Marks, Tobin J ; Hersam, Mark C. / Large-area, low-voltage, antiambipolar heterojunctions from solution-processed semiconductors. In: Nano Letters. 2015 ; Vol. 15, No. 1. pp. 416-421.
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