Abstract
The integration of novel materials such as single-walled carbon nanotubes and nanowires into devices has been challenging, but developments in transfer printing and solution-based methods now allow these materials to be incorporated into large-area electronics. Similar efforts are now being devoted to making the integration of graphene into devices technologically feasible. Here, we report a solution-based method that allows uniform and controllable deposition of reduced graphene oxide thin films with thicknesses ranging from a single monolayer to several layers over large areas. The opto-electronic properties can thus be tuned over several orders of magnitude, making them potentially useful for flexible and transparent semiconductors or semi-metals. The thinnest films exhibit graphene-like ambipolar transistor characteristics, whereas thicker films behave as graphite-like semi-metals. Collectively, our deposition method could represent a route for translating the interesting fundamental properties of graphene into technologically viable devices.
| Original language | English |
|---|---|
| Pages (from-to) | 270-274 |
| Number of pages | 5 |
| Journal | Nature Nanotechnology |
| Volume | 3 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - May 2008 |
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ASJC Scopus subject areas
- Bioengineering
- Biomedical Engineering
- Materials Science(all)
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
Cite this
Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material. / Eda, Goki; Fanchini, Giovanni; Chhowalla, Manish.
In: Nature Nanotechnology, Vol. 3, No. 5, 05.2008, p. 270-274.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material
AU - Eda, Goki
AU - Fanchini, Giovanni
AU - Chhowalla, Manish
PY - 2008/5
Y1 - 2008/5
N2 - The integration of novel materials such as single-walled carbon nanotubes and nanowires into devices has been challenging, but developments in transfer printing and solution-based methods now allow these materials to be incorporated into large-area electronics. Similar efforts are now being devoted to making the integration of graphene into devices technologically feasible. Here, we report a solution-based method that allows uniform and controllable deposition of reduced graphene oxide thin films with thicknesses ranging from a single monolayer to several layers over large areas. The opto-electronic properties can thus be tuned over several orders of magnitude, making them potentially useful for flexible and transparent semiconductors or semi-metals. The thinnest films exhibit graphene-like ambipolar transistor characteristics, whereas thicker films behave as graphite-like semi-metals. Collectively, our deposition method could represent a route for translating the interesting fundamental properties of graphene into technologically viable devices.
AB - The integration of novel materials such as single-walled carbon nanotubes and nanowires into devices has been challenging, but developments in transfer printing and solution-based methods now allow these materials to be incorporated into large-area electronics. Similar efforts are now being devoted to making the integration of graphene into devices technologically feasible. Here, we report a solution-based method that allows uniform and controllable deposition of reduced graphene oxide thin films with thicknesses ranging from a single monolayer to several layers over large areas. The opto-electronic properties can thus be tuned over several orders of magnitude, making them potentially useful for flexible and transparent semiconductors or semi-metals. The thinnest films exhibit graphene-like ambipolar transistor characteristics, whereas thicker films behave as graphite-like semi-metals. Collectively, our deposition method could represent a route for translating the interesting fundamental properties of graphene into technologically viable devices.
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U2 - 10.1038/nnano.2008.83
DO - 10.1038/nnano.2008.83
M3 - Article
C2 - 18654522
AN - SCOPUS:43449107662
VL - 3
SP - 270
EP - 274
JO - Nature Nanotechnology
JF - Nature Nanotechnology
SN - 1748-3387
IS - 5
ER -