Large magnetoresistance in post-annealed polycrystalline and epitaxial Bi thin films

Sunglae Cho, Yunki Kim, L. J. Olafsen, I. Vurgaftman, A. J. Freeman, G. K.L. Wong, J. R. Meyer, C. A. Hoffman, J. B. Ketterson

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16 Citations (Scopus)

Abstract

The magnetoresistance (MR) in post-annealed polycrystalline and epitaxial Bi thin films was discussed. The ring reflection high-energy electron diffraction (RHEED) patterns were shown by the films on Si(100). The results showed an increase in the MR by a factor of 2560 at 5K as compared with 343 for an as-grown epitaxial film was observed due to enhanced carrier mobilities.

Original languageEnglish
Pages (from-to)201-203
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume239
Issue number1-3
DOIs
Publication statusPublished - Feb 1 2002

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Keywords

  • Bismuth
  • Magnetoresistance
  • Thin films
  • Transport

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Cho, S., Kim, Y., Olafsen, L. J., Vurgaftman, I., Freeman, A. J., Wong, G. K. L., Meyer, J. R., Hoffman, C. A., & Ketterson, J. B. (2002). Large magnetoresistance in post-annealed polycrystalline and epitaxial Bi thin films. Journal of Magnetism and Magnetic Materials, 239(1-3), 201-203. https://doi.org/10.1016/S0304-8853(01)00557-1