Large magnetoresistance in postannealed Bi thin films

Sunglae Cho, Yunki Kim, A. J. Freeman, G. K.L. Wong, J. B. Ketterson, L. J. Olafsen, I. Vurgaftman, J. R. Meyer, C. A. Hoffman

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)


We have observed a large increase in the magnetoresistance (MR) of molecular beam epitaxy grown Bi thin films, which were subjected to a postannealing procedure 3°C below the Bi melting point. We have achieved an increase in the MR by a factor of 2560 at helium temperatures compared with of 343 for an as-grown film. The enhancement of the MR in the annealed films is due to higher electron and hole mobilities (μe ≈ 1 X 106 cm2/V s at 5 K) relative to those of the as-grown films (μe ≈ 9 X 104 cm2/V s at 5 K). The enhancement of the mobility in the annealed films is also supported by the observation of Shubnikov-de Haas oscillations.

Original languageEnglish
Pages (from-to)3651-3653
Number of pages3
JournalApplied Physics Letters
Issue number22
Publication statusPublished - Nov 26 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Large magnetoresistance in postannealed Bi thin films'. Together they form a unique fingerprint.

Cite this