Large magnetoresistance in postannealed Bi thin films

Sunglae Cho, Yunki Kim, Arthur J Freeman, G. K L Wong, J. B. Ketterson, L. J. Olafsen, I. Vurgaftman, J. R. Meyer, C. A. Hoffman

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55 Citations (Scopus)

Abstract

We have observed a large increase in the magnetoresistance (MR) of molecular beam epitaxy grown Bi thin films, which were subjected to a postannealing procedure 3°C below the Bi melting point. We have achieved an increase in the MR by a factor of 2560 at helium temperatures compared with of 343 for an as-grown film. The enhancement of the MR in the annealed films is due to higher electron and hole mobilities (μe ≈ 1 X 106 cm2/V s at 5 K) relative to those of the as-grown films (μe ≈ 9 X 104 cm2/V s at 5 K). The enhancement of the mobility in the annealed films is also supported by the observation of Shubnikov-de Haas oscillations.

Original languageEnglish
Pages (from-to)3651-3653
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number22
DOIs
Publication statusPublished - Nov 26 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Cho, S., Kim, Y., Freeman, A. J., Wong, G. K. L., Ketterson, J. B., Olafsen, L. J., Vurgaftman, I., Meyer, J. R., & Hoffman, C. A. (2001). Large magnetoresistance in postannealed Bi thin films. Applied Physics Letters, 79(22), 3651-3653. https://doi.org/10.1063/1.1416157