Large magnetoresistance in postannealed Bi thin films

Sunglae Cho, Yunki Kim, Arthur J Freeman, G. K L Wong, J. B. Ketterson, L. J. Olafsen, I. Vurgaftman, J. R. Meyer, C. A. Hoffman

Research output: Contribution to journalArticle

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Abstract

We have observed a large increase in the magnetoresistance (MR) of molecular beam epitaxy grown Bi thin films, which were subjected to a postannealing procedure 3°C below the Bi melting point. We have achieved an increase in the MR by a factor of 2560 at helium temperatures compared with of 343 for an as-grown film. The enhancement of the MR in the annealed films is due to higher electron and hole mobilities (μe ≈ 1 X 106 cm2/V s at 5 K) relative to those of the as-grown films (μe ≈ 9 X 104 cm2/V s at 5 K). The enhancement of the mobility in the annealed films is also supported by the observation of Shubnikov-de Haas oscillations.

Original languageEnglish
Pages (from-to)3651-3653
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number22
DOIs
Publication statusPublished - Nov 26 2001

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thin films
augmentation
hole mobility
electron mobility
melting points
molecular beam epitaxy
helium
oscillations
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Cho, S., Kim, Y., Freeman, A. J., Wong, G. K. L., Ketterson, J. B., Olafsen, L. J., ... Hoffman, C. A. (2001). Large magnetoresistance in postannealed Bi thin films. Applied Physics Letters, 79(22), 3651-3653. https://doi.org/10.1063/1.1416157

Large magnetoresistance in postannealed Bi thin films. / Cho, Sunglae; Kim, Yunki; Freeman, Arthur J; Wong, G. K L; Ketterson, J. B.; Olafsen, L. J.; Vurgaftman, I.; Meyer, J. R.; Hoffman, C. A.

In: Applied Physics Letters, Vol. 79, No. 22, 26.11.2001, p. 3651-3653.

Research output: Contribution to journalArticle

Cho, S, Kim, Y, Freeman, AJ, Wong, GKL, Ketterson, JB, Olafsen, LJ, Vurgaftman, I, Meyer, JR & Hoffman, CA 2001, 'Large magnetoresistance in postannealed Bi thin films', Applied Physics Letters, vol. 79, no. 22, pp. 3651-3653. https://doi.org/10.1063/1.1416157
Cho S, Kim Y, Freeman AJ, Wong GKL, Ketterson JB, Olafsen LJ et al. Large magnetoresistance in postannealed Bi thin films. Applied Physics Letters. 2001 Nov 26;79(22):3651-3653. https://doi.org/10.1063/1.1416157
Cho, Sunglae ; Kim, Yunki ; Freeman, Arthur J ; Wong, G. K L ; Ketterson, J. B. ; Olafsen, L. J. ; Vurgaftman, I. ; Meyer, J. R. ; Hoffman, C. A. / Large magnetoresistance in postannealed Bi thin films. In: Applied Physics Letters. 2001 ; Vol. 79, No. 22. pp. 3651-3653.
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