Large-scale, nonsubtractive patterning of transparent conducting oxides by ion bombardment

Norma E. Sosa, Christopher Chen, Jun Liu, Tobin J Marks, Mark C Hersam

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

While significant progress has been achieved in the fabrication and performance of transparent electronic devices, substantially less research effort has been devoted to transparent interconnects, despite their critical importance for transparent integrated circuitry. Here, we exploit the crystal disorder induced by Ar+ ion bombardment to achieve efficient fabrication of electrically conductive patterns on indium oxide surfaces. The resulting ion-induced patterns are characterized by conductive atomic force microscopy, secondary ion mass spectrometry, and four-point charge transport measurements. Massively parallel patterning is demonstrated over square centimeter areas with a patterned electrical conductivity of ∼104 S cm-1.

Original languageEnglish
Article number022110
JournalApplied Physics Letters
Volume99
Issue number2
DOIs
Publication statusPublished - Jul 11 2011

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bombardment
conduction
fabrication
oxides
indium oxides
secondary ion mass spectrometry
ions
atomic force microscopy
disorders
electrical resistivity
electronics
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Large-scale, nonsubtractive patterning of transparent conducting oxides by ion bombardment. / Sosa, Norma E.; Chen, Christopher; Liu, Jun; Marks, Tobin J; Hersam, Mark C.

In: Applied Physics Letters, Vol. 99, No. 2, 022110, 11.07.2011.

Research output: Contribution to journalArticle

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