Laser assisted field induced oxide nanopatterning of hydrogen passivated silicon surfaces

L. S C Pingree, M. J. Schmitz, D. E. Kramer, Mark C Hersam

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Field induced oxide (FIO) nanopatterning of hydrogen passivated silicon surfaces with an atomic force microscope (AFM) has been controlled by laser irradiation. Specifically, local oxidation on H:Si(111) surfaces can be fully suppressed or activated by toggling a laser that is illuminating a lightly doped silicon AFM cantilever. The nanopatterning mechanism is attributed to the control of the free carrier concentration in the AFM probe by the laser. When the laser is toggled off, charge injection is terminated, thus eliminating the electrochemical reactions required for oxide formation. Laser assisted FIO provides an alternative and flexible means for controlling oxide nanopatterning.

Original languageEnglish
Article number073110
JournalApplied Physics Letters
Volume91
Issue number7
DOIs
Publication statusPublished - 2007

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oxides
silicon
hydrogen
lasers
microscopes
illuminating
injection
oxidation
irradiation
probes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Laser assisted field induced oxide nanopatterning of hydrogen passivated silicon surfaces. / Pingree, L. S C; Schmitz, M. J.; Kramer, D. E.; Hersam, Mark C.

In: Applied Physics Letters, Vol. 91, No. 7, 073110, 2007.

Research output: Contribution to journalArticle

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