Lasing characteristics of GaSbGaAs self-assembled quantum dots embedded in an InGaAs quantum well

J. Tatebayashi; A. Khoshakhlagh; S. H. Huang; G. Balakrishnan; L. R. Dawson; D. L. Huffaker; D. A. Bussian; H. Htoon; V. Klimov

doi:10.1063/1.2752018

Lasing characteristics of GaSbGaAs self-assembled quantum dots embedded in an InGaAs quantum well

J. Tatebayashi, A. Khoshakhlagh, S. H. Huang, G. Balakrishnan, L. R. Dawson, D. L. Huffaker, D. A. Bussian, H. Htoon, V. Klimov

Los Alamos National Laboratory

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Abstract

The authors report the optical characteristics of GaSbGaAs self-assembled quantum dots (QDs) embedded in an InGaAs quantum well (QW). Variations in the In composition of the QW can significantly alter the emission wavelength up to 1.3 μm and emission efficiency. Lasing operation at room temperature is obtained from a 2-mm -long device containing five stacked GaSb QDs in In0.13 Ga0.87 As QWs at 1.026 μm with a threshold current density of 860 A cm2. The probable lasing transition involves electrons and holes confined in the QW and QDs, respectively, resulting in a large peak modal gain of 45 cm-1. A significant blueshift of the electroluminescence peak is observed with increased injection current and suggests a type-II band structure.

Original language	English
Article number	261115
Journal	Applied Physics Letters
Volume	90
Issue number	26
DOIs	https://doi.org/10.1063/1.2752018
Publication status	Published - Aug 2 2007

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Tatebayashi, J., Khoshakhlagh, A., Huang, S. H., Balakrishnan, G., Dawson, L. R., Huffaker, D. L., Bussian, D. A., Htoon, H., & Klimov, V. (2007). Lasing characteristics of GaSbGaAs self-assembled quantum dots embedded in an InGaAs quantum well. Applied Physics Letters, 90(26), [261115]. https://doi.org/10.1063/1.2752018

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AU - Khoshakhlagh, A.

AU - Huang, S. H.

AU - Balakrishnan, G.

AU - Dawson, L. R.

AU - Huffaker, D. L.

AU - Bussian, D. A.

AU - Htoon, H.

AU - Klimov, V.

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AB - The authors report the optical characteristics of GaSbGaAs self-assembled quantum dots (QDs) embedded in an InGaAs quantum well (QW). Variations in the In composition of the QW can significantly alter the emission wavelength up to 1.3 μm and emission efficiency. Lasing operation at room temperature is obtained from a 2-mm -long device containing five stacked GaSb QDs in In0.13 Ga0.87 As QWs at 1.026 μm with a threshold current density of 860 A cm2. The probable lasing transition involves electrons and holes confined in the QW and QDs, respectively, resulting in a large peak modal gain of 45 cm-1. A significant blueshift of the electroluminescence peak is observed with increased injection current and suggests a type-II band structure.

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10.1063/1.2752018