Lasing characteristics of GaSbGaAs self-assembled quantum dots embedded in an InGaAs quantum well

J. Tatebayashi, A. Khoshakhlagh, S. H. Huang, G. Balakrishnan, L. R. Dawson, D. L. Huffaker, D. A. Bussian, H. Htoon, V. Klimov

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Abstract

The authors report the optical characteristics of GaSbGaAs self-assembled quantum dots (QDs) embedded in an InGaAs quantum well (QW). Variations in the In composition of the QW can significantly alter the emission wavelength up to 1.3 μm and emission efficiency. Lasing operation at room temperature is obtained from a 2-mm -long device containing five stacked GaSb QDs in In0.13 Ga0.87 As QWs at 1.026 μm with a threshold current density of 860 A cm2. The probable lasing transition involves electrons and holes confined in the QW and QDs, respectively, resulting in a large peak modal gain of 45 cm-1. A significant blueshift of the electroluminescence peak is observed with increased injection current and suggests a type-II band structure.

Original languageEnglish
Article number261115
JournalApplied Physics Letters
Volume90
Issue number26
DOIs
Publication statusPublished - Aug 2 2007

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Tatebayashi, J., Khoshakhlagh, A., Huang, S. H., Balakrishnan, G., Dawson, L. R., Huffaker, D. L., Bussian, D. A., Htoon, H., & Klimov, V. (2007). Lasing characteristics of GaSbGaAs self-assembled quantum dots embedded in an InGaAs quantum well. Applied Physics Letters, 90(26), [261115]. https://doi.org/10.1063/1.2752018