Abstract
The authors report the optical characteristics of GaSbGaAs self-assembled quantum dots (QDs) embedded in an InGaAs quantum well (QW). Variations in the In composition of the QW can significantly alter the emission wavelength up to 1.3 μm and emission efficiency. Lasing operation at room temperature is obtained from a 2-mm -long device containing five stacked GaSb QDs in In0.13 Ga0.87 As QWs at 1.026 μm with a threshold current density of 860 A cm2. The probable lasing transition involves electrons and holes confined in the QW and QDs, respectively, resulting in a large peak modal gain of 45 cm-1. A significant blueshift of the electroluminescence peak is observed with increased injection current and suggests a type-II band structure.
| Original language | English |
|---|---|
| Article number | 261115 |
| Journal | Applied Physics Letters |
| Volume | 90 |
| Issue number | 26 |
| DOIs | |
| Publication status | Published - 2007 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Lasing characteristics of GaSbGaAs self-assembled quantum dots embedded in an InGaAs quantum well. / Tatebayashi, J.; Khoshakhlagh, A.; Huang, S. H.; Balakrishnan, G.; Dawson, L. R.; Huffaker, D. L.; Bussian, D. A.; Htoon, H.; Klimov, Victor I.
In: Applied Physics Letters, Vol. 90, No. 26, 261115, 2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Lasing characteristics of GaSbGaAs self-assembled quantum dots embedded in an InGaAs quantum well
AU - Tatebayashi, J.
AU - Khoshakhlagh, A.
AU - Huang, S. H.
AU - Balakrishnan, G.
AU - Dawson, L. R.
AU - Huffaker, D. L.
AU - Bussian, D. A.
AU - Htoon, H.
AU - Klimov, Victor I
PY - 2007
Y1 - 2007
N2 - The authors report the optical characteristics of GaSbGaAs self-assembled quantum dots (QDs) embedded in an InGaAs quantum well (QW). Variations in the In composition of the QW can significantly alter the emission wavelength up to 1.3 μm and emission efficiency. Lasing operation at room temperature is obtained from a 2-mm -long device containing five stacked GaSb QDs in In0.13 Ga0.87 As QWs at 1.026 μm with a threshold current density of 860 A cm2. The probable lasing transition involves electrons and holes confined in the QW and QDs, respectively, resulting in a large peak modal gain of 45 cm-1. A significant blueshift of the electroluminescence peak is observed with increased injection current and suggests a type-II band structure.
AB - The authors report the optical characteristics of GaSbGaAs self-assembled quantum dots (QDs) embedded in an InGaAs quantum well (QW). Variations in the In composition of the QW can significantly alter the emission wavelength up to 1.3 μm and emission efficiency. Lasing operation at room temperature is obtained from a 2-mm -long device containing five stacked GaSb QDs in In0.13 Ga0.87 As QWs at 1.026 μm with a threshold current density of 860 A cm2. The probable lasing transition involves electrons and holes confined in the QW and QDs, respectively, resulting in a large peak modal gain of 45 cm-1. A significant blueshift of the electroluminescence peak is observed with increased injection current and suggests a type-II band structure.
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U2 - 10.1063/1.2752018
DO - 10.1063/1.2752018
M3 - Article
VL - 90
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 26
M1 - 261115
ER -