La1-xBi1+xS3 (x ≈ 0.08): An n-Type Semiconductor

Fei Han, Huimei Liu, Christos D. Malliakas, Mihai Sturza, Duck Young Chung, Xiangang Wan, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The new bismuth chalcogenide La0.92Bi1.08S3 crystallizes in the monoclinic space group C2/m with a = 28.0447(19) Å, b = 4.0722(2) Å, c = 14.7350(9) Å, and β = 118.493(5)°. The structure of La0.92Bi1.08S3 is built of NaCl-type Bi2S5 blocks and BiS4 and LaS5 infinitely long chains, forming a compact three-dimensional framework with parallel tunnels. Optical spectroscopy and resistivity measurements reveal a semiconducting behavior with a band gap of ∼1 eV and activation energy for transport of 0.36(1) eV. Thermopower measurements suggest the majority carriers of La0.92Bi1.08S3 are electrons. Heat capacity measurements indicate no phase transitions from 2 to 300 K. Band structure calculations at the density functional theory level confirm the semiconducting nature and the indirect gap of La0.92Bi1.08S3.

Original languageEnglish
Pages (from-to)3547-3552
Number of pages6
JournalInorganic Chemistry
Volume55
Issue number7
DOIs
Publication statusPublished - Apr 18 2016

Fingerprint

n-type semiconductors
Semiconductor materials
Bismuth
majority carriers
Thermoelectric power
extremely high frequencies
Band structure
bismuth
Specific heat
Density functional theory
tunnels
Tunnels
Energy gap
Activation energy
Phase transitions
specific heat
activation energy
density functional theory
electrical resistivity
Electrons

ASJC Scopus subject areas

  • Inorganic Chemistry
  • Physical and Theoretical Chemistry

Cite this

Han, F., Liu, H., Malliakas, C. D., Sturza, M., Chung, D. Y., Wan, X., & Kanatzidis, M. G. (2016). La1-xBi1+xS3 (x ≈ 0.08): An n-Type Semiconductor. Inorganic Chemistry, 55(7), 3547-3552. https://doi.org/10.1021/acs.inorgchem.6b00025

La1-xBi1+xS3 (x ≈ 0.08) : An n-Type Semiconductor. / Han, Fei; Liu, Huimei; Malliakas, Christos D.; Sturza, Mihai; Chung, Duck Young; Wan, Xiangang; Kanatzidis, Mercouri G.

In: Inorganic Chemistry, Vol. 55, No. 7, 18.04.2016, p. 3547-3552.

Research output: Contribution to journalArticle

Han, F, Liu, H, Malliakas, CD, Sturza, M, Chung, DY, Wan, X & Kanatzidis, MG 2016, 'La1-xBi1+xS3 (x ≈ 0.08): An n-Type Semiconductor', Inorganic Chemistry, vol. 55, no. 7, pp. 3547-3552. https://doi.org/10.1021/acs.inorgchem.6b00025
Han F, Liu H, Malliakas CD, Sturza M, Chung DY, Wan X et al. La1-xBi1+xS3 (x ≈ 0.08): An n-Type Semiconductor. Inorganic Chemistry. 2016 Apr 18;55(7):3547-3552. https://doi.org/10.1021/acs.inorgchem.6b00025
Han, Fei ; Liu, Huimei ; Malliakas, Christos D. ; Sturza, Mihai ; Chung, Duck Young ; Wan, Xiangang ; Kanatzidis, Mercouri G. / La1-xBi1+xS3 (x ≈ 0.08) : An n-Type Semiconductor. In: Inorganic Chemistry. 2016 ; Vol. 55, No. 7. pp. 3547-3552.
@article{0ecd62abb3f04fbb96f53e4177223503,
title = "La1-xBi1+xS3 (x ≈ 0.08): An n-Type Semiconductor",
abstract = "The new bismuth chalcogenide La0.92Bi1.08S3 crystallizes in the monoclinic space group C2/m with a = 28.0447(19) {\AA}, b = 4.0722(2) {\AA}, c = 14.7350(9) {\AA}, and β = 118.493(5)°. The structure of La0.92Bi1.08S3 is built of NaCl-type Bi2S5 blocks and BiS4 and LaS5 infinitely long chains, forming a compact three-dimensional framework with parallel tunnels. Optical spectroscopy and resistivity measurements reveal a semiconducting behavior with a band gap of ∼1 eV and activation energy for transport of 0.36(1) eV. Thermopower measurements suggest the majority carriers of La0.92Bi1.08S3 are electrons. Heat capacity measurements indicate no phase transitions from 2 to 300 K. Band structure calculations at the density functional theory level confirm the semiconducting nature and the indirect gap of La0.92Bi1.08S3.",
author = "Fei Han and Huimei Liu and Malliakas, {Christos D.} and Mihai Sturza and Chung, {Duck Young} and Xiangang Wan and Kanatzidis, {Mercouri G}",
year = "2016",
month = "4",
day = "18",
doi = "10.1021/acs.inorgchem.6b00025",
language = "English",
volume = "55",
pages = "3547--3552",
journal = "Inorganic Chemistry",
issn = "0020-1669",
publisher = "American Chemical Society",
number = "7",

}

TY - JOUR

T1 - La1-xBi1+xS3 (x ≈ 0.08)

T2 - An n-Type Semiconductor

AU - Han, Fei

AU - Liu, Huimei

AU - Malliakas, Christos D.

AU - Sturza, Mihai

AU - Chung, Duck Young

AU - Wan, Xiangang

AU - Kanatzidis, Mercouri G

PY - 2016/4/18

Y1 - 2016/4/18

N2 - The new bismuth chalcogenide La0.92Bi1.08S3 crystallizes in the monoclinic space group C2/m with a = 28.0447(19) Å, b = 4.0722(2) Å, c = 14.7350(9) Å, and β = 118.493(5)°. The structure of La0.92Bi1.08S3 is built of NaCl-type Bi2S5 blocks and BiS4 and LaS5 infinitely long chains, forming a compact three-dimensional framework with parallel tunnels. Optical spectroscopy and resistivity measurements reveal a semiconducting behavior with a band gap of ∼1 eV and activation energy for transport of 0.36(1) eV. Thermopower measurements suggest the majority carriers of La0.92Bi1.08S3 are electrons. Heat capacity measurements indicate no phase transitions from 2 to 300 K. Band structure calculations at the density functional theory level confirm the semiconducting nature and the indirect gap of La0.92Bi1.08S3.

AB - The new bismuth chalcogenide La0.92Bi1.08S3 crystallizes in the monoclinic space group C2/m with a = 28.0447(19) Å, b = 4.0722(2) Å, c = 14.7350(9) Å, and β = 118.493(5)°. The structure of La0.92Bi1.08S3 is built of NaCl-type Bi2S5 blocks and BiS4 and LaS5 infinitely long chains, forming a compact three-dimensional framework with parallel tunnels. Optical spectroscopy and resistivity measurements reveal a semiconducting behavior with a band gap of ∼1 eV and activation energy for transport of 0.36(1) eV. Thermopower measurements suggest the majority carriers of La0.92Bi1.08S3 are electrons. Heat capacity measurements indicate no phase transitions from 2 to 300 K. Band structure calculations at the density functional theory level confirm the semiconducting nature and the indirect gap of La0.92Bi1.08S3.

UR - http://www.scopus.com/inward/record.url?scp=84964355238&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84964355238&partnerID=8YFLogxK

U2 - 10.1021/acs.inorgchem.6b00025

DO - 10.1021/acs.inorgchem.6b00025

M3 - Article

AN - SCOPUS:84964355238

VL - 55

SP - 3547

EP - 3552

JO - Inorganic Chemistry

JF - Inorganic Chemistry

SN - 0020-1669

IS - 7

ER -