Lateral field emitters fabricated using carbon nanotubes

A. S. Teh, S. B. Lee, K. B.K. Teo, M. Chhowalla, W. I. Milne, D. G. Hasko, H. Ahmed, G. A.J. Amaratunga

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

We report on the fabrication of lateral emitters using carbon nanotubes (CNTs) grown via plasma enhanced chemical vapour deposition (PECVD). Carbon nanotubes are dispersed randomly onto a substrate, mapped, contacted with metal, and by etching the substrate, a suspended lateral emitter structure is formed. Field emission measurements from the lateral emitters show a turn-on voltage as low as 12 V. The emission characteristics showed good fits to the Fowler-Nordheim (FN) theory indicating that conventional field emission was indeed observed from these devices.

Original languageEnglish
Pages (from-to)789-796
Number of pages8
JournalMicroelectronic Engineering
Volume67-68
DOIs
Publication statusPublished - Jun 1 2003
EventProceedings of the 28th International Conference on MNE - Lugano, Switzerland
Duration: Sep 16 2002Sep 19 2002

Keywords

  • Carbon nanotube
  • Field emission
  • Lateral

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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  • Cite this

    Teh, A. S., Lee, S. B., Teo, K. B. K., Chhowalla, M., Milne, W. I., Hasko, D. G., Ahmed, H., & Amaratunga, G. A. J. (2003). Lateral field emitters fabricated using carbon nanotubes. Microelectronic Engineering, 67-68, 789-796. https://doi.org/10.1016/S0167-9317(03)00140-0