Lateral field emitters fabricated using carbon nanotubes

A. S. Teh; S. B. Lee; K. B.K. Teo; M. Chhowalla; W. I. Milne; D. G. Hasko; H. Ahmed; G. A.J. Amaratunga

doi:10.1016/S0167-9317(03)00140-0

Lateral field emitters fabricated using carbon nanotubes

A. S. Teh, S. B. Lee, K. B.K. Teo, M. Chhowalla, W. I. Milne, D. G. Hasko, H. Ahmed, G. A.J. Amaratunga

Rutgers University

Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Abstract

We report on the fabrication of lateral emitters using carbon nanotubes (CNTs) grown via plasma enhanced chemical vapour deposition (PECVD). Carbon nanotubes are dispersed randomly onto a substrate, mapped, contacted with metal, and by etching the substrate, a suspended lateral emitter structure is formed. Field emission measurements from the lateral emitters show a turn-on voltage as low as 12 V. The emission characteristics showed good fits to the Fowler-Nordheim (FN) theory indicating that conventional field emission was indeed observed from these devices.

Original language	English
Pages (from-to)	789-796
Number of pages	8
Journal	Microelectronic Engineering
Volume	67-68
DOIs	https://doi.org/10.1016/S0167-9317(03)00140-0
Publication status	Published - Jun 1 2003
Event	Proceedings of the 28th International Conference on MNE - Lugano, Switzerland Duration: Sep 16 2002 → Sep 19 2002

Keywords

Carbon nanotube
Field emission
Lateral

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(03)00140-0

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Cite this

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title = "Lateral field emitters fabricated using carbon nanotubes",

abstract = "We report on the fabrication of lateral emitters using carbon nanotubes (CNTs) grown via plasma enhanced chemical vapour deposition (PECVD). Carbon nanotubes are dispersed randomly onto a substrate, mapped, contacted with metal, and by etching the substrate, a suspended lateral emitter structure is formed. Field emission measurements from the lateral emitters show a turn-on voltage as low as 12 V. The emission characteristics showed good fits to the Fowler-Nordheim (FN) theory indicating that conventional field emission was indeed observed from these devices.",

keywords = "Carbon nanotube, Field emission, Lateral",

author = "Teh, {A. S.} and Lee, {S. B.} and Teo, {K. B.K.} and M. Chhowalla and Milne, {W. I.} and Hasko, {D. G.} and H. Ahmed and Amaratunga, {G. A.J.}",

year = "2003",

month = jun,

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doi = "10.1016/S0167-9317(03)00140-0",

language = "English",

volume = "67-68",

pages = "789--796",

journal = "Microelectronic Engineering",

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note = "Proceedings of the 28th International Conference on MNE ; Conference date: 16-09-2002 Through 19-09-2002",

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TY - JOUR

T1 - Lateral field emitters fabricated using carbon nanotubes

AU - Teh, A. S.

AU - Lee, S. B.

AU - Teo, K. B.K.

AU - Chhowalla, M.

AU - Milne, W. I.

AU - Hasko, D. G.

AU - Ahmed, H.

AU - Amaratunga, G. A.J.

PY - 2003/6/1

Y1 - 2003/6/1

N2 - We report on the fabrication of lateral emitters using carbon nanotubes (CNTs) grown via plasma enhanced chemical vapour deposition (PECVD). Carbon nanotubes are dispersed randomly onto a substrate, mapped, contacted with metal, and by etching the substrate, a suspended lateral emitter structure is formed. Field emission measurements from the lateral emitters show a turn-on voltage as low as 12 V. The emission characteristics showed good fits to the Fowler-Nordheim (FN) theory indicating that conventional field emission was indeed observed from these devices.

AB - We report on the fabrication of lateral emitters using carbon nanotubes (CNTs) grown via plasma enhanced chemical vapour deposition (PECVD). Carbon nanotubes are dispersed randomly onto a substrate, mapped, contacted with metal, and by etching the substrate, a suspended lateral emitter structure is formed. Field emission measurements from the lateral emitters show a turn-on voltage as low as 12 V. The emission characteristics showed good fits to the Fowler-Nordheim (FN) theory indicating that conventional field emission was indeed observed from these devices.

KW - Carbon nanotube

KW - Field emission

KW - Lateral

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DO - 10.1016/S0167-9317(03)00140-0

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VL - 67-68

SP - 789

EP - 796

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

T2 - Proceedings of the 28th International Conference on MNE

Y2 - 16 September 2002 through 19 September 2002

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