Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics

Jian Zhu, Xiaolong Liu, Michael L. Geier, Julian J. McMorrow, Deep Jariwala, Megan E. Beck, Wei Huang, Tobin J Marks, Mark C Hersam

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Layer-by-layer assembled 2D montmorillonite nanosheets are shown to be high-performance, solution-processed dielectrics. These scalable and spatially uniform sub-10 nm thick dielectrics yield high areal capacitances of ≈600 nF cm-2 and low leakage currents down to 6 × 10-9A cm-2 that enable low voltage operation of p-type semiconducting single-walled carbon nanotube and n-type indium gallium zinc oxide field-effect transistors.

Original languageEnglish
Pages (from-to)63-68
Number of pages6
JournalAdvanced Materials
Volume28
Issue number1
DOIs
Publication statusPublished - Jan 6 2016

Fingerprint

Bentonite
Clay minerals
Electronic equipment
Zinc Oxide
Gallium
Indium
Nanosheets
Single-walled carbon nanotubes (SWCN)
Field effect transistors
Zinc oxide
Leakage currents
Capacitance
Electric potential

Keywords

  • 2D dielectrics
  • capacitors
  • LBL assembly
  • nanosheets
  • transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics. / Zhu, Jian; Liu, Xiaolong; Geier, Michael L.; McMorrow, Julian J.; Jariwala, Deep; Beck, Megan E.; Huang, Wei; Marks, Tobin J; Hersam, Mark C.

In: Advanced Materials, Vol. 28, No. 1, 06.01.2016, p. 63-68.

Research output: Contribution to journalArticle

Zhu, Jian ; Liu, Xiaolong ; Geier, Michael L. ; McMorrow, Julian J. ; Jariwala, Deep ; Beck, Megan E. ; Huang, Wei ; Marks, Tobin J ; Hersam, Mark C. / Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics. In: Advanced Materials. 2016 ; Vol. 28, No. 1. pp. 63-68.
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