Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

W. Fan, S. Saha, J. A. Carlisle, O. Auciello, Robert P. H. Chang, R. Ramesh

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The integration of amorphous Ti-Al was investigated for Cu for fabrication of oxide thin film-based capacitors. The Cu and Ta layers remained intact through high temperature oxygen annealing due to the thin oxide layer formed on the Ti-Al surface. The results demonstrated that the Ti-Al/Cu/Ta layered structure provided a good alternative electrode technology to Pt for the fabrication of BST capacitors.

Original languageEnglish
Pages (from-to)1452-1454
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number9
DOIs
Publication statusPublished - Mar 3 2003

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capacitors
permittivity
fabrication
electrodes
oxides
thin films
annealing
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices. / Fan, W.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, Robert P. H.; Ramesh, R.

In: Applied Physics Letters, Vol. 82, No. 9, 03.03.2003, p. 1452-1454.

Research output: Contribution to journalArticle

Fan, W. ; Saha, S. ; Carlisle, J. A. ; Auciello, O. ; Chang, Robert P. H. ; Ramesh, R. / Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices. In: Applied Physics Letters. 2003 ; Vol. 82, No. 9. pp. 1452-1454.
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