Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

W. Fan, S. Saha, J. A. Carlisle, O. Auciello, R. P.H. Chang, R. Ramesh

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Abstract

The integration of amorphous Ti-Al was investigated for Cu for fabrication of oxide thin film-based capacitors. The Cu and Ta layers remained intact through high temperature oxygen annealing due to the thin oxide layer formed on the Ti-Al surface. The results demonstrated that the Ti-Al/Cu/Ta layered structure provided a good alternative electrode technology to Pt for the fabrication of BST capacitors.

Original languageEnglish
Pages (from-to)1452-1454
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number9
DOIs
Publication statusPublished - Mar 3 2003

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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