Lifetimes of hydrogen and deuterium related vibrational modes in silicon

M. Budde; G. Lüpke; E. Chen; X. Zhang; N. H. Tolk; L. C. Feldman; E. Tarhan; A. K. Ramdas; M. Stavola

doi:10.1103/PhysRevLett.87.145501

Lifetimes of hydrogen and deuterium related vibrational modes in silicon

M. Budde, G. Lüpke, E. Chen, X. Zhang, N. H. Tolk, L. C. Feldman, E. Tarhan, A. K. Ramdas, M. Stavola

Rutgers University

Research output: Contribution to journal › Article

46 Citations (Scopus)

Abstract

The lifetimes of a selection of Si-H and Si-D stretch modes of point defects in Si were measured. It was demonstrated that H-terminated dangling bonds, exemplified by the HVuVH₍₁₁₀₎ defect, have particularly long lifetimes, and that the H/D isotope dependencies of their lifetimes are "inverted".

Original language	English
Article number	145501
Pages (from-to)	145501/1-145501/4
Journal	Physical review letters
Volume	87
Issue number	14
DOIs	https://doi.org/10.1103/PhysRevLett.87.145501
Publication status	Published - Oct 1 2001

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Budde, M., Lüpke, G., Chen, E., Zhang, X., Tolk, N. H., Feldman, L. C., Tarhan, E., Ramdas, A. K., & Stavola, M. (2001). Lifetimes of hydrogen and deuterium related vibrational modes in silicon. Physical review letters, 87(14), 145501/1-145501/4. [145501]. https://doi.org/10.1103/PhysRevLett.87.145501

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10.1103/PhysRevLett.87.145501