Lifetimes of hydrogen and deuterium related vibrational modes in silicon

M. Budde, G. Lüpke, E. Chen, X. Zhang, N. H. Tolk, L. C. Feldman, E. Tarhan, A. K. Ramdas, M. Stavola

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Abstract

The lifetimes of a selection of Si-H and Si-D stretch modes of point defects in Si were measured. It was demonstrated that H-terminated dangling bonds, exemplified by the HVuVH(110) defect, have particularly long lifetimes, and that the H/D isotope dependencies of their lifetimes are "inverted".

Original languageEnglish
Article number145501
Pages (from-to)145501/1-145501/4
JournalPhysical review letters
Volume87
Issue number14
DOIs
Publication statusPublished - Oct 1 2001

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Budde, M., Lüpke, G., Chen, E., Zhang, X., Tolk, N. H., Feldman, L. C., Tarhan, E., Ramdas, A. K., & Stavola, M. (2001). Lifetimes of hydrogen and deuterium related vibrational modes in silicon. Physical review letters, 87(14), 145501/1-145501/4. [145501]. https://doi.org/10.1103/PhysRevLett.87.145501