Lifetimes of hydrogen and deuterium related vibrational modes in silicon

M. Budde; G. Lüpke; E. Chen; X. Zhang; N. H. Tolk; L. C. Feldman; E. Tarhan; A. K. Ramdas; M. Stavola

doi:10.1103/PhysRevLett.87.145501

Lifetimes of hydrogen and deuterium related vibrational modes in silicon

M. Budde, G. Lüpke, E. Chen, X. Zhang, N. H. Tolk, L. C. Feldman, E. Tarhan, A. K. Ramdas, M. Stavola

Rutgers University

Research output: Contribution to journal › Article

46 Citations (Scopus)

Abstract

The lifetimes of a selection of Si-H and Si-D stretch modes of point defects in Si were measured. It was demonstrated that H-terminated dangling bonds, exemplified by the HVuVH₍₁₁₀₎ defect, have particularly long lifetimes, and that the H/D isotope dependencies of their lifetimes are "inverted".

Original language	English
Article number	145501
Pages (from-to)	145501/1-145501/4
Journal	Physical review letters
Volume	87
Issue number	14
DOIs	https://doi.org/10.1103/PhysRevLett.87.145501
Publication status	Published - Oct 1 2001

ASJC Scopus subject areas

Physics and Astronomy(all)

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Budde, M., Lüpke, G., Chen, E., Zhang, X., Tolk, N. H., Feldman, L. C., Tarhan, E., Ramdas, A. K., & Stavola, M. (2001). Lifetimes of hydrogen and deuterium related vibrational modes in silicon. Physical review letters, 87(14), 145501/1-145501/4. [145501]. https://doi.org/10.1103/PhysRevLett.87.145501

@article{c0c9a454323e41f8995ecd45dba908b6,

title = "Lifetimes of hydrogen and deuterium related vibrational modes in silicon",

abstract = "The lifetimes of a selection of Si-H and Si-D stretch modes of point defects in Si were measured. It was demonstrated that H-terminated dangling bonds, exemplified by the HVuVH(110) defect, have particularly long lifetimes, and that the H/D isotope dependencies of their lifetimes are {"}inverted{"}.",

author = "M. Budde and G. L{\"u}pke and E. Chen and X. Zhang and Tolk, {N. H.} and Feldman, {L. C.} and E. Tarhan and Ramdas, {A. K.} and M. Stavola",

year = "2001",

month = oct,

day = "1",

doi = "10.1103/PhysRevLett.87.145501",

language = "English",

volume = "87",

pages = "145501/1--145501/4",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "14",

}

TY - JOUR

T1 - Lifetimes of hydrogen and deuterium related vibrational modes in silicon

AU - Budde, M.

AU - Lüpke, G.

AU - Chen, E.

AU - Zhang, X.

AU - Tolk, N. H.

AU - Feldman, L. C.

AU - Tarhan, E.

AU - Ramdas, A. K.

AU - Stavola, M.

PY - 2001/10/1

Y1 - 2001/10/1

N2 - The lifetimes of a selection of Si-H and Si-D stretch modes of point defects in Si were measured. It was demonstrated that H-terminated dangling bonds, exemplified by the HVuVH(110) defect, have particularly long lifetimes, and that the H/D isotope dependencies of their lifetimes are "inverted".

AB - The lifetimes of a selection of Si-H and Si-D stretch modes of point defects in Si were measured. It was demonstrated that H-terminated dangling bonds, exemplified by the HVuVH(110) defect, have particularly long lifetimes, and that the H/D isotope dependencies of their lifetimes are "inverted".

UR - http://www.scopus.com/inward/record.url?scp=37649026553&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37649026553&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.87.145501

DO - 10.1103/PhysRevLett.87.145501

M3 - Article

AN - SCOPUS:37649026553

VL - 87

SP - 145501/1-145501/4

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 14

M1 - 145501

ER -