Abstract
The lifetimes of a selection of Si-H and Si-D stretch modes of point defects in Si were measured. It was demonstrated that H-terminated dangling bonds, exemplified by the HVuVH(110) defect, have particularly long lifetimes, and that the H/D isotope dependencies of their lifetimes are "inverted".
Original language | English |
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Article number | 145501 |
Pages (from-to) | 145501/1-145501/4 |
Journal | Physical review letters |
Volume | 87 |
Issue number | 14 |
DOIs | |
Publication status | Published - Oct 1 2001 |
ASJC Scopus subject areas
- Physics and Astronomy(all)