Lifetimes of hydrogen and deuterium related vibrational modes in silicon

M. Budde, G. Lüpke, E. Chen, X. Zhang, N. H. Tolk, Leonard C Feldman, E. Tarhan, A. K. Ramdas, M. Stavola

Research output: Contribution to journalArticle

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Abstract

The lifetimes of a selection of Si-H and Si-D stretch modes of point defects in Si were measured. It was demonstrated that H-terminated dangling bonds, exemplified by the HVuVH(110) defect, have particularly long lifetimes, and that the H/D isotope dependencies of their lifetimes are "inverted".

Original languageEnglish
Article number145501
JournalPhysical Review Letters
Volume87
Issue number14
DOIs
Publication statusPublished - Oct 1 2001

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deuterium
vibration mode
life (durability)
silicon
hydrogen
point defects
isotopes
defects

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Lifetimes of hydrogen and deuterium related vibrational modes in silicon. / Budde, M.; Lüpke, G.; Chen, E.; Zhang, X.; Tolk, N. H.; Feldman, Leonard C; Tarhan, E.; Ramdas, A. K.; Stavola, M.

In: Physical Review Letters, Vol. 87, No. 14, 145501, 01.10.2001.

Research output: Contribution to journalArticle

Budde, M, Lüpke, G, Chen, E, Zhang, X, Tolk, NH, Feldman, LC, Tarhan, E, Ramdas, AK & Stavola, M 2001, 'Lifetimes of hydrogen and deuterium related vibrational modes in silicon', Physical Review Letters, vol. 87, no. 14, 145501. https://doi.org/10.1103/PhysRevLett.87.145501
Budde, M. ; Lüpke, G. ; Chen, E. ; Zhang, X. ; Tolk, N. H. ; Feldman, Leonard C ; Tarhan, E. ; Ramdas, A. K. ; Stavola, M. / Lifetimes of hydrogen and deuterium related vibrational modes in silicon. In: Physical Review Letters. 2001 ; Vol. 87, No. 14.
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