Light emission from 4H SiC MOSFETs with and without NO passivation

R. E. Stahlbush, P. J. Macfarlane, J. R. Williams, G. Y. Chung, Leonard C Feldman, K. McDonald

Research output: Contribution to journal › Article

Abstract

Images and spectra of light emission from 4H SiC MOSFETs with and without NO annealing have been studied. The emission is induced by driving the channel between accumulation and inversion. By varying the pulse train to the gate, the flow of electrons into the channel can be tracked. The electron flow in the NO-annealed MOSFEETs is an order of magnitude faster than the flow in the control MOSFETs without the anneal. Time resolved spectra allow emission processes from the interface and bulk to be separated, but do not exhibit significant differences between the MOSFETs with and without NO annealing.

Original languageEnglish
Pages (from-to)393-398
Number of pages6
JournalMicroelectronic Engineering
Volume59
Issue number1-4
DOIs
Publication statusPublished - Nov 2001

Fingerprint

Light emission
Passivation
passivity
light emission
field effect transistors
Annealing
Electrons
annealing
emission spectra
electrons
inversions
pulses

Keywords

  • Bulk recombination
  • Electroluminescence
  • Interface recombination
  • NO annealing
  • SiC

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Stahlbush, R. E., Macfarlane, P. J., Williams, J. R., Chung, G. Y., Feldman, L. C., & McDonald, K. (2001). Light emission from 4H SiC MOSFETs with and without NO passivation. Microelectronic Engineering, 59(1-4), 393-398. https://doi.org/10.1016/S0167-9317(01)00674-8

Light emission from 4H SiC MOSFETs with and without NO passivation. / Stahlbush, R. E.; Macfarlane, P. J.; Williams, J. R.; Chung, G. Y.; Feldman, Leonard C; McDonald, K.

In: Microelectronic Engineering, Vol. 59, No. 1-4, 11.2001, p. 393-398.

Research output: Contribution to journal › Article

Stahlbush, RE, Macfarlane, PJ, Williams, JR, Chung, GY, Feldman, LC & McDonald, K 2001, 'Light emission from 4H SiC MOSFETs with and without NO passivation', Microelectronic Engineering, vol. 59, no. 1-4, pp. 393-398. https://doi.org/10.1016/S0167-9317(01)00674-8
Stahlbush RE, Macfarlane PJ, Williams JR, Chung GY, Feldman LC, McDonald K. Light emission from 4H SiC MOSFETs with and without NO passivation. Microelectronic Engineering. 2001 Nov;59(1-4):393-398. https://doi.org/10.1016/S0167-9317(01)00674-8
Stahlbush, R. E. ; Macfarlane, P. J. ; Williams, J. R. ; Chung, G. Y. ; Feldman, Leonard C ; McDonald, K. / Light emission from 4H SiC MOSFETs with and without NO passivation. In: Microelectronic Engineering. 2001 ; Vol. 59, No. 1-4. pp. 393-398.
@article{c0ba1b040b7a42c4a52b26aa9bc29867,
title = "Light emission from 4H SiC MOSFETs with and without NO passivation",
abstract = "Images and spectra of light emission from 4H SiC MOSFETs with and without NO annealing have been studied. The emission is induced by driving the channel between accumulation and inversion. By varying the pulse train to the gate, the flow of electrons into the channel can be tracked. The electron flow in the NO-annealed MOSFEETs is an order of magnitude faster than the flow in the control MOSFETs without the anneal. Time resolved spectra allow emission processes from the interface and bulk to be separated, but do not exhibit significant differences between the MOSFETs with and without NO annealing.",
keywords = "Bulk recombination, Electroluminescence, Interface recombination, NO annealing, SiC",
author = "Stahlbush, {R. E.} and Macfarlane, {P. J.} and Williams, {J. R.} and Chung, {G. Y.} and Feldman, {Leonard C} and K. McDonald",
year = "2001",
month = "11",
doi = "10.1016/S0167-9317(01)00674-8",
language = "English",
volume = "59",
pages = "393--398",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Light emission from 4H SiC MOSFETs with and without NO passivation

AU - Stahlbush, R. E.

AU - Macfarlane, P. J.

AU - Williams, J. R.

AU - Chung, G. Y.

AU - Feldman, Leonard C

AU - McDonald, K.

PY - 2001/11

Y1 - 2001/11

N2 - Images and spectra of light emission from 4H SiC MOSFETs with and without NO annealing have been studied. The emission is induced by driving the channel between accumulation and inversion. By varying the pulse train to the gate, the flow of electrons into the channel can be tracked. The electron flow in the NO-annealed MOSFEETs is an order of magnitude faster than the flow in the control MOSFETs without the anneal. Time resolved spectra allow emission processes from the interface and bulk to be separated, but do not exhibit significant differences between the MOSFETs with and without NO annealing.

AB - Images and spectra of light emission from 4H SiC MOSFETs with and without NO annealing have been studied. The emission is induced by driving the channel between accumulation and inversion. By varying the pulse train to the gate, the flow of electrons into the channel can be tracked. The electron flow in the NO-annealed MOSFEETs is an order of magnitude faster than the flow in the control MOSFETs without the anneal. Time resolved spectra allow emission processes from the interface and bulk to be separated, but do not exhibit significant differences between the MOSFETs with and without NO annealing.

KW - Bulk recombination

KW - Electroluminescence

KW - Interface recombination

KW - NO annealing

KW - SiC

UR - http://www.scopus.com/inward/record.url?scp=0035498571&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035498571&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(01)00674-8

DO - 10.1016/S0167-9317(01)00674-8

M3 - Article

VL - 59

SP - 393

EP - 398

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 1-4

ER -

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