Abstract
Images and spectra of light emission from 4H SiC MOSFETs with and without NO annealing have been studied. The emission is induced by driving the channel between accumulation and inversion. By varying the pulse train to the gate, the flow of electrons into the channel can be tracked. The electron flow in the NO-annealed MOSFEETs is an order of magnitude faster than the flow in the control MOSFETs without the anneal. Time resolved spectra allow emission processes from the interface and bulk to be separated, but do not exhibit significant differences between the MOSFETs with and without NO annealing.
| Original language | English |
|---|---|
| Pages (from-to) | 393-398 |
| Number of pages | 6 |
| Journal | Microelectronic Engineering |
| Volume | 59 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - Nov 2001 |
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Keywords
- Bulk recombination
- Electroluminescence
- Interface recombination
- NO annealing
- SiC
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
Cite this
Light emission from 4H SiC MOSFETs with and without NO passivation. / Stahlbush, R. E.; Macfarlane, P. J.; Williams, J. R.; Chung, G. Y.; Feldman, Leonard C; McDonald, K.
In: Microelectronic Engineering, Vol. 59, No. 1-4, 11.2001, p. 393-398.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Light emission from 4H SiC MOSFETs with and without NO passivation
AU - Stahlbush, R. E.
AU - Macfarlane, P. J.
AU - Williams, J. R.
AU - Chung, G. Y.
AU - Feldman, Leonard C
AU - McDonald, K.
PY - 2001/11
Y1 - 2001/11
N2 - Images and spectra of light emission from 4H SiC MOSFETs with and without NO annealing have been studied. The emission is induced by driving the channel between accumulation and inversion. By varying the pulse train to the gate, the flow of electrons into the channel can be tracked. The electron flow in the NO-annealed MOSFEETs is an order of magnitude faster than the flow in the control MOSFETs without the anneal. Time resolved spectra allow emission processes from the interface and bulk to be separated, but do not exhibit significant differences between the MOSFETs with and without NO annealing.
AB - Images and spectra of light emission from 4H SiC MOSFETs with and without NO annealing have been studied. The emission is induced by driving the channel between accumulation and inversion. By varying the pulse train to the gate, the flow of electrons into the channel can be tracked. The electron flow in the NO-annealed MOSFEETs is an order of magnitude faster than the flow in the control MOSFETs without the anneal. Time resolved spectra allow emission processes from the interface and bulk to be separated, but do not exhibit significant differences between the MOSFETs with and without NO annealing.
KW - Bulk recombination
KW - Electroluminescence
KW - Interface recombination
KW - NO annealing
KW - SiC
UR - http://www.scopus.com/inward/record.url?scp=0035498571&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035498571&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(01)00674-8
DO - 10.1016/S0167-9317(01)00674-8
M3 - Article
AN - SCOPUS:0035498571
VL - 59
SP - 393
EP - 398
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 1-4
ER -