Light emission from 4H SiC MOSFETs with and without NO passivation

R. E. Stahlbush; P. J. Macfarlane; J. R. Williams; G. Y. Chung; L. C. Feldman; K. McDonald

doi:10.1016/S0167-9317(01)00674-8

Light emission from 4H SiC MOSFETs with and without NO passivation

R. E. Stahlbush, P. J. Macfarlane, J. R. Williams, G. Y. Chung, L. C. Feldman, K. McDonald

Rutgers University

Research output: Contribution to journal › Conference article › peer-review

Abstract

Images and spectra of light emission from 4H SiC MOSFETs with and without NO annealing have been studied. The emission is induced by driving the channel between accumulation and inversion. By varying the pulse train to the gate, the flow of electrons into the channel can be tracked. The electron flow in the NO-annealed MOSFEETs is an order of magnitude faster than the flow in the control MOSFETs without the anneal. Time resolved spectra allow emission processes from the interface and bulk to be separated, but do not exhibit significant differences between the MOSFETs with and without NO annealing.

Original language	English
Pages (from-to)	393-398
Number of pages	6
Journal	Microelectronic Engineering
Volume	59
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(01)00674-8
Publication status	Published - Nov 1 2001
Event	12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) - Udine, Italy Duration: Jun 20 2001 → Jun 23 2001

Keywords

Bulk recombination
Electroluminescence
Interface recombination
NO annealing
SiC

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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title = "Light emission from 4H SiC MOSFETs with and without NO passivation",

abstract = "Images and spectra of light emission from 4H SiC MOSFETs with and without NO annealing have been studied. The emission is induced by driving the channel between accumulation and inversion. By varying the pulse train to the gate, the flow of electrons into the channel can be tracked. The electron flow in the NO-annealed MOSFEETs is an order of magnitude faster than the flow in the control MOSFETs without the anneal. Time resolved spectra allow emission processes from the interface and bulk to be separated, but do not exhibit significant differences between the MOSFETs with and without NO annealing.",

keywords = "Bulk recombination, Electroluminescence, Interface recombination, NO annealing, SiC",

author = "Stahlbush, {R. E.} and Macfarlane, {P. J.} and Williams, {J. R.} and Chung, {G. Y.} and Feldman, {L. C.} and K. McDonald",

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doi = "10.1016/S0167-9317(01)00674-8",

language = "English",

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pages = "393--398",

journal = "Microelectronic Engineering",

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TY - JOUR

T1 - Light emission from 4H SiC MOSFETs with and without NO passivation

AU - Stahlbush, R. E.

AU - Macfarlane, P. J.

AU - Williams, J. R.

AU - Chung, G. Y.

AU - Feldman, L. C.

AU - McDonald, K.

PY - 2001/11/1

Y1 - 2001/11/1

N2 - Images and spectra of light emission from 4H SiC MOSFETs with and without NO annealing have been studied. The emission is induced by driving the channel between accumulation and inversion. By varying the pulse train to the gate, the flow of electrons into the channel can be tracked. The electron flow in the NO-annealed MOSFEETs is an order of magnitude faster than the flow in the control MOSFETs without the anneal. Time resolved spectra allow emission processes from the interface and bulk to be separated, but do not exhibit significant differences between the MOSFETs with and without NO annealing.

AB - Images and spectra of light emission from 4H SiC MOSFETs with and without NO annealing have been studied. The emission is induced by driving the channel between accumulation and inversion. By varying the pulse train to the gate, the flow of electrons into the channel can be tracked. The electron flow in the NO-annealed MOSFEETs is an order of magnitude faster than the flow in the control MOSFETs without the anneal. Time resolved spectra allow emission processes from the interface and bulk to be separated, but do not exhibit significant differences between the MOSFETs with and without NO annealing.

KW - Bulk recombination

KW - Electroluminescence

KW - Interface recombination

KW - NO annealing

KW - SiC

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JF - Microelectronic Engineering

SN - 0167-9317

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