Light emission from 4H SiC MOSFETs with and without NO passivation

R. E. Stahlbush, P. J. Macfarlane, J. R. Williams, G. Y. Chung, L. C. Feldman, K. McDonald

Research output: Contribution to journalConference article

Abstract

Images and spectra of light emission from 4H SiC MOSFETs with and without NO annealing have been studied. The emission is induced by driving the channel between accumulation and inversion. By varying the pulse train to the gate, the flow of electrons into the channel can be tracked. The electron flow in the NO-annealed MOSFEETs is an order of magnitude faster than the flow in the control MOSFETs without the anneal. Time resolved spectra allow emission processes from the interface and bulk to be separated, but do not exhibit significant differences between the MOSFETs with and without NO annealing.

Original languageEnglish
Pages (from-to)393-398
Number of pages6
JournalMicroelectronic Engineering
Volume59
Issue number1-4
DOIs
Publication statusPublished - Nov 1 2001
Event12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) - Udine, Italy
Duration: Jun 20 2001Jun 23 2001

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Keywords

  • Bulk recombination
  • Electroluminescence
  • Interface recombination
  • NO annealing
  • SiC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Stahlbush, R. E., Macfarlane, P. J., Williams, J. R., Chung, G. Y., Feldman, L. C., & McDonald, K. (2001). Light emission from 4H SiC MOSFETs with and without NO passivation. Microelectronic Engineering, 59(1-4), 393-398. https://doi.org/10.1016/S0167-9317(01)00674-8