Local density valence band offset in GaAs/AlAs: Role of interface dipole

S. Massidda, B. I. Min, Arthur J Freeman

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The valence band offset, ΔEV,at the lattice-matched GaAs/AlAs(001) interface is derived from highly precise self- consistent all-electron local density band structure calculations of the (GaAs)n(AlAs)n(001) superlattices (with n ≤ 3). Using the core levels as reference energies, we find that ΔEV = 0.50 ± 0.05 eV, in very good agreement with recent experimental results (ΔEV = 0.45 - 0.55 eV). The dependence of ΔEV on the superlattice thickness is studied and related to the interface charge redistribution which produces an interface dipole potential estimated to be ∼ 0.14 eV.

Original languageEnglish
Pages (from-to)15-17
Number of pages3
JournalSuperlattices and Microstructures
Volume4
Issue number1
DOIs
Publication statusPublished - 1988

Fingerprint

Core levels
Superlattices
Valence bands
Band structure
dipoles
valence
Electrons
superlattices
gallium arsenide
electrons
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Local density valence band offset in GaAs/AlAs : Role of interface dipole. / Massidda, S.; Min, B. I.; Freeman, Arthur J.

In: Superlattices and Microstructures, Vol. 4, No. 1, 1988, p. 15-17.

Research output: Contribution to journalArticle

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