Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks

R. Kalish; L. Y. Kramer; K. K. Law; J. L. Merz; L. C. Feldman; D. C. Jacobson; B. E. Weir

doi:10.1063/1.108136

Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks

R. Kalish, L. Y. Kramer, K. K. Law, J. L. Merz, L. C. Feldman, D. C. Jacobson, B. E. Weir

Rutgers University

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The intermixing of GaAs/AlGaAs quantum wells due to the passage of single energetic heavy ions (8 MeV Bi) is deduced from photoluminescence measurements after rapid thermal annealing (900°C, 4 min). It is found that while the structural damage radius around an ion track due to pure kinematic mixing is very small (1.0-3.0 nm), thermal annealing increases this mixing radius by more than an order of magnitude (to ∼20 nm). This finding has important implications for ion-beam definition of quantum dots or wires in quantum well structures. Our results also clarify the proposed explanation of particle channeling as the cause of ion induced mixing far in excess of the amorphous range.

Original language	English
Pages (from-to)	2589-2591
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	21
DOIs	https://doi.org/10.1063/1.108136
Publication status	Published - 1992

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The intermixing of GaAs/AlGaAs quantum wells due to the passage of single energetic heavy ions (8 MeV Bi) is deduced from photoluminescence measurements after rapid thermal annealing (900°C, 4 min). It is found that while the structural damage radius around an ion track due to pure kinematic mixing is very small (1.0-3.0 nm), thermal annealing increases this mixing radius by more than an order of magnitude (to ∼20 nm). This finding has important implications for ion-beam definition of quantum dots or wires in quantum well structures. Our results also clarify the proposed explanation of particle channeling as the cause of ion induced mixing far in excess of the amorphous range.",

author = "R. Kalish and Kramer, {L. Y.} and Law, {K. K.} and Merz, {J. L.} and Feldman, {L. C.} and Jacobson, {D. C.} and Weir, {B. E.}",

year = "1992",

doi = "10.1063/1.108136",

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T1 - Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks

AU - Kalish, R.

AU - Kramer, L. Y.

AU - Law, K. K.

AU - Merz, J. L.

AU - Feldman, L. C.

AU - Jacobson, D. C.

AU - Weir, B. E.

PY - 1992

Y1 - 1992

N2 - The intermixing of GaAs/AlGaAs quantum wells due to the passage of single energetic heavy ions (8 MeV Bi) is deduced from photoluminescence measurements after rapid thermal annealing (900°C, 4 min). It is found that while the structural damage radius around an ion track due to pure kinematic mixing is very small (1.0-3.0 nm), thermal annealing increases this mixing radius by more than an order of magnitude (to ∼20 nm). This finding has important implications for ion-beam definition of quantum dots or wires in quantum well structures. Our results also clarify the proposed explanation of particle channeling as the cause of ion induced mixing far in excess of the amorphous range.

AB - The intermixing of GaAs/AlGaAs quantum wells due to the passage of single energetic heavy ions (8 MeV Bi) is deduced from photoluminescence measurements after rapid thermal annealing (900°C, 4 min). It is found that while the structural damage radius around an ion track due to pure kinematic mixing is very small (1.0-3.0 nm), thermal annealing increases this mixing radius by more than an order of magnitude (to ∼20 nm). This finding has important implications for ion-beam definition of quantum dots or wires in quantum well structures. Our results also clarify the proposed explanation of particle channeling as the cause of ion induced mixing far in excess of the amorphous range.

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Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks

Abstract

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