Abstract
The intermixing of GaAs/AlGaAs quantum wells due to the passage of single energetic heavy ions (8 MeV Bi) is deduced from photoluminescence measurements after rapid thermal annealing (900°C, 4 min). It is found that while the structural damage radius around an ion track due to pure kinematic mixing is very small (1.0-3.0 nm), thermal annealing increases this mixing radius by more than an order of magnitude (to ∼20 nm). This finding has important implications for ion-beam definition of quantum dots or wires in quantum well structures. Our results also clarify the proposed explanation of particle channeling as the cause of ion induced mixing far in excess of the amorphous range.
| Original language | English |
|---|---|
| Pages (from-to) | 2589-2591 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 61 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 1992 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks. / Kalish, R.; Kramer, L. Y.; Law, K. K.; Merz, J. L.; Feldman, Leonard C; Jacobson, D. C.; Weir, B. E.
In: Applied Physics Letters, Vol. 61, No. 21, 1992, p. 2589-2591.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks
AU - Kalish, R.
AU - Kramer, L. Y.
AU - Law, K. K.
AU - Merz, J. L.
AU - Feldman, Leonard C
AU - Jacobson, D. C.
AU - Weir, B. E.
PY - 1992
Y1 - 1992
N2 - The intermixing of GaAs/AlGaAs quantum wells due to the passage of single energetic heavy ions (8 MeV Bi) is deduced from photoluminescence measurements after rapid thermal annealing (900°C, 4 min). It is found that while the structural damage radius around an ion track due to pure kinematic mixing is very small (1.0-3.0 nm), thermal annealing increases this mixing radius by more than an order of magnitude (to ∼20 nm). This finding has important implications for ion-beam definition of quantum dots or wires in quantum well structures. Our results also clarify the proposed explanation of particle channeling as the cause of ion induced mixing far in excess of the amorphous range.
AB - The intermixing of GaAs/AlGaAs quantum wells due to the passage of single energetic heavy ions (8 MeV Bi) is deduced from photoluminescence measurements after rapid thermal annealing (900°C, 4 min). It is found that while the structural damage radius around an ion track due to pure kinematic mixing is very small (1.0-3.0 nm), thermal annealing increases this mixing radius by more than an order of magnitude (to ∼20 nm). This finding has important implications for ion-beam definition of quantum dots or wires in quantum well structures. Our results also clarify the proposed explanation of particle channeling as the cause of ion induced mixing far in excess of the amorphous range.
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U2 - 10.1063/1.108136
DO - 10.1063/1.108136
M3 - Article
VL - 61
SP - 2589
EP - 2591
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 21
ER -