Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks

R. Kalish, L. Y. Kramer, K. K. Law, J. L. Merz, L. C. Feldman, D. C. Jacobson, B. E. Weir

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Abstract

The intermixing of GaAs/AlGaAs quantum wells due to the passage of single energetic heavy ions (8 MeV Bi) is deduced from photoluminescence measurements after rapid thermal annealing (900°C, 4 min). It is found that while the structural damage radius around an ion track due to pure kinematic mixing is very small (1.0-3.0 nm), thermal annealing increases this mixing radius by more than an order of magnitude (to ∼20 nm). This finding has important implications for ion-beam definition of quantum dots or wires in quantum well structures. Our results also clarify the proposed explanation of particle channeling as the cause of ion induced mixing far in excess of the amorphous range.

Original languageEnglish
Pages (from-to)2589-2591
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number21
DOIs
Publication statusPublished - Dec 1 1992

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kalish, R., Kramer, L. Y., Law, K. K., Merz, J. L., Feldman, L. C., Jacobson, D. C., & Weir, B. E. (1992). Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks. Applied Physics Letters, 61(21), 2589-2591. https://doi.org/10.1063/1.108136