Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks

R. Kalish, L. Y. Kramer, K. K. Law, J. L. Merz, Leonard C Feldman, D. C. Jacobson, B. E. Weir

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The intermixing of GaAs/AlGaAs quantum wells due to the passage of single energetic heavy ions (8 MeV Bi) is deduced from photoluminescence measurements after rapid thermal annealing (900°C, 4 min). It is found that while the structural damage radius around an ion track due to pure kinematic mixing is very small (1.0-3.0 nm), thermal annealing increases this mixing radius by more than an order of magnitude (to ∼20 nm). This finding has important implications for ion-beam definition of quantum dots or wires in quantum well structures. Our results also clarify the proposed explanation of particle channeling as the cause of ion induced mixing far in excess of the amorphous range.

Original languageEnglish
Pages (from-to)2589-2591
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number21
DOIs
Publication statusPublished - 1992

Fingerprint

quantum wells
ions
annealing
radii
quantum wires
aluminum gallium arsenides
heavy ions
kinematics
ion beams
quantum dots
damage
photoluminescence
causes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kalish, R., Kramer, L. Y., Law, K. K., Merz, J. L., Feldman, L. C., Jacobson, D. C., & Weir, B. E. (1992). Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks. Applied Physics Letters, 61(21), 2589-2591. https://doi.org/10.1063/1.108136

Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks. / Kalish, R.; Kramer, L. Y.; Law, K. K.; Merz, J. L.; Feldman, Leonard C; Jacobson, D. C.; Weir, B. E.

In: Applied Physics Letters, Vol. 61, No. 21, 1992, p. 2589-2591.

Research output: Contribution to journalArticle

Kalish, R, Kramer, LY, Law, KK, Merz, JL, Feldman, LC, Jacobson, DC & Weir, BE 1992, 'Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks', Applied Physics Letters, vol. 61, no. 21, pp. 2589-2591. https://doi.org/10.1063/1.108136
Kalish, R. ; Kramer, L. Y. ; Law, K. K. ; Merz, J. L. ; Feldman, Leonard C ; Jacobson, D. C. ; Weir, B. E. / Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks. In: Applied Physics Letters. 1992 ; Vol. 61, No. 21. pp. 2589-2591.
@article{9553b27fe4a84088b44d19d2b0e98d76,
title = "Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks",
abstract = "The intermixing of GaAs/AlGaAs quantum wells due to the passage of single energetic heavy ions (8 MeV Bi) is deduced from photoluminescence measurements after rapid thermal annealing (900°C, 4 min). It is found that while the structural damage radius around an ion track due to pure kinematic mixing is very small (1.0-3.0 nm), thermal annealing increases this mixing radius by more than an order of magnitude (to ∼20 nm). This finding has important implications for ion-beam definition of quantum dots or wires in quantum well structures. Our results also clarify the proposed explanation of particle channeling as the cause of ion induced mixing far in excess of the amorphous range.",
author = "R. Kalish and Kramer, {L. Y.} and Law, {K. K.} and Merz, {J. L.} and Feldman, {Leonard C} and Jacobson, {D. C.} and Weir, {B. E.}",
year = "1992",
doi = "10.1063/1.108136",
language = "English",
volume = "61",
pages = "2589--2591",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "21",

}

TY - JOUR

T1 - Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks

AU - Kalish, R.

AU - Kramer, L. Y.

AU - Law, K. K.

AU - Merz, J. L.

AU - Feldman, Leonard C

AU - Jacobson, D. C.

AU - Weir, B. E.

PY - 1992

Y1 - 1992

N2 - The intermixing of GaAs/AlGaAs quantum wells due to the passage of single energetic heavy ions (8 MeV Bi) is deduced from photoluminescence measurements after rapid thermal annealing (900°C, 4 min). It is found that while the structural damage radius around an ion track due to pure kinematic mixing is very small (1.0-3.0 nm), thermal annealing increases this mixing radius by more than an order of magnitude (to ∼20 nm). This finding has important implications for ion-beam definition of quantum dots or wires in quantum well structures. Our results also clarify the proposed explanation of particle channeling as the cause of ion induced mixing far in excess of the amorphous range.

AB - The intermixing of GaAs/AlGaAs quantum wells due to the passage of single energetic heavy ions (8 MeV Bi) is deduced from photoluminescence measurements after rapid thermal annealing (900°C, 4 min). It is found that while the structural damage radius around an ion track due to pure kinematic mixing is very small (1.0-3.0 nm), thermal annealing increases this mixing radius by more than an order of magnitude (to ∼20 nm). This finding has important implications for ion-beam definition of quantum dots or wires in quantum well structures. Our results also clarify the proposed explanation of particle channeling as the cause of ion induced mixing far in excess of the amorphous range.

UR - http://www.scopus.com/inward/record.url?scp=0642300840&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0642300840&partnerID=8YFLogxK

U2 - 10.1063/1.108136

DO - 10.1063/1.108136

M3 - Article

AN - SCOPUS:0642300840

VL - 61

SP - 2589

EP - 2591

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

ER -