Local photocurrent mapping as a probe of contact effects and charge carrier transport in semiconductor nanowire devices

Y. Gu, J. P. Romankiewicz, J. K. David, J. L. Lensch, L. J. Lauhon, E. S. Kwak, Teri W Odom

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Three types of two-terminal CdS nanowire devices with distinct current versus voltage characteristics were fabricated by forming Schottky and/or Ohmic contacts in a controlled manner. Argon ion bombardment, of CdS nanowires increased the carrier concentration allowing the formation of Ohmic Ti-CdS contacts. Scanning photocurrent microscopy (SPCM) was used to explore the influence of the contacts on the spatially resolved photoresponse in two-terminal devices and to analyze charge carrier transport, processes. Modeling of the spatial profiles of the local photocurrent images enabled the quantitative extraction of electron and hole mobility-lifetime products in Ohmic devices and the hole mobility-lifetime product, in Schottky devices. Analysis of the evolution of SPCM images with bias suggests that the electric field is localized to the optical generation region in the Ohmic devices and localized beneath the contacts in the Schottky devices.

Original languageEnglish
Pages (from-to)2172-2177
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number4
DOIs
Publication statusPublished - Jul 2006

Fingerprint

Carrier transport
Charge carriers
Photocurrents
Nanowires
photocurrents
charge carriers
Hole mobility
nanowires
Semiconductor materials
probes
Microscopic examination
Scanning
Ohmic contacts
Electron mobility
hole mobility
Current voltage characteristics
Ion bombardment
Carrier concentration
Argon
Electric fields

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Local photocurrent mapping as a probe of contact effects and charge carrier transport in semiconductor nanowire devices. / Gu, Y.; Romankiewicz, J. P.; David, J. K.; Lensch, J. L.; Lauhon, L. J.; Kwak, E. S.; Odom, Teri W.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 24, No. 4, 07.2006, p. 2172-2177.

Research output: Contribution to journalArticle

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