Low-frequency electronic noise in single-layer MoS2 transistors

Vinod K. Sangwan, Heather N. Arnold, Deep Jariwala, Tobin J Marks, Lincoln J. Lauhon, Mark C Hersam

Research output: Contribution to journalArticle

146 Citations (Scopus)

Abstract

Ubiquitous low-frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low-frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.005 and 2.0 in vacuum (-5 Torr). The field-effect mobility decreased, and the noise amplitude increased by an order of magnitude in ambient conditions, revealing the significant influence of atmospheric adsorbates on charge transport. In addition, single Lorentzian generation-recombination noise was observed to increase by an order of magnitude as the devices were cooled from 300 to 6.5 K.

Original languageEnglish
Pages (from-to)4351-4355
Number of pages5
JournalNano Letters
Volume13
Issue number9
DOIs
Publication statusPublished - Sep 11 2013

Fingerprint

Adsorbates
Field effect transistors
Transition metals
Noise
Charge transfer
Transistors
transistors
Vacuum
low frequencies
electronics
Equipment and Supplies
Genetic Recombination
Metals
field effect transistors
transition metals
formulations
vacuum

Keywords

  • 1/ f noise
  • generation-recombination noise
  • Hooge parameter
  • Molybdenum disulfide
  • nanoelectronics
  • transition metal dichalcogenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering
  • Medicine(all)

Cite this

Low-frequency electronic noise in single-layer MoS2 transistors. / Sangwan, Vinod K.; Arnold, Heather N.; Jariwala, Deep; Marks, Tobin J; Lauhon, Lincoln J.; Hersam, Mark C.

In: Nano Letters, Vol. 13, No. 9, 11.09.2013, p. 4351-4355.

Research output: Contribution to journalArticle

Sangwan, VK, Arnold, HN, Jariwala, D, Marks, TJ, Lauhon, LJ & Hersam, MC 2013, 'Low-frequency electronic noise in single-layer MoS2 transistors', Nano Letters, vol. 13, no. 9, pp. 4351-4355. https://doi.org/10.1021/nl402150r
Sangwan, Vinod K. ; Arnold, Heather N. ; Jariwala, Deep ; Marks, Tobin J ; Lauhon, Lincoln J. ; Hersam, Mark C. / Low-frequency electronic noise in single-layer MoS2 transistors. In: Nano Letters. 2013 ; Vol. 13, No. 9. pp. 4351-4355.
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