Low-frequency electronic noise in single-layer MoS2 transistors

Vinod K. Sangwan, Heather N. Arnold, Deep Jariwala, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam

Research output: Contribution to journalArticle

156 Citations (Scopus)

Abstract

Ubiquitous low-frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low-frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.005 and 2.0 in vacuum (<10-5 Torr). The field-effect mobility decreased, and the noise amplitude increased by an order of magnitude in ambient conditions, revealing the significant influence of atmospheric adsorbates on charge transport. In addition, single Lorentzian generation-recombination noise was observed to increase by an order of magnitude as the devices were cooled from 300 to 6.5 K.

Original languageEnglish
Pages (from-to)4351-4355
Number of pages5
JournalNano letters
Volume13
Issue number9
DOIs
Publication statusPublished - Sep 11 2013

Keywords

  • 1/ f noise
  • Hooge parameter
  • Molybdenum disulfide
  • generation-recombination noise
  • nanoelectronics
  • transition metal dichalcogenide

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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