Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics

Sanghyun Ju, Kangho Lee, David B. Janes, Myung Han Yoon, Antonio Facchetti, Tobin J. Marks

Research output: Contribution to journalArticle

145 Citations (Scopus)

Abstract

The development of nanowire transistors enabled by appropriate dielectrics is of great interest for flexible electronic and display applications. In this study, nanowire field-effect transistors (NW-FETs) composed of individual ZnO nanowires are fabricated using a self-assembled superlattice (SAS) as the gate insulator. The 15-nm SAS film used In this study consists of four Interlinked layer-by-layer self-assembled organic monolayers and exhibits excellent insulating properties with a large specific capacitance, 180 nF/cm 2, and a low leakage current density, 1 × 10 -8 A/cm 2. SAS-based ZnO NW-FETs display excellent drain current saturation at V ds = 0.5 V, a threshold voltage (V th) of -0.4 V, a channel mobility of ∼196 cm 2/V s, an on-off current ratio of ∼10 4, and a subthreshold slope of 400 mV/dec. For comparison, ZnO NW-FETs are also fabricated using 70-nm SiO 2 as the gate insulator. Implementation of the SAS gate dielectric reduces the NW-FET operating voltage dramatically with more than 1 order of magnitude enhancement of the on-current. These results strongly indicate that SAS-based ZnO NW-FETs are promising candidates for future flexible display and logic technologies.

Original languageEnglish
Pages (from-to)2281-2286
Number of pages6
JournalNano letters
Volume5
Issue number11
DOIs
Publication statusPublished - Nov 1 2005

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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