Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics

Sanghyun Ju, Kangho Lee, David B. Janes, Myung Han Yoon, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

143 Citations (Scopus)

Abstract

The development of nanowire transistors enabled by appropriate dielectrics is of great interest for flexible electronic and display applications. In this study, nanowire field-effect transistors (NW-FETs) composed of individual ZnO nanowires are fabricated using a self-assembled superlattice (SAS) as the gate insulator. The 15-nm SAS film used In this study consists of four Interlinked layer-by-layer self-assembled organic monolayers and exhibits excellent insulating properties with a large specific capacitance, 180 nF/cm 2, and a low leakage current density, 1 × 10 -8 A/cm 2. SAS-based ZnO NW-FETs display excellent drain current saturation at V ds = 0.5 V, a threshold voltage (V th) of -0.4 V, a channel mobility of ∼196 cm 2/V s, an on-off current ratio of ∼10 4, and a subthreshold slope of 400 mV/dec. For comparison, ZnO NW-FETs are also fabricated using 70-nm SiO 2 as the gate insulator. Implementation of the SAS gate dielectric reduces the NW-FET operating voltage dramatically with more than 1 order of magnitude enhancement of the on-current. These results strongly indicate that SAS-based ZnO NW-FETs are promising candidates for future flexible display and logic technologies.

Original languageEnglish
Pages (from-to)2281-2286
Number of pages6
JournalNano Letters
Volume5
Issue number11
DOIs
Publication statusPublished - Nov 2005

Fingerprint

Gates (transistor)
Field effect transistors
Nanowires
nanowires
field effect transistors
Electric potential
electric potential
Flexible displays
insulators
Flexible electronics
Gate dielectrics
Drain current
Threshold voltage
Leakage currents
threshold voltage
logic
Monolayers
Transistors
leakage
Capacitance

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Chemistry (miscellaneous)

Cite this

Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics. / Ju, Sanghyun; Lee, Kangho; Janes, David B.; Yoon, Myung Han; Facchetti, Antonio; Marks, Tobin J.

In: Nano Letters, Vol. 5, No. 11, 11.2005, p. 2281-2286.

Research output: Contribution to journalArticle

Ju, Sanghyun ; Lee, Kangho ; Janes, David B. ; Yoon, Myung Han ; Facchetti, Antonio ; Marks, Tobin J. / Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics. In: Nano Letters. 2005 ; Vol. 5, No. 11. pp. 2281-2286.
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