Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics

Sanghyun Ju, Kangho Lee, David B. Janes, Myung Han Yoon, Antonio Facchetti, Tobin J. Marks

Research output: Contribution to journalArticlepeer-review

145 Citations (Scopus)

Abstract

The development of nanowire transistors enabled by appropriate dielectrics is of great interest for flexible electronic and display applications. In this study, nanowire field-effect transistors (NW-FETs) composed of individual ZnO nanowires are fabricated using a self-assembled superlattice (SAS) as the gate insulator. The 15-nm SAS film used In this study consists of four Interlinked layer-by-layer self-assembled organic monolayers and exhibits excellent insulating properties with a large specific capacitance, 180 nF/cm 2, and a low leakage current density, 1 × 10 -8 A/cm 2. SAS-based ZnO NW-FETs display excellent drain current saturation at V ds = 0.5 V, a threshold voltage (V th) of -0.4 V, a channel mobility of ∼196 cm 2/V s, an on-off current ratio of ∼10 4, and a subthreshold slope of 400 mV/dec. For comparison, ZnO NW-FETs are also fabricated using 70-nm SiO 2 as the gate insulator. Implementation of the SAS gate dielectric reduces the NW-FET operating voltage dramatically with more than 1 order of magnitude enhancement of the on-current. These results strongly indicate that SAS-based ZnO NW-FETs are promising candidates for future flexible display and logic technologies.

Original languageEnglish
Pages (from-to)2281-2286
Number of pages6
JournalNano letters
Volume5
Issue number11
DOIs
Publication statusPublished - Nov 1 2005

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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