Low-Temperature Atomic Layer Deposition of MoS2 Films

Titel Jurca, Michael J. Moody, Alex Henning, Jonathan D. Emery, Binghao Wang, Jeffrey M. Tan, Tracy L. Lohr, Lincoln J. Lauhon, Tobin J. Marks

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

Wet chemical screening reveals the very high reactivity of Mo(NMe2)4 with H2S for the low-temperature synthesis of MoS2. This observation motivated an investigation of Mo(NMe2)4 as a volatile precursor for the atomic layer deposition (ALD) of MoS2 thin films. Herein we report that Mo(NMe2)4 enables MoS2 film growth at record low temperatures—as low as 60 °C. The as-deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift-off patterning for the straightforward fabrication of diverse device structures.

Original languageEnglish
Pages (from-to)4991-4995
Number of pages5
JournalAngewandte Chemie - International Edition
Volume56
Issue number18
DOIs
Publication statusPublished - Jan 1 2017

Keywords

  • atomic layer deposition
  • low-temperature film growth
  • metal–organic precursors
  • molybdenum disulfide

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)

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    Jurca, T., Moody, M. J., Henning, A., Emery, J. D., Wang, B., Tan, J. M., Lohr, T. L., Lauhon, L. J., & Marks, T. J. (2017). Low-Temperature Atomic Layer Deposition of MoS2 Films. Angewandte Chemie - International Edition, 56(18), 4991-4995. https://doi.org/10.1002/anie.201611838