Low temperature deposition of epitaxial BaTi O3 films in a rotating disk vertical MOCVD reactor

A. M. Dhote, A. L. Meier, D. J. Towner, B. W. Wessels, J. Ni, Tobin J Marks

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Abstract

Epitaxial BaTi O3 thin films were deposited on MgO (100) in a rotating disk vertical metalorganic chemical vapor deposition (MOCVD) reactor at 700 °C. The metalorganic sources used were titanium tetraisopropoxide and the highly volatile fluorinated barium precursor (Ba (hfa)2 ·pentaethyleneglycolethylbutylether (PEB)). To facilitate growth at the lower temperature while suppressing the formation of Ba F2 impurity phases, a strong oxidant consisting of a mixture of 80% N2 O and 20% O2 was employed. The BaTi O3 films deposited at 700 °C are phase pure and show only BaTiO3 {001} x-ray diffraction peaks. The x-ray rocking curve full width at half maximum (FWHM) of the BaTi O3 (002) peak was 0.82°. The fourfold symmetry and coincident position of the {110} peaks for both the film and substrate confirms in-plane epitaxy of cube-on-cube orientation. The Φ -scan FWHM of the BaTi O3 film is 1.05°. The growth temperature in this work is lower than the temperatures used in most comparable thermal MOCVD epitaxial oxide processes for BaTi O3.

Original languageEnglish
Pages (from-to)1674-1678
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number4
DOIs
Publication statusPublished - 2005

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

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