Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

Myung Gil Kim, Mercouri G. Kanatzidis, Antonio Facchetti, Tobin J. Marks

Research output: Contribution to journalArticle

823 Citations (Scopus)

Abstract

The development of large-area, low-cost electronics for flat-panel displays, sensor arrays, and flexible circuitry depends heavily on high-throughput fabrication processes and a choice of materials with appropriate performance characteristics. For different applications, high charge carrier mobility, high electrical conductivity, large dielectric constants, mechanical flexibility or optical transparency may be required. Although thin films of metal oxides could potentially meet all of these needs, at present they are deposited using slow and equipment-intensive techniques such as sputtering. Recently, solution processing schemes with high throughput have been developed, but these require high annealing temperatures (T anneal >400‰°C), which are incompatible with flexible polymeric substrates. Here we report combustion processing as a new general route to solution growth of diverse electronic metal oxide films (In2O3, a-Zn-O, a-Ing-Zng-ITO) at temperatures as low as 200°C. We show that this method can be implemented to fabricate high-performance, optically transparent transistors on flexible plastic substrates.

Original languageEnglish
Pages (from-to)382-388
Number of pages7
JournalNature materials
Volume10
Issue number5
DOIs
Publication statusPublished - May 2011

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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