Abstract
The development of large-area, low-cost electronics for flat-panel displays, sensor arrays, and flexible circuitry depends heavily on high-throughput fabrication processes and a choice of materials with appropriate performance characteristics. For different applications, high charge carrier mobility, high electrical conductivity, large dielectric constants, mechanical flexibility or optical transparency may be required. Although thin films of metal oxides could potentially meet all of these needs, at present they are deposited using slow and equipment-intensive techniques such as sputtering. Recently, solution processing schemes with high throughput have been developed, but these require high annealing temperatures (T anneal >400‰°C), which are incompatible with flexible polymeric substrates. Here we report combustion processing as a new general route to solution growth of diverse electronic metal oxide films (In2O3, a-Zn-O, a-Ing-Zng-ITO) at temperatures as low as 200°C. We show that this method can be implemented to fabricate high-performance, optically transparent transistors on flexible plastic substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 382-388 |
| Number of pages | 7 |
| Journal | Nature Materials |
| Volume | 10 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - May 2011 |
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ASJC Scopus subject areas
- Mechanical Engineering
- Mechanics of Materials
- Condensed Matter Physics
- Materials Science(all)
- Chemistry(all)
Cite this
Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing. / Kim, Myung Gil; Kanatzidis, Mercouri G; Facchetti, Antonio; Marks, Tobin J.
In: Nature Materials, Vol. 10, No. 5, 05.2011, p. 382-388.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
AU - Kim, Myung Gil
AU - Kanatzidis, Mercouri G
AU - Facchetti, Antonio
AU - Marks, Tobin J
PY - 2011/5
Y1 - 2011/5
N2 - The development of large-area, low-cost electronics for flat-panel displays, sensor arrays, and flexible circuitry depends heavily on high-throughput fabrication processes and a choice of materials with appropriate performance characteristics. For different applications, high charge carrier mobility, high electrical conductivity, large dielectric constants, mechanical flexibility or optical transparency may be required. Although thin films of metal oxides could potentially meet all of these needs, at present they are deposited using slow and equipment-intensive techniques such as sputtering. Recently, solution processing schemes with high throughput have been developed, but these require high annealing temperatures (T anneal >400‰°C), which are incompatible with flexible polymeric substrates. Here we report combustion processing as a new general route to solution growth of diverse electronic metal oxide films (In2O3, a-Zn-O, a-Ing-Zng-ITO) at temperatures as low as 200°C. We show that this method can be implemented to fabricate high-performance, optically transparent transistors on flexible plastic substrates.
AB - The development of large-area, low-cost electronics for flat-panel displays, sensor arrays, and flexible circuitry depends heavily on high-throughput fabrication processes and a choice of materials with appropriate performance characteristics. For different applications, high charge carrier mobility, high electrical conductivity, large dielectric constants, mechanical flexibility or optical transparency may be required. Although thin films of metal oxides could potentially meet all of these needs, at present they are deposited using slow and equipment-intensive techniques such as sputtering. Recently, solution processing schemes with high throughput have been developed, but these require high annealing temperatures (T anneal >400‰°C), which are incompatible with flexible polymeric substrates. Here we report combustion processing as a new general route to solution growth of diverse electronic metal oxide films (In2O3, a-Zn-O, a-Ing-Zng-ITO) at temperatures as low as 200°C. We show that this method can be implemented to fabricate high-performance, optically transparent transistors on flexible plastic substrates.
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U2 - 10.1038/nmat3011
DO - 10.1038/nmat3011
M3 - Article
C2 - 21499311
AN - SCOPUS:79955037663
VL - 10
SP - 382
EP - 388
JO - Nature Materials
JF - Nature Materials
SN - 1476-1122
IS - 5
ER -