Low-temperature homoepitaxy on Si(111)

B. E. Weir, B. S. Freer, R. L. Headrick, D. J. Eaglesham, G. H. Gilmer, J. Bevk, Leonard C Feldman

Research output: Contribution to journalArticle

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Abstract

We have compared ion channeling results with molecular dynamics simulations to investigate low-temperature molecular beam homoepitaxy on silicon. We report the temperature dependence, rate dependence, and thickness dependence of films grown on Si(111). For 350 Å films, a transition to good crystalline quality is seen in ion channeling at growth temperatures of ≊400°C; this is compared to ≊100°C for (100) epitaxy. The evolution of surface microstructure leading to breakdown of epitaxial growth at low temperatures is discussed.

Original languageEnglish
Pages (from-to)204-206
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number2
DOIs
Publication statusPublished - 1991

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epitaxy
molecular beams
ions
breakdown
molecular dynamics
temperature dependence
microstructure
silicon
simulation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Weir, B. E., Freer, B. S., Headrick, R. L., Eaglesham, D. J., Gilmer, G. H., Bevk, J., & Feldman, L. C. (1991). Low-temperature homoepitaxy on Si(111). Applied Physics Letters, 59(2), 204-206. https://doi.org/10.1063/1.105966

Low-temperature homoepitaxy on Si(111). / Weir, B. E.; Freer, B. S.; Headrick, R. L.; Eaglesham, D. J.; Gilmer, G. H.; Bevk, J.; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 59, No. 2, 1991, p. 204-206.

Research output: Contribution to journalArticle

Weir, BE, Freer, BS, Headrick, RL, Eaglesham, DJ, Gilmer, GH, Bevk, J & Feldman, LC 1991, 'Low-temperature homoepitaxy on Si(111)', Applied Physics Letters, vol. 59, no. 2, pp. 204-206. https://doi.org/10.1063/1.105966
Weir BE, Freer BS, Headrick RL, Eaglesham DJ, Gilmer GH, Bevk J et al. Low-temperature homoepitaxy on Si(111). Applied Physics Letters. 1991;59(2):204-206. https://doi.org/10.1063/1.105966
Weir, B. E. ; Freer, B. S. ; Headrick, R. L. ; Eaglesham, D. J. ; Gilmer, G. H. ; Bevk, J. ; Feldman, Leonard C. / Low-temperature homoepitaxy on Si(111). In: Applied Physics Letters. 1991 ; Vol. 59, No. 2. pp. 204-206.
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