Abstract
We have compared ion channeling results with molecular dynamics simulations to investigate low-temperature molecular beam homoepitaxy on silicon. We report the temperature dependence, rate dependence, and thickness dependence of films grown on Si(111). For 350 Å films, a transition to good crystalline quality is seen in ion channeling at growth temperatures of ≊400°C; this is compared to ≊100°C for (100) epitaxy. The evolution of surface microstructure leading to breakdown of epitaxial growth at low temperatures is discussed.
Original language | English |
---|---|
Pages (from-to) | 204-206 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 59 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1991 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)