Low-temperature homoepitaxy on Si(111)

B. E. Weir; B. S. Freer; R. L. Headrick; D. J. Eaglesham; G. H. Gilmer; J. Bevk; L. C. Feldman

doi:10.1063/1.105966

Low-temperature homoepitaxy on Si(111)

B. E. Weir, B. S. Freer, R. L. Headrick, D. J. Eaglesham, G. H. Gilmer, J. Bevk, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

We have compared ion channeling results with molecular dynamics simulations to investigate low-temperature molecular beam homoepitaxy on silicon. We report the temperature dependence, rate dependence, and thickness dependence of films grown on Si(111). For 350 Å films, a transition to good crystalline quality is seen in ion channeling at growth temperatures of ≊400°C; this is compared to ≊100°C for (100) epitaxy. The evolution of surface microstructure leading to breakdown of epitaxial growth at low temperatures is discussed.

Original language	English
Pages (from-to)	204-206
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	2
DOIs	https://doi.org/10.1063/1.105966
Publication status	Published - 1991

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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AU - Weir, B. E.

AU - Freer, B. S.

AU - Headrick, R. L.

AU - Eaglesham, D. J.

AU - Gilmer, G. H.

AU - Bevk, J.

AU - Feldman, L. C.

PY - 1991

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AB - We have compared ion channeling results with molecular dynamics simulations to investigate low-temperature molecular beam homoepitaxy on silicon. We report the temperature dependence, rate dependence, and thickness dependence of films grown on Si(111). For 350 Å films, a transition to good crystalline quality is seen in ion channeling at growth temperatures of ≊400°C; this is compared to ≊100°C for (100) epitaxy. The evolution of surface microstructure leading to breakdown of epitaxial growth at low temperatures is discussed.

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Low-temperature homoepitaxy on Si(111)

Abstract

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