Low-temperature homoepitaxy on Si(111)

B. E. Weir, B. S. Freer, R. L. Headrick, D. J. Eaglesham, G. H. Gilmer, J. Bevk, Leonard C Feldman

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We have compared ion channeling results with molecular dynamics simulations to investigate low-temperature molecular beam homoepitaxy on silicon. We report the temperature dependence, rate dependence, and thickness dependence of films grown on Si(111). For 350 Å films, a transition to good crystalline quality is seen in ion channeling at growth temperatures of ≊400°C; this is compared to ≊100°C for (100) epitaxy. The evolution of surface microstructure leading to breakdown of epitaxial growth at low temperatures is discussed.

Original languageEnglish
Pages (from-to)204-206
Number of pages3
JournalApplied Physics Letters
Issue number2
Publication statusPublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Weir, B. E., Freer, B. S., Headrick, R. L., Eaglesham, D. J., Gilmer, G. H., Bevk, J., & Feldman, L. C. (1991). Low-temperature homoepitaxy on Si(111). Applied Physics Letters, 59(2), 204-206. https://doi.org/10.1063/1.105966