Low-temperature homoepitaxy on Si(111)

B. E. Weir, B. S. Freer, R. L. Headrick, D. J. Eaglesham, G. H. Gilmer, J. Bevk, Leonard C Feldman

Research output: Contribution to journal › Article

52 Citations (Scopus)

Abstract

We have compared ion channeling results with molecular dynamics simulations to investigate low-temperature molecular beam homoepitaxy on silicon. We report the temperature dependence, rate dependence, and thickness dependence of films grown on Si(111). For 350 Å films, a transition to good crystalline quality is seen in ion channeling at growth temperatures of ≊400°C; this is compared to ≊100°C for (100) epitaxy. The evolution of surface microstructure leading to breakdown of epitaxial growth at low temperatures is discussed.

Original languageEnglish
Pages (from-to)204-206
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number2
DOIs
Publication statusPublished - 1991

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epitaxy
molecular beams
ions
breakdown
molecular dynamics
temperature dependence
microstructure
silicon
simulation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Weir, B. E., Freer, B. S., Headrick, R. L., Eaglesham, D. J., Gilmer, G. H., Bevk, J., & Feldman, L. C. (1991). Low-temperature homoepitaxy on Si(111). Applied Physics Letters, 59(2), 204-206. https://doi.org/10.1063/1.105966

Low-temperature homoepitaxy on Si(111). / Weir, B. E.; Freer, B. S.; Headrick, R. L.; Eaglesham, D. J.; Gilmer, G. H.; Bevk, J.; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 59, No. 2, 1991, p. 204-206.

Research output: Contribution to journal › Article

Weir, BE, Freer, BS, Headrick, RL, Eaglesham, DJ, Gilmer, GH, Bevk, J & Feldman, LC 1991, 'Low-temperature homoepitaxy on Si(111)', Applied Physics Letters, vol. 59, no. 2, pp. 204-206. https://doi.org/10.1063/1.105966
Weir BE, Freer BS, Headrick RL, Eaglesham DJ, Gilmer GH, Bevk J et al. Low-temperature homoepitaxy on Si(111). Applied Physics Letters. 1991;59(2):204-206. https://doi.org/10.1063/1.105966
Weir, B. E. ; Freer, B. S. ; Headrick, R. L. ; Eaglesham, D. J. ; Gilmer, G. H. ; Bevk, J. ; Feldman, Leonard C. / Low-temperature homoepitaxy on Si(111). In: Applied Physics Letters. 1991 ; Vol. 59, No. 2. pp. 204-206.
@article{8aa9b27526634298839d9e8bb660b6f1,
title = "Low-temperature homoepitaxy on Si(111)",
abstract = "We have compared ion channeling results with molecular dynamics simulations to investigate low-temperature molecular beam homoepitaxy on silicon. We report the temperature dependence, rate dependence, and thickness dependence of films grown on Si(111). For 350 {\AA} films, a transition to good crystalline quality is seen in ion channeling at growth temperatures of ≊400°C; this is compared to ≊100°C for (100) epitaxy. The evolution of surface microstructure leading to breakdown of epitaxial growth at low temperatures is discussed.",
author = "Weir, {B. E.} and Freer, {B. S.} and Headrick, {R. L.} and Eaglesham, {D. J.} and Gilmer, {G. H.} and J. Bevk and Feldman, {Leonard C}",
year = "1991",
doi = "10.1063/1.105966",
language = "English",
volume = "59",
pages = "204--206",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Low-temperature homoepitaxy on Si(111)

AU - Weir, B. E.

AU - Freer, B. S.

AU - Headrick, R. L.

AU - Eaglesham, D. J.

AU - Gilmer, G. H.

AU - Bevk, J.

AU - Feldman, Leonard C

PY - 1991

Y1 - 1991

N2 - We have compared ion channeling results with molecular dynamics simulations to investigate low-temperature molecular beam homoepitaxy on silicon. We report the temperature dependence, rate dependence, and thickness dependence of films grown on Si(111). For 350 Å films, a transition to good crystalline quality is seen in ion channeling at growth temperatures of ≊400°C; this is compared to ≊100°C for (100) epitaxy. The evolution of surface microstructure leading to breakdown of epitaxial growth at low temperatures is discussed.

AB - We have compared ion channeling results with molecular dynamics simulations to investigate low-temperature molecular beam homoepitaxy on silicon. We report the temperature dependence, rate dependence, and thickness dependence of films grown on Si(111). For 350 Å films, a transition to good crystalline quality is seen in ion channeling at growth temperatures of ≊400°C; this is compared to ≊100°C for (100) epitaxy. The evolution of surface microstructure leading to breakdown of epitaxial growth at low temperatures is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0001680952&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001680952&partnerID=8YFLogxK

U2 - 10.1063/1.105966

DO - 10.1063/1.105966

M3 - Article

AN - SCOPUS:0001680952

VL - 59

SP - 204

EP - 206

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

ER -

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