Low temperature solution-phase deposition of SnS thin films

Priscilla D. Antunez; Daniel A. Torelli; Fan Yang; Federico A. Rabuffetti; Nathan S. Lewis; Richard L. Brutchey

doi:10.1021/cm503124u

Low temperature solution-phase deposition of SnS thin films

Priscilla D. Antunez, Daniel A. Torelli, Fan Yang, Federico A. Rabuffetti, Nathan S. Lewis, Richard L. Brutchey

California Institute of Technology

Research output: Contribution to journal › Article › peer-review

68 Citations (Scopus)

Abstract

A study was conducted to demonstrate low-temperature solution-phase deposition of monosulfide (SnS) thin films. Thermogravimetric analysis (TGA) was used to determine the temperature needed to recover SnS from the en/edt solution. A multistep mass loss of ca. 50 wt % was observed that is consistent with the loss of organic species originating from the solvent mixture, with an end point of decomposition measured at 350 °C. FT-IR spectroscopy confirmed the loss of organic species after mild heating of the dried SnS ink to 350 °C under flowing N₂(g) .

Original language	English
Pages (from-to)	5444-5446
Number of pages	3
Journal	Chemistry of Materials
Volume	26
Issue number	19
DOIs	https://doi.org/10.1021/cm503124u
Publication status	Published - 2014

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)
Materials Chemistry

Access to Document

10.1021/cm503124u

Fingerprint Dive into the research topics of 'Low temperature solution-phase deposition of SnS thin films'. Together they form a unique fingerprint.

Cite this

@article{3b404b34e1654bebb60b0652ad890d2c,

title = "Low temperature solution-phase deposition of SnS thin films",

abstract = "A study was conducted to demonstrate low-temperature solution-phase deposition of monosulfide (SnS) thin films. Thermogravimetric analysis (TGA) was used to determine the temperature needed to recover SnS from the en/edt solution. A multistep mass loss of ca. 50 wt % was observed that is consistent with the loss of organic species originating from the solvent mixture, with an end point of decomposition measured at 350 °C. FT-IR spectroscopy confirmed the loss of organic species after mild heating of the dried SnS ink to 350 °C under flowing N2(g) .",

author = "Antunez, {Priscilla D.} and Torelli, {Daniel A.} and Fan Yang and Rabuffetti, {Federico A.} and Lewis, {Nathan S.} and Brutchey, {Richard L.}",

year = "2014",

doi = "10.1021/cm503124u",

language = "English",

volume = "26",

pages = "5444--5446",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

number = "19",

}

TY - JOUR

T1 - Low temperature solution-phase deposition of SnS thin films

AU - Antunez, Priscilla D.

AU - Torelli, Daniel A.

AU - Yang, Fan

AU - Rabuffetti, Federico A.

AU - Lewis, Nathan S.

AU - Brutchey, Richard L.

PY - 2014

Y1 - 2014

N2 - A study was conducted to demonstrate low-temperature solution-phase deposition of monosulfide (SnS) thin films. Thermogravimetric analysis (TGA) was used to determine the temperature needed to recover SnS from the en/edt solution. A multistep mass loss of ca. 50 wt % was observed that is consistent with the loss of organic species originating from the solvent mixture, with an end point of decomposition measured at 350 °C. FT-IR spectroscopy confirmed the loss of organic species after mild heating of the dried SnS ink to 350 °C under flowing N2(g) .

AB - A study was conducted to demonstrate low-temperature solution-phase deposition of monosulfide (SnS) thin films. Thermogravimetric analysis (TGA) was used to determine the temperature needed to recover SnS from the en/edt solution. A multistep mass loss of ca. 50 wt % was observed that is consistent with the loss of organic species originating from the solvent mixture, with an end point of decomposition measured at 350 °C. FT-IR spectroscopy confirmed the loss of organic species after mild heating of the dried SnS ink to 350 °C under flowing N2(g) .

UR - http://www.scopus.com/inward/record.url?scp=84919734931&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84919734931&partnerID=8YFLogxK

U2 - 10.1021/cm503124u

DO - 10.1021/cm503124u

M3 - Article

AN - SCOPUS:84919734931

VL - 26

SP - 5444

EP - 5446

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 19

ER -