Low-temperature solution-processed amorphous indium tin oxide field-effect transistors

Sung Kim Hyun; Myung Gil Kim; Young Geun Ha; Mercouri G. Kanatzidis; Tobin J. Marks; Antonio Facchetti

doi:10.1021/ja903886r

Low-temperature solution-processed amorphous indium tin oxide field-effect transistors

Sung Kim Hyun, Myung Gil Kim, Young Geun Ha, Mercouri G. Kanatzidis, Tobin J. Marks, Antonio Facchetti

Northwestern University

Research output: Contribution to journal › Article

56 Citations (Scopus)

Abstract

(Graph Presented) Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were fabricated on various dielectrics [SiO₂ and self-assembled nanodielectrics (SANDs)] by spin-coating an ITO film precursor solution consisting of InCl₃ and SnCl₄ as the sources of In³⁺ and Sn⁴⁺, respectively, methoxyethanol (solvent), and ethanolamine (base). These films can be annealed at temperatures T_a < 250°C and afford devices with excellent electrical characteristics. The optimized [In³⁺]/[In³⁺ + Sn⁴⁺] molar ratio (0.7) and annealing temperature (T_a = 250°C) afford TFTs exhibiting electron mobilities of ∼2 and ∼10-20 cm² V ^-1 s^-1 with SiO₂ and SAND, respectively, as the gate dielectric. Remarkably, ITO TFTs processed at 220°C still exhibit electron mobilities of >0.2 cm² V^-1 s^-1, which is encouraging for processing on plastic substrates.

Original language	English
Pages (from-to)	10826-10827
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	131
Issue number	31
DOIs	https://doi.org/10.1021/ja903886r
Publication status	Published - Aug 12 2009

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ASJC Scopus subject areas

Catalysis
Chemistry(all)
Biochemistry
Colloid and Surface Chemistry

Cite this

Hyun, S. K., Kim, M. G., Ha, Y. G., Kanatzidis, M. G., Marks, T. J., & Facchetti, A. (2009). Low-temperature solution-processed amorphous indium tin oxide field-effect transistors. Journal of the American Chemical Society, 131(31), 10826-10827. https://doi.org/10.1021/ja903886r

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abstract = "(Graph Presented) Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2 and self-assembled nanodielectrics (SANDs)] by spin-coating an ITO film precursor solution consisting of InCl3 and SnCl4 as the sources of In3+ and Sn4+, respectively, methoxyethanol (solvent), and ethanolamine (base). These films can be annealed at temperatures Ta < 250°C and afford devices with excellent electrical characteristics. The optimized [In3+]/[In3+ + Sn4+] molar ratio (0.7) and annealing temperature (Ta = 250°C) afford TFTs exhibiting electron mobilities of ∼2 and ∼10-20 cm2 V -1 s-1 with SiO2 and SAND, respectively, as the gate dielectric. Remarkably, ITO TFTs processed at 220°C still exhibit electron mobilities of >0.2 cm2 V-1 s-1, which is encouraging for processing on plastic substrates.",

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AU - Hyun, Sung Kim

AU - Kim, Myung Gil

AU - Ha, Young Geun

AU - Kanatzidis, Mercouri G.

AU - Marks, Tobin J.

AU - Facchetti, Antonio

PY - 2009/8/12

Y1 - 2009/8/12

N2 - (Graph Presented) Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2 and self-assembled nanodielectrics (SANDs)] by spin-coating an ITO film precursor solution consisting of InCl3 and SnCl4 as the sources of In3+ and Sn4+, respectively, methoxyethanol (solvent), and ethanolamine (base). These films can be annealed at temperatures Ta < 250°C and afford devices with excellent electrical characteristics. The optimized [In3+]/[In3+ + Sn4+] molar ratio (0.7) and annealing temperature (Ta = 250°C) afford TFTs exhibiting electron mobilities of ∼2 and ∼10-20 cm2 V -1 s-1 with SiO2 and SAND, respectively, as the gate dielectric. Remarkably, ITO TFTs processed at 220°C still exhibit electron mobilities of >0.2 cm2 V-1 s-1, which is encouraging for processing on plastic substrates.

AB - (Graph Presented) Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2 and self-assembled nanodielectrics (SANDs)] by spin-coating an ITO film precursor solution consisting of InCl3 and SnCl4 as the sources of In3+ and Sn4+, respectively, methoxyethanol (solvent), and ethanolamine (base). These films can be annealed at temperatures Ta < 250°C and afford devices with excellent electrical characteristics. The optimized [In3+]/[In3+ + Sn4+] molar ratio (0.7) and annealing temperature (Ta = 250°C) afford TFTs exhibiting electron mobilities of ∼2 and ∼10-20 cm2 V -1 s-1 with SiO2 and SAND, respectively, as the gate dielectric. Remarkably, ITO TFTs processed at 220°C still exhibit electron mobilities of >0.2 cm2 V-1 s-1, which is encouraging for processing on plastic substrates.

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10.1021/ja903886r