Low-temperature solution-processed amorphous indium tin oxide field-effect transistors

Sung Kim Hyun, Myung Gil Kim, Young Geun Ha, Mercouri G Kanatzidis, Tobin J Marks, Antonio Facchetti

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

(Graph Presented) Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2 and self-assembled nanodielectrics (SANDs)] by spin-coating an ITO film precursor solution consisting of InCl3 and SnCl4 as the sources of In3+ and Sn4+, respectively, methoxyethanol (solvent), and ethanolamine (base). These films can be annealed at temperatures Ta <250°C and afford devices with excellent electrical characteristics. The optimized [In3+]/[In3+ + Sn4+] molar ratio (0.7) and annealing temperature (Ta = 250°C) afford TFTs exhibiting electron mobilities of ∼2 and ∼10-20 cm2 V -1 s-1 with SiO2 and SAND, respectively, as the gate dielectric. Remarkably, ITO TFTs processed at 220°C still exhibit electron mobilities of >0.2 cm2 V-1 s-1, which is encouraging for processing on plastic substrates.

Original languageEnglish
Pages (from-to)10826-10827
Number of pages2
JournalJournal of the American Chemical Society
Volume131
Issue number31
DOIs
Publication statusPublished - Aug 12 2009

Fingerprint

Field effect transistors
Tin oxides
Indium
Ethanolamines
Ethanolamine
Temperature
Spin coating
Thin film transistors
Plastics
Oxide films
Substrates
Processing
indium tin oxide
stannic chloride

ASJC Scopus subject areas

  • Chemistry(all)
  • Catalysis
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Low-temperature solution-processed amorphous indium tin oxide field-effect transistors. / Hyun, Sung Kim; Kim, Myung Gil; Ha, Young Geun; Kanatzidis, Mercouri G; Marks, Tobin J; Facchetti, Antonio.

In: Journal of the American Chemical Society, Vol. 131, No. 31, 12.08.2009, p. 10826-10827.

Research output: Contribution to journalArticle

Hyun, Sung Kim ; Kim, Myung Gil ; Ha, Young Geun ; Kanatzidis, Mercouri G ; Marks, Tobin J ; Facchetti, Antonio. / Low-temperature solution-processed amorphous indium tin oxide field-effect transistors. In: Journal of the American Chemical Society. 2009 ; Vol. 131, No. 31. pp. 10826-10827.
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AU - Facchetti, Antonio

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AB - (Graph Presented) Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2 and self-assembled nanodielectrics (SANDs)] by spin-coating an ITO film precursor solution consisting of InCl3 and SnCl4 as the sources of In3+ and Sn4+, respectively, methoxyethanol (solvent), and ethanolamine (base). These films can be annealed at temperatures Ta <250°C and afford devices with excellent electrical characteristics. The optimized [In3+]/[In3+ + Sn4+] molar ratio (0.7) and annealing temperature (Ta = 250°C) afford TFTs exhibiting electron mobilities of ∼2 and ∼10-20 cm2 V -1 s-1 with SiO2 and SAND, respectively, as the gate dielectric. Remarkably, ITO TFTs processed at 220°C still exhibit electron mobilities of >0.2 cm2 V-1 s-1, which is encouraging for processing on plastic substrates.

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