Abstract
(Graph Presented) Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2 and self-assembled nanodielectrics (SANDs)] by spin-coating an ITO film precursor solution consisting of InCl3 and SnCl4 as the sources of In3+ and Sn4+, respectively, methoxyethanol (solvent), and ethanolamine (base). These films can be annealed at temperatures Ta <250°C and afford devices with excellent electrical characteristics. The optimized [In3+]/[In3+ + Sn4+] molar ratio (0.7) and annealing temperature (Ta = 250°C) afford TFTs exhibiting electron mobilities of ∼2 and ∼10-20 cm2 V -1 s-1 with SiO2 and SAND, respectively, as the gate dielectric. Remarkably, ITO TFTs processed at 220°C still exhibit electron mobilities of >0.2 cm2 V-1 s-1, which is encouraging for processing on plastic substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 10826-10827 |
| Number of pages | 2 |
| Journal | Journal of the American Chemical Society |
| Volume | 131 |
| Issue number | 31 |
| DOIs | |
| Publication status | Published - Aug 12 2009 |
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ASJC Scopus subject areas
- Chemistry(all)
- Catalysis
- Biochemistry
- Colloid and Surface Chemistry
Cite this
Low-temperature solution-processed amorphous indium tin oxide field-effect transistors. / Hyun, Sung Kim; Kim, Myung Gil; Ha, Young Geun; Kanatzidis, Mercouri G; Marks, Tobin J; Facchetti, Antonio.
In: Journal of the American Chemical Society, Vol. 131, No. 31, 12.08.2009, p. 10826-10827.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low-temperature solution-processed amorphous indium tin oxide field-effect transistors
AU - Hyun, Sung Kim
AU - Kim, Myung Gil
AU - Ha, Young Geun
AU - Kanatzidis, Mercouri G
AU - Marks, Tobin J
AU - Facchetti, Antonio
PY - 2009/8/12
Y1 - 2009/8/12
N2 - (Graph Presented) Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2 and self-assembled nanodielectrics (SANDs)] by spin-coating an ITO film precursor solution consisting of InCl3 and SnCl4 as the sources of In3+ and Sn4+, respectively, methoxyethanol (solvent), and ethanolamine (base). These films can be annealed at temperatures Ta <250°C and afford devices with excellent electrical characteristics. The optimized [In3+]/[In3+ + Sn4+] molar ratio (0.7) and annealing temperature (Ta = 250°C) afford TFTs exhibiting electron mobilities of ∼2 and ∼10-20 cm2 V -1 s-1 with SiO2 and SAND, respectively, as the gate dielectric. Remarkably, ITO TFTs processed at 220°C still exhibit electron mobilities of >0.2 cm2 V-1 s-1, which is encouraging for processing on plastic substrates.
AB - (Graph Presented) Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2 and self-assembled nanodielectrics (SANDs)] by spin-coating an ITO film precursor solution consisting of InCl3 and SnCl4 as the sources of In3+ and Sn4+, respectively, methoxyethanol (solvent), and ethanolamine (base). These films can be annealed at temperatures Ta <250°C and afford devices with excellent electrical characteristics. The optimized [In3+]/[In3+ + Sn4+] molar ratio (0.7) and annealing temperature (Ta = 250°C) afford TFTs exhibiting electron mobilities of ∼2 and ∼10-20 cm2 V -1 s-1 with SiO2 and SAND, respectively, as the gate dielectric. Remarkably, ITO TFTs processed at 220°C still exhibit electron mobilities of >0.2 cm2 V-1 s-1, which is encouraging for processing on plastic substrates.
UR - http://www.scopus.com/inward/record.url?scp=68249152001&partnerID=8YFLogxK
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U2 - 10.1021/ja903886r
DO - 10.1021/ja903886r
M3 - Article
VL - 131
SP - 10826
EP - 10827
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 31
ER -