Abstract
Capacitive coupling between an overlying ion gel electrolyte and an underlying oxide thin film is utilized to substantially suppress the operating voltage of field-effect transistors (FETs) based on two-dimensional (2D) transition metal dichalcogenides and black phosphorus. The coupling of the layers is achieved following device fabrication by laminating an ion gel layer over an oxide-gated 2D FET through solution-casting methods. While the original pristine 2D FET requires tens of volts for gating through the oxide layer, the laminated ion gel layer reduces the operating voltage to below 4 V even when the same underlying substrate is used as the back gate electrode. Moreover, this capacitive coupling approach allows low-voltage operation without compromising the off-current level, which often occurs when ion gel electrolytes are directly employed as the gate dielectric material. This approach can likely be generalized to a wide variety of thin-film FETs as a postfabrication method for reducing operating voltages and power consumption.
| Original language | English |
|---|---|
| Pages (from-to) | 4008-4013 |
| Number of pages | 6 |
| Journal | Chemistry of Materials |
| Volume | 29 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - May 9 2017 |
Fingerprint
ASJC Scopus subject areas
- Chemistry(all)
- Chemical Engineering(all)
- Materials Chemistry
Cite this
Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling. / Choi, Yongsuk; Kang, Junmo; Jariwala, Deep; Wells, Spencer A.; Kang, Moon Sung; Marks, Tobin J; Hersam, Mark C; Cho, Jeong Ho.
In: Chemistry of Materials, Vol. 29, No. 9, 09.05.2017, p. 4008-4013.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling
AU - Choi, Yongsuk
AU - Kang, Junmo
AU - Jariwala, Deep
AU - Wells, Spencer A.
AU - Kang, Moon Sung
AU - Marks, Tobin J
AU - Hersam, Mark C
AU - Cho, Jeong Ho
PY - 2017/5/9
Y1 - 2017/5/9
N2 - Capacitive coupling between an overlying ion gel electrolyte and an underlying oxide thin film is utilized to substantially suppress the operating voltage of field-effect transistors (FETs) based on two-dimensional (2D) transition metal dichalcogenides and black phosphorus. The coupling of the layers is achieved following device fabrication by laminating an ion gel layer over an oxide-gated 2D FET through solution-casting methods. While the original pristine 2D FET requires tens of volts for gating through the oxide layer, the laminated ion gel layer reduces the operating voltage to below 4 V even when the same underlying substrate is used as the back gate electrode. Moreover, this capacitive coupling approach allows low-voltage operation without compromising the off-current level, which often occurs when ion gel electrolytes are directly employed as the gate dielectric material. This approach can likely be generalized to a wide variety of thin-film FETs as a postfabrication method for reducing operating voltages and power consumption.
AB - Capacitive coupling between an overlying ion gel electrolyte and an underlying oxide thin film is utilized to substantially suppress the operating voltage of field-effect transistors (FETs) based on two-dimensional (2D) transition metal dichalcogenides and black phosphorus. The coupling of the layers is achieved following device fabrication by laminating an ion gel layer over an oxide-gated 2D FET through solution-casting methods. While the original pristine 2D FET requires tens of volts for gating through the oxide layer, the laminated ion gel layer reduces the operating voltage to below 4 V even when the same underlying substrate is used as the back gate electrode. Moreover, this capacitive coupling approach allows low-voltage operation without compromising the off-current level, which often occurs when ion gel electrolytes are directly employed as the gate dielectric material. This approach can likely be generalized to a wide variety of thin-film FETs as a postfabrication method for reducing operating voltages and power consumption.
UR - http://www.scopus.com/inward/record.url?scp=85019066596&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85019066596&partnerID=8YFLogxK
U2 - 10.1021/acs.chemmater.7b00573
DO - 10.1021/acs.chemmater.7b00573
M3 - Article
AN - SCOPUS:85019066596
VL - 29
SP - 4008
EP - 4013
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 9
ER -