Low-voltage graphene transistors based on self-assembled monolayer nanodielectrics

Cecilia Mattevi, Florian Colléaux, Hokwon Kim, Manish Chhowalla, Thomas D. Anthopoulos

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We demonstrate low operating voltage (<|1.5|V) chemical vapour deposited (CVD) graphene transistors using solution processable organic self-assembled monolayers (SAMs) as nanodielectrics. The transistors show weak extrinsic doping, hysteresis-free operation, low gate-leakage current and good operating stability with bias-stress free characteristics. Most importantly we demonstrate that the Dirac potential can be finely tuned by modifying the molecular end-group of the SAMs without compromising the electrical characteristics of the transistors.

Original languageEnglish
Title of host publicationNanocarbon Materials and Devices
Number of pages6
Publication statusPublished - Jan 1 2013
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2012Apr 13 2012

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2012 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Mattevi, C., Colléaux, F., Kim, H., Chhowalla, M., & Anthopoulos, T. D. (2013). Low-voltage graphene transistors based on self-assembled monolayer nanodielectrics. In Nanocarbon Materials and Devices (pp. 179-184). (Materials Research Society Symposium Proceedings; Vol. 1451). https://doi.org/10.1557/opl.2012.1042