Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO₂ gate insulator

High-performance single-walled carbon nanotube (SWCNT) thin-film transistors are fabricated by single-pass inkjet printing of SWCNTs on high-κ solution-processed ZrO₂ gate dielectric. We demonstrate that an ultraviolet ozone treatment of the ZrO₂ substrate is critical in achieving a uniform dispersion of sorted SWCNTs in the semiconducting channel. The resulting devices exhibit excellent performance with mobility and on/off current ratio exceeding 30 cm² V^-1 s^-1 and 10⁵, respectively, at low operating voltages (<5 V). The single-pass inkjet printing process demonstrated in this letter shows great promise as a reliable and scalable method for SWCNT based high performance electronics.