Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO2 gate insulator

Bongjun Kim, Seonpil Jang, Pradyumna L. Prabhumirashi, Michael L. Geier, Mark C. Hersam, Ananth Dodabalapur

Research output: Contribution to journalArticle

36 Citations (Scopus)


High-performance single-walled carbon nanotube (SWCNT) thin-film transistors are fabricated by single-pass inkjet printing of SWCNTs on high-κ solution-processed ZrO2 gate dielectric. We demonstrate that an ultraviolet ozone treatment of the ZrO2 substrate is critical in achieving a uniform dispersion of sorted SWCNTs in the semiconducting channel. The resulting devices exhibit excellent performance with mobility and on/off current ratio exceeding 30 cm2 V-1 s-1 and 105, respectively, at low operating voltages (<5 V). The single-pass inkjet printing process demonstrated in this letter shows great promise as a reliable and scalable method for SWCNT based high performance electronics.

Original languageEnglish
Article number082119
JournalApplied Physics Letters
Issue number8
Publication statusPublished - Aug 19 2013


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this