Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO2 gate insulator

Bongjun Kim, Seonpil Jang, Pradyumna L. Prabhumirashi, Michael L. Geier, Mark C Hersam, Ananth Dodabalapur

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

High-performance single-walled carbon nanotube (SWCNT) thin-film transistors are fabricated by single-pass inkjet printing of SWCNTs on high-κ solution-processed ZrO2 gate dielectric. We demonstrate that an ultraviolet ozone treatment of the ZrO2 substrate is critical in achieving a uniform dispersion of sorted SWCNTs in the semiconducting channel. The resulting devices exhibit excellent performance with mobility and on/off current ratio exceeding 30 cm2 V-1 s-1 and 105, respectively, at low operating voltages (

Original languageEnglish
Article number082119
JournalApplied Physics Letters
Volume103
Issue number8
DOIs
Publication statusPublished - Aug 19 2013

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low voltage
transistors
carbon nanotubes
insulators
printing
ozone
electric potential
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO2 gate insulator. / Kim, Bongjun; Jang, Seonpil; Prabhumirashi, Pradyumna L.; Geier, Michael L.; Hersam, Mark C; Dodabalapur, Ananth.

In: Applied Physics Letters, Vol. 103, No. 8, 082119, 19.08.2013.

Research output: Contribution to journalArticle

Kim, Bongjun ; Jang, Seonpil ; Prabhumirashi, Pradyumna L. ; Geier, Michael L. ; Hersam, Mark C ; Dodabalapur, Ananth. / Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO2 gate insulator. In: Applied Physics Letters. 2013 ; Vol. 103, No. 8.
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