Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO2 gate insulator

Bongjun Kim; Seonpil Jang; Pradyumna L. Prabhumirashi; Michael L. Geier; Mark C Hersam; Ananth Dodabalapur

doi:10.1063/1.4819465

Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO₂ gate insulator

Bongjun Kim, Seonpil Jang, Pradyumna L. Prabhumirashi, Michael L. Geier, Mark C Hersam, Ananth Dodabalapur

Northwestern University

Research output: Contribution to journal › Article

33 Citations (Scopus)

Abstract

High-performance single-walled carbon nanotube (SWCNT) thin-film transistors are fabricated by single-pass inkjet printing of SWCNTs on high-κ solution-processed ZrO₂ gate dielectric. We demonstrate that an ultraviolet ozone treatment of the ZrO₂ substrate is critical in achieving a uniform dispersion of sorted SWCNTs in the semiconducting channel. The resulting devices exhibit excellent performance with mobility and on/off current ratio exceeding 30 cm² V^-1 s^-1 and 10⁵, respectively, at low operating voltages (

Original language	English
Article number	082119
Journal	Applied Physics Letters
Volume	103
Issue number	8
DOIs	https://doi.org/10.1063/1.4819465
Publication status	Published - Aug 19 2013

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low voltage

transistors

carbon nanotubes

insulators

printing

ozone

electric potential

thin films

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Kim, B., Jang, S., Prabhumirashi, P. L., Geier, M. L., Hersam, M. C., & Dodabalapur, A. (2013). Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO₂ gate insulator. Applied Physics Letters, 103(8), [082119]. https://doi.org/10.1063/1.4819465

Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO₂ gate insulator. / Kim, Bongjun; Jang, Seonpil; Prabhumirashi, Pradyumna L.; Geier, Michael L.; Hersam, Mark C; Dodabalapur, Ananth.

In: Applied Physics Letters, Vol. 103, No. 8, 082119, 19.08.2013.

Research output: Contribution to journal › Article

Kim, B, Jang, S, Prabhumirashi, PL, Geier, ML, Hersam, MC & Dodabalapur, A 2013, 'Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO₂ gate insulator', Applied Physics Letters, vol. 103, no. 8, 082119. https://doi.org/10.1063/1.4819465

Kim B, Jang S, Prabhumirashi PL, Geier ML, Hersam MC, Dodabalapur A. Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO₂ gate insulator. Applied Physics Letters. 2013 Aug 19;103(8). 082119. https://doi.org/10.1063/1.4819465

Kim, Bongjun ; Jang, Seonpil ; Prabhumirashi, Pradyumna L. ; Geier, Michael L. ; Hersam, Mark C ; Dodabalapur, Ananth. / Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO₂ gate insulator. In: Applied Physics Letters. 2013 ; Vol. 103, No. 8.

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10.1063/1.4819465