Abstract
High-performance single-walled carbon nanotube (SWCNT) thin-film transistors are fabricated by single-pass inkjet printing of SWCNTs on high-κ solution-processed ZrO2 gate dielectric. We demonstrate that an ultraviolet ozone treatment of the ZrO2 substrate is critical in achieving a uniform dispersion of sorted SWCNTs in the semiconducting channel. The resulting devices exhibit excellent performance with mobility and on/off current ratio exceeding 30 cm2 V-1 s-1 and 105, respectively, at low operating voltages (<5 V). The single-pass inkjet printing process demonstrated in this letter shows great promise as a reliable and scalable method for SWCNT based high performance electronics.
Original language | English |
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Article number | 082119 |
Journal | Applied Physics Letters |
Volume | 103 |
Issue number | 8 |
DOIs | |
Publication status | Published - Aug 19 2013 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)