Low-voltage organic field-effect transistors and inverters enabled by ultrathin cross-linked polymers as gate dielectrics

Myung Han Yoon, He Yan, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

360 Citations (Scopus)

Abstract

The quest for high-performance organic thin-film transistor (OTFT) gate dielectrics is of intense current interest. Beyond having excellent insulating properties, such materials must meet other stringent requirements for optimum OTFT function: efficient low-temperature solution fabrication, mechanical flexibility, and compatibility with diverse gate materials and organic semiconductors. The OTFTs should function at low biases to minimize power consumption, hence the dielectric must exhibit large gate capacitance. We report the realization of new spin-coatable, ultrathin (-8 Acm-2), large capacitances (up to ∼300 nF cm-2), and enabling low-voltage OTFT functions. These dielectrics exhibit good uniformity over areas ∼150 cm2, are insoluble in common solvents, can be patterned using standard microelectronic etching methodologies, and adhere to/are compatible with n+-Si, ITO, and AI gates, and with a wide range of p- and n-type semiconductors. Using these dielectrics, complementary inverters have been fabricated which function at 2V.

Original languageEnglish
Pages (from-to)10388-10395
Number of pages8
JournalJournal of the American Chemical Society
Volume127
Issue number29
DOIs
Publication statusPublished - Jul 27 2005

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Organic field effect transistors
Semiconductors
Gate dielectrics
Polymers
Thin film transistors
Electric potential
Capacitance
Temperature
Semiconducting organic compounds
Microelectronics
Etching
Materials properties
Electric power utilization
Semiconductor materials
Fabrication

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Low-voltage organic field-effect transistors and inverters enabled by ultrathin cross-linked polymers as gate dielectrics. / Yoon, Myung Han; Yan, He; Facchetti, Antonio; Marks, Tobin J.

In: Journal of the American Chemical Society, Vol. 127, No. 29, 27.07.2005, p. 10388-10395.

Research output: Contribution to journalArticle

@article{a709be24d62441e5bc09f04db34a5d96,
title = "Low-voltage organic field-effect transistors and inverters enabled by ultrathin cross-linked polymers as gate dielectrics",
abstract = "The quest for high-performance organic thin-film transistor (OTFT) gate dielectrics is of intense current interest. Beyond having excellent insulating properties, such materials must meet other stringent requirements for optimum OTFT function: efficient low-temperature solution fabrication, mechanical flexibility, and compatibility with diverse gate materials and organic semiconductors. The OTFTs should function at low biases to minimize power consumption, hence the dielectric must exhibit large gate capacitance. We report the realization of new spin-coatable, ultrathin (-8 Acm-2), large capacitances (up to ∼300 nF cm-2), and enabling low-voltage OTFT functions. These dielectrics exhibit good uniformity over areas ∼150 cm2, are insoluble in common solvents, can be patterned using standard microelectronic etching methodologies, and adhere to/are compatible with n+-Si, ITO, and AI gates, and with a wide range of p- and n-type semiconductors. Using these dielectrics, complementary inverters have been fabricated which function at 2V.",
author = "Yoon, {Myung Han} and He Yan and Antonio Facchetti and Marks, {Tobin J}",
year = "2005",
month = "7",
day = "27",
doi = "10.1021/ja052488f",
language = "English",
volume = "127",
pages = "10388--10395",
journal = "Journal of the American Chemical Society",
issn = "0002-7863",
publisher = "American Chemical Society",
number = "29",

}

TY - JOUR

T1 - Low-voltage organic field-effect transistors and inverters enabled by ultrathin cross-linked polymers as gate dielectrics

AU - Yoon, Myung Han

AU - Yan, He

AU - Facchetti, Antonio

AU - Marks, Tobin J

PY - 2005/7/27

Y1 - 2005/7/27

N2 - The quest for high-performance organic thin-film transistor (OTFT) gate dielectrics is of intense current interest. Beyond having excellent insulating properties, such materials must meet other stringent requirements for optimum OTFT function: efficient low-temperature solution fabrication, mechanical flexibility, and compatibility with diverse gate materials and organic semiconductors. The OTFTs should function at low biases to minimize power consumption, hence the dielectric must exhibit large gate capacitance. We report the realization of new spin-coatable, ultrathin (-8 Acm-2), large capacitances (up to ∼300 nF cm-2), and enabling low-voltage OTFT functions. These dielectrics exhibit good uniformity over areas ∼150 cm2, are insoluble in common solvents, can be patterned using standard microelectronic etching methodologies, and adhere to/are compatible with n+-Si, ITO, and AI gates, and with a wide range of p- and n-type semiconductors. Using these dielectrics, complementary inverters have been fabricated which function at 2V.

AB - The quest for high-performance organic thin-film transistor (OTFT) gate dielectrics is of intense current interest. Beyond having excellent insulating properties, such materials must meet other stringent requirements for optimum OTFT function: efficient low-temperature solution fabrication, mechanical flexibility, and compatibility with diverse gate materials and organic semiconductors. The OTFTs should function at low biases to minimize power consumption, hence the dielectric must exhibit large gate capacitance. We report the realization of new spin-coatable, ultrathin (-8 Acm-2), large capacitances (up to ∼300 nF cm-2), and enabling low-voltage OTFT functions. These dielectrics exhibit good uniformity over areas ∼150 cm2, are insoluble in common solvents, can be patterned using standard microelectronic etching methodologies, and adhere to/are compatible with n+-Si, ITO, and AI gates, and with a wide range of p- and n-type semiconductors. Using these dielectrics, complementary inverters have been fabricated which function at 2V.

UR - http://www.scopus.com/inward/record.url?scp=22944446145&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=22944446145&partnerID=8YFLogxK

U2 - 10.1021/ja052488f

DO - 10.1021/ja052488f

M3 - Article

C2 - 16028951

AN - SCOPUS:22944446145

VL - 127

SP - 10388

EP - 10395

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 29

ER -