Magnetic anisotropy in dc diode getter sputtered GdCo films - how important is the argon content in the films

D. D. Bacon; M. Hong; E. M. Gyorgy; P. K. Gallagher; S. Nakahara; Leonard C Feldman

doi:10.1063/1.97020

Magnetic anisotropy in dc diode getter sputtered GdCo films - how important is the argon content in the films

D. D. Bacon, M. Hong, E. M. Gyorgy, P. K. Gallagher, S. Nakahara, Leonard C Feldman

Rutgers University

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

Amorphous magnetic GdCo films were prepared by a dc diode getter sputtering technique with no bias field applied to the substrate during the film growth. Films (type I) obtained using 1.0 kV and 60 mTorr Ar during the sputtering show perpendicular anisotropy with K^eff _u =1.5×10 ⁵ erg/cm³. Films (type II) deposited at 2.0 kV and 28 mTorr Ar exhibit magnetic isotropy with Kⁱⁿ _u≊0. However, the actual argon content in the type II films is three times of that in the type I films. Nevertheless, the argon impurity in both the type I and type II films is ≤1.0 at. %, which is far less than those obtained in the biased rf diode sputtered GdCo films. Also, the distribution of argon is uniform in the film as observed from the Rutherford backscattering spectrometry.

Original language	English
Pages (from-to)	730-732
Number of pages	3
Journal	Applied Physics Letters
Volume	48
Issue number	11
DOIs	https://doi.org/10.1063/1.97020
Publication status	Published - 1986

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Bacon, D. D., Hong, M., Gyorgy, E. M., Gallagher, P. K., Nakahara, S., & Feldman, L. C. (1986). Magnetic anisotropy in dc diode getter sputtered GdCo films - how important is the argon content in the films. Applied Physics Letters, 48(11), 730-732. https://doi.org/10.1063/1.97020

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title = "Magnetic anisotropy in dc diode getter sputtered GdCo films - how important is the argon content in the films",

abstract = "Amorphous magnetic GdCo films were prepared by a dc diode getter sputtering technique with no bias field applied to the substrate during the film growth. Films (type I) obtained using 1.0 kV and 60 mTorr Ar during the sputtering show perpendicular anisotropy with Keff u =1.5×10 5 erg/cm3. Films (type II) deposited at 2.0 kV and 28 mTorr Ar exhibit magnetic isotropy with Kin u≊0. However, the actual argon content in the type II films is three times of that in the type I films. Nevertheless, the argon impurity in both the type I and type II films is ≤1.0 at. %, which is far less than those obtained in the biased rf diode sputtered GdCo films. Also, the distribution of argon is uniform in the film as observed from the Rutherford backscattering spectrometry.",

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AU - Bacon, D. D.

AU - Hong, M.

AU - Gyorgy, E. M.

AU - Gallagher, P. K.

AU - Nakahara, S.

AU - Feldman, Leonard C

PY - 1986

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N2 - Amorphous magnetic GdCo films were prepared by a dc diode getter sputtering technique with no bias field applied to the substrate during the film growth. Films (type I) obtained using 1.0 kV and 60 mTorr Ar during the sputtering show perpendicular anisotropy with Keff u =1.5×10 5 erg/cm3. Films (type II) deposited at 2.0 kV and 28 mTorr Ar exhibit magnetic isotropy with Kin u≊0. However, the actual argon content in the type II films is three times of that in the type I films. Nevertheless, the argon impurity in both the type I and type II films is ≤1.0 at. %, which is far less than those obtained in the biased rf diode sputtered GdCo films. Also, the distribution of argon is uniform in the film as observed from the Rutherford backscattering spectrometry.

AB - Amorphous magnetic GdCo films were prepared by a dc diode getter sputtering technique with no bias field applied to the substrate during the film growth. Films (type I) obtained using 1.0 kV and 60 mTorr Ar during the sputtering show perpendicular anisotropy with Keff u =1.5×10 5 erg/cm3. Films (type II) deposited at 2.0 kV and 28 mTorr Ar exhibit magnetic isotropy with Kin u≊0. However, the actual argon content in the type II films is three times of that in the type I films. Nevertheless, the argon impurity in both the type I and type II films is ≤1.0 at. %, which is far less than those obtained in the biased rf diode sputtered GdCo films. Also, the distribution of argon is uniform in the film as observed from the Rutherford backscattering spectrometry.

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