Abstract
Amorphous magnetic GdCo films were prepared by a dc diode getter sputtering technique with no bias field applied to the substrate during the film growth. Films (type I) obtained using 1.0 kV and 60 mTorr Ar during the sputtering show perpendicular anisotropy with Keff u =1.5×10 5 erg/cm3. Films (type II) deposited at 2.0 kV and 28 mTorr Ar exhibit magnetic isotropy with Kin u≊0. However, the actual argon content in the type II films is three times of that in the type I films. Nevertheless, the argon impurity in both the type I and type II films is ≤1.0 at. %, which is far less than those obtained in the biased rf diode sputtered GdCo films. Also, the distribution of argon is uniform in the film as observed from the Rutherford backscattering spectrometry.
| Original language | English |
|---|---|
| Pages (from-to) | 730-732 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 48 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1986 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Magnetic anisotropy in dc diode getter sputtered GdCo films - how important is the argon content in the films. / Bacon, D. D.; Hong, M.; Gyorgy, E. M.; Gallagher, P. K.; Nakahara, S.; Feldman, Leonard C.
In: Applied Physics Letters, Vol. 48, No. 11, 1986, p. 730-732.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Magnetic anisotropy in dc diode getter sputtered GdCo films - how important is the argon content in the films
AU - Bacon, D. D.
AU - Hong, M.
AU - Gyorgy, E. M.
AU - Gallagher, P. K.
AU - Nakahara, S.
AU - Feldman, Leonard C
PY - 1986
Y1 - 1986
N2 - Amorphous magnetic GdCo films were prepared by a dc diode getter sputtering technique with no bias field applied to the substrate during the film growth. Films (type I) obtained using 1.0 kV and 60 mTorr Ar during the sputtering show perpendicular anisotropy with Keff u =1.5×10 5 erg/cm3. Films (type II) deposited at 2.0 kV and 28 mTorr Ar exhibit magnetic isotropy with Kin u≊0. However, the actual argon content in the type II films is three times of that in the type I films. Nevertheless, the argon impurity in both the type I and type II films is ≤1.0 at. %, which is far less than those obtained in the biased rf diode sputtered GdCo films. Also, the distribution of argon is uniform in the film as observed from the Rutherford backscattering spectrometry.
AB - Amorphous magnetic GdCo films were prepared by a dc diode getter sputtering technique with no bias field applied to the substrate during the film growth. Films (type I) obtained using 1.0 kV and 60 mTorr Ar during the sputtering show perpendicular anisotropy with Keff u =1.5×10 5 erg/cm3. Films (type II) deposited at 2.0 kV and 28 mTorr Ar exhibit magnetic isotropy with Kin u≊0. However, the actual argon content in the type II films is three times of that in the type I films. Nevertheless, the argon impurity in both the type I and type II films is ≤1.0 at. %, which is far less than those obtained in the biased rf diode sputtered GdCo films. Also, the distribution of argon is uniform in the film as observed from the Rutherford backscattering spectrometry.
UR - http://www.scopus.com/inward/record.url?scp=36549098525&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=36549098525&partnerID=8YFLogxK
U2 - 10.1063/1.97020
DO - 10.1063/1.97020
M3 - Article
AN - SCOPUS:36549098525
VL - 48
SP - 730
EP - 732
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 11
ER -