Magnetic anisotropy in dc diode getter sputtered GdCo films - how important is the argon content in the films

D. D. Bacon; M. Hong; E. M. Gyorgy; P. K. Gallagher; S. Nakahara; Leonard C Feldman

doi:10.1063/1.97020

Magnetic anisotropy in dc diode getter sputtered GdCo films - how important is the argon content in the films

D. D. Bacon, M. Hong, E. M. Gyorgy, P. K. Gallagher, S. Nakahara, Leonard C Feldman

Rutgers University

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Amorphous magnetic GdCo films were prepared by a dc diode getter sputtering technique with no bias field applied to the substrate during the film growth. Films (type I) obtained using 1.0 kV and 60 mTorr Ar during the sputtering show perpendicular anisotropy with K^eff _u =1.5×10 ⁵ erg/cm³. Films (type II) deposited at 2.0 kV and 28 mTorr Ar exhibit magnetic isotropy with Kⁱⁿ _u≊0. However, the actual argon content in the type II films is three times of that in the type I films. Nevertheless, the argon impurity in both the type I and type II films is ≤1.0 at. %, which is far less than those obtained in the biased rf diode sputtered GdCo films. Also, the distribution of argon is uniform in the film as observed from the Rutherford backscattering spectrometry.

Original language	English
Pages (from-to)	730-732
Number of pages	3
Journal	Applied Physics Letters
Volume	48
Issue number	11
DOIs	https://doi.org/10.1063/1.97020
Publication status	Published - 1986

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.97020

Fingerprint Dive into the research topics of 'Magnetic anisotropy in dc diode getter sputtered GdCo films - how important is the argon content in the films'. Together they form a unique fingerprint.

Cite this

@article{c096c108a36047d4a2a51e6c1cb0e053,

title = "Magnetic anisotropy in dc diode getter sputtered GdCo films - how important is the argon content in the films",

abstract = "Amorphous magnetic GdCo films were prepared by a dc diode getter sputtering technique with no bias field applied to the substrate during the film growth. Films (type I) obtained using 1.0 kV and 60 mTorr Ar during the sputtering show perpendicular anisotropy with Keff u =1.5×10 5 erg/cm3. Films (type II) deposited at 2.0 kV and 28 mTorr Ar exhibit magnetic isotropy with Kin u≊0. However, the actual argon content in the type II films is three times of that in the type I films. Nevertheless, the argon impurity in both the type I and type II films is ≤1.0 at. %, which is far less than those obtained in the biased rf diode sputtered GdCo films. Also, the distribution of argon is uniform in the film as observed from the Rutherford backscattering spectrometry.",

author = "Bacon, {D. D.} and M. Hong and Gyorgy, {E. M.} and Gallagher, {P. K.} and S. Nakahara and Feldman, {Leonard C}",

year = "1986",

doi = "10.1063/1.97020",

language = "English",

volume = "48",

pages = "730--732",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Magnetic anisotropy in dc diode getter sputtered GdCo films - how important is the argon content in the films

AU - Bacon, D. D.

AU - Hong, M.

AU - Gyorgy, E. M.

AU - Gallagher, P. K.

AU - Nakahara, S.

AU - Feldman, Leonard C

PY - 1986

Y1 - 1986

N2 - Amorphous magnetic GdCo films were prepared by a dc diode getter sputtering technique with no bias field applied to the substrate during the film growth. Films (type I) obtained using 1.0 kV and 60 mTorr Ar during the sputtering show perpendicular anisotropy with Keff u =1.5×10 5 erg/cm3. Films (type II) deposited at 2.0 kV and 28 mTorr Ar exhibit magnetic isotropy with Kin u≊0. However, the actual argon content in the type II films is three times of that in the type I films. Nevertheless, the argon impurity in both the type I and type II films is ≤1.0 at. %, which is far less than those obtained in the biased rf diode sputtered GdCo films. Also, the distribution of argon is uniform in the film as observed from the Rutherford backscattering spectrometry.

AB - Amorphous magnetic GdCo films were prepared by a dc diode getter sputtering technique with no bias field applied to the substrate during the film growth. Films (type I) obtained using 1.0 kV and 60 mTorr Ar during the sputtering show perpendicular anisotropy with Keff u =1.5×10 5 erg/cm3. Films (type II) deposited at 2.0 kV and 28 mTorr Ar exhibit magnetic isotropy with Kin u≊0. However, the actual argon content in the type II films is three times of that in the type I films. Nevertheless, the argon impurity in both the type I and type II films is ≤1.0 at. %, which is far less than those obtained in the biased rf diode sputtered GdCo films. Also, the distribution of argon is uniform in the film as observed from the Rutherford backscattering spectrometry.

UR - http://www.scopus.com/inward/record.url?scp=36549098525&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549098525&partnerID=8YFLogxK

U2 - 10.1063/1.97020

DO - 10.1063/1.97020

M3 - Article

AN - SCOPUS:36549098525

VL - 48

SP - 730

EP - 732

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -