Magnetism in MnxGe1-x semiconductors mediated by impurity band carriers

A. P. Li, J. F. Wendelken, J. Shen, Leonard C Feldman, J. R. Thompson, H. H. Weitering

Research output: Contribution to journalArticle

111 Citations (Scopus)

Abstract

We present a comprehensive study of ferromagnetism and magnetotransport in Mn-doped germanium, grown with molecular-beam epitaxy. Ferromagnetism in MnxGe1-x (0

Original languageEnglish
Article number195205
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number19
DOIs
Publication statusPublished - Nov 15 2005

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Ferromagnetism
Magnetism
ferromagnetism
Impurities
Semiconductor materials
Germanium
Galvanomagnetic effects
impurities
Molecular beam epitaxy
germanium
molecular beam epitaxy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Magnetism in MnxGe1-x semiconductors mediated by impurity band carriers. / Li, A. P.; Wendelken, J. F.; Shen, J.; Feldman, Leonard C; Thompson, J. R.; Weitering, H. H.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 72, No. 19, 195205, 15.11.2005.

Research output: Contribution to journalArticle

Li, A. P. ; Wendelken, J. F. ; Shen, J. ; Feldman, Leonard C ; Thompson, J. R. ; Weitering, H. H. / Magnetism in MnxGe1-x semiconductors mediated by impurity band carriers. In: Physical Review B - Condensed Matter and Materials Physics. 2005 ; Vol. 72, No. 19.
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