Magnetization-governed magnetoresistance anisotropy in the topological semimetal CeBi

Yang Yang Lyu, Fei Han, Zhi Li Xiao, Jing Xu, Yong Lei Wang, Hua Bing Wang, Jin Ke Bao, Duck Young Chung, Mingda Li, Ivar Martin, Ulrich Welp, Mercouri G. Kanatzidis, Wai Kwong Kwok

Research output: Contribution to journalArticle

Abstract

Magnetic topological semimetals, the latest member of topological quantum materials, are attracting extensive attention as they may lead to topologically driven spintronics. Currently, magnetotransport investigations on these materials are focused on the anomalous Hall effect. Here, we report on the magnetoresistance anisotropy of topological semimetal CeBi, which has tunable magnetic structures arising from localized Ce 4f electrons and exhibits both negative and positive magnetoresistances, depending on the temperature. We found that the angle dependence of the negative magnetoresistance, regardless of its large variation with the magnitude of the magnetic field and with temperature, is solely dictated by the field-induced magnetization that is orientated along a primary crystalline axis and flops under the influence of a rotating magnetic field. The results reveal the strong interaction between conduction electrons and magnetization in CeBi. They also indicate that magnetoresistance anisotropy can be used to uncover the magnetic behavior and the correlation between transport phenomena and magnetism in magnetic topological semimetals.

Original languageEnglish
Article number180407
JournalPhysical Review B
Volume100
Issue number18
DOIs
Publication statusPublished - Nov 21 2019

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Lyu, Y. Y., Han, F., Xiao, Z. L., Xu, J., Wang, Y. L., Wang, H. B., Bao, J. K., Chung, D. Y., Li, M., Martin, I., Welp, U., Kanatzidis, M. G., & Kwok, W. K. (2019). Magnetization-governed magnetoresistance anisotropy in the topological semimetal CeBi. Physical Review B, 100(18), [180407]. https://doi.org/10.1103/PhysRevB.100.180407