Materials characterization of alternative gate dielectrics

Brett W. Busch, Olivier Pluchery, Yves J. Chabal, David A. Muller, Robert L. Opila, J. Raynien Kwo, Eric Garfunkel

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

Continued scaling of microelectronic devices is demanding that alternatives to SiO2 as the gate dielectric be developed soon. This in turn has placed enormous pressure on the abilities of physical characterization techniques to address critical issues such as film and interface structure and composition, transport properties, and thermal or chemical stability. This article summarizes the strengths and capabilities of four techniques used for the materials characterization of alternative gate dielectrics: scanning transmission electron microscopy (STEM) in conjunction with electron energy-loss spectroscopy (EELS), medium-energy ion scattering (MEIS), infrared-absorption spectroscopy (IRAS), and x-ray photoelectron spectroscopy (XPS). The complementary nature of these techniques has allowed for a detailed picture of the various properties of alternative gate dielectrics, and in particular of the dielectric/silicon interface. Critical issues and features of several important alternative gate dielectrics, ZrO2, Al2O3, Y2O3, and Gd2O3, are explored in light of the well-studied SiO2/Si system.

Original languageEnglish
Pages (from-to)206-211
Number of pages6
JournalMRS Bulletin
Volume27
Issue number3
Publication statusPublished - Mar 2002

Fingerprint

Gate dielectrics
Electron energy loss spectroscopy
Chemical stability
Infrared absorption
Silicon
Photoelectron spectroscopy
Absorption spectroscopy
Microelectronics
Transport properties
ion scattering
Infrared spectroscopy
Thermodynamic stability
microelectronics
x ray spectroscopy
infrared absorption
Scattering
Ions
Transmission electron microscopy
absorption spectroscopy
X rays

Keywords

  • Chemical structure
  • Electron energy-loss spectroscopy (EELS)
  • High-κ dielectrics
  • High-dielectric-constant materials
  • Infrared-absorption spectroscopy (IRAS)
  • Medium-energy ion scattering (MEIS)
  • Physical characterization
  • Scanning transmission electron microscopy (STEM)
  • Thin films
  • X-ray photoelectron spectroscopy (XPS)

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Busch, B. W., Pluchery, O., Chabal, Y. J., Muller, D. A., Opila, R. L., Kwo, J. R., & Garfunkel, E. (2002). Materials characterization of alternative gate dielectrics. MRS Bulletin, 27(3), 206-211.

Materials characterization of alternative gate dielectrics. / Busch, Brett W.; Pluchery, Olivier; Chabal, Yves J.; Muller, David A.; Opila, Robert L.; Kwo, J. Raynien; Garfunkel, Eric.

In: MRS Bulletin, Vol. 27, No. 3, 03.2002, p. 206-211.

Research output: Contribution to journalArticle

Busch, BW, Pluchery, O, Chabal, YJ, Muller, DA, Opila, RL, Kwo, JR & Garfunkel, E 2002, 'Materials characterization of alternative gate dielectrics', MRS Bulletin, vol. 27, no. 3, pp. 206-211.
Busch BW, Pluchery O, Chabal YJ, Muller DA, Opila RL, Kwo JR et al. Materials characterization of alternative gate dielectrics. MRS Bulletin. 2002 Mar;27(3):206-211.
Busch, Brett W. ; Pluchery, Olivier ; Chabal, Yves J. ; Muller, David A. ; Opila, Robert L. ; Kwo, J. Raynien ; Garfunkel, Eric. / Materials characterization of alternative gate dielectrics. In: MRS Bulletin. 2002 ; Vol. 27, No. 3. pp. 206-211.
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