Materials science and integration bases for fabrication of (Ba xSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

W. Fan, B. Kabius, J. M. Miller, S. Saha, J. A. Carlisle, O. Auciello, R. P.H. Chang, R. Ramesh

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

An investigation on the synthesis and material properties of layered TiAl/Cu/Ta electrodes was performed to achieve the integration of Cu electrodes. The TiAl layer provided an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation while the Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate. Using the surface analytical methods, characterization of the Cu-based layered structure showed that two amorphous oxide layers were formed on both sides of the TiAl barrier.

Original languageEnglish
Pages (from-to)6192-6200
Number of pages9
JournalJournal of Applied Physics
Volume94
Issue number9
DOIs
Publication statusPublished - Nov 1 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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