Materials science and integration bases for fabrication of (Ba xSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

W. Fan, B. Kabius, J. M. Miller, S. Saha, J. A. Carlisle, O. Auciello, Robert P. H. Chang, R. Ramesh

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

An investigation on the synthesis and material properties of layered TiAl/Cu/Ta electrodes was performed to achieve the integration of Cu electrodes. The TiAl layer provided an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation while the Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate. Using the surface analytical methods, characterization of the Cu-based layered structure showed that two amorphous oxide layers were formed on both sides of the TiAl barrier.

Original languageEnglish
Pages (from-to)6192-6200
Number of pages9
JournalJournal of Applied Physics
Volume94
Issue number9
DOIs
Publication statusPublished - Nov 1 2003

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materials science
capacitors
fabrication
electrodes
thin films
oxidation
oxides
oxygen
synthesis

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Materials science and integration bases for fabrication of (Ba xSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes. / Fan, W.; Kabius, B.; Miller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, Robert P. H.; Ramesh, R.

In: Journal of Applied Physics, Vol. 94, No. 9, 01.11.2003, p. 6192-6200.

Research output: Contribution to journalArticle

Fan, W. ; Kabius, B. ; Miller, J. M. ; Saha, S. ; Carlisle, J. A. ; Auciello, O. ; Chang, Robert P. H. ; Ramesh, R. / Materials science and integration bases for fabrication of (Ba xSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes. In: Journal of Applied Physics. 2003 ; Vol. 94, No. 9. pp. 6192-6200.
@article{ffd414017e5049b589306cae5a400da3,
title = "Materials science and integration bases for fabrication of (Ba xSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes",
abstract = "An investigation on the synthesis and material properties of layered TiAl/Cu/Ta electrodes was performed to achieve the integration of Cu electrodes. The TiAl layer provided an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation while the Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate. Using the surface analytical methods, characterization of the Cu-based layered structure showed that two amorphous oxide layers were formed on both sides of the TiAl barrier.",
author = "W. Fan and B. Kabius and Miller, {J. M.} and S. Saha and Carlisle, {J. A.} and O. Auciello and Chang, {Robert P. H.} and R. Ramesh",
year = "2003",
month = "11",
day = "1",
doi = "10.1063/1.1616984",
language = "English",
volume = "94",
pages = "6192--6200",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Materials science and integration bases for fabrication of (Ba xSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

AU - Fan, W.

AU - Kabius, B.

AU - Miller, J. M.

AU - Saha, S.

AU - Carlisle, J. A.

AU - Auciello, O.

AU - Chang, Robert P. H.

AU - Ramesh, R.

PY - 2003/11/1

Y1 - 2003/11/1

N2 - An investigation on the synthesis and material properties of layered TiAl/Cu/Ta electrodes was performed to achieve the integration of Cu electrodes. The TiAl layer provided an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation while the Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate. Using the surface analytical methods, characterization of the Cu-based layered structure showed that two amorphous oxide layers were formed on both sides of the TiAl barrier.

AB - An investigation on the synthesis and material properties of layered TiAl/Cu/Ta electrodes was performed to achieve the integration of Cu electrodes. The TiAl layer provided an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation while the Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate. Using the surface analytical methods, characterization of the Cu-based layered structure showed that two amorphous oxide layers were formed on both sides of the TiAl barrier.

UR - http://www.scopus.com/inward/record.url?scp=0242468475&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0242468475&partnerID=8YFLogxK

U2 - 10.1063/1.1616984

DO - 10.1063/1.1616984

M3 - Article

AN - SCOPUS:0242468475

VL - 94

SP - 6192

EP - 6200

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

ER -