MBE growth and properties of Fe3(Al,Si) on GaAs(100)

M. Hong, H. S. Chen, J. Kwo, A. R. Kortan, J. P. Mannaerts, B. E. Weir, Leonard C Feldman

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

We report a successful epitaxial growth of an intermetallic compound Fe3(Al,Si) on GaAs(100). Fe3(Al,Si) has a BiF3 (DO3) structure with a lattice constant which can be adjusted to achieve a perfect lattice match with GaAs(100) face by tuning the relative concentration of Al to Si. The crystal growth was carried out in an MBE system consisting of dual growth chambers, one for III-V compound semiconductors and the other for growing metals ot group IV like Si. Sharp, elongated streaks were observed in the reflection high energy electron diffraction (RHEED) pattern after the deposition of one monolayer (ML) of Fe3(Al,Si), indicating the attainment of an atomically smooth surface. The streaky RHEED pattern sharpened further until a 34 Å (12 MLs) thickness was reached, and retained similar quality in thicker films. The crystal structure of the films was also characterized by high-resolution X-ray diffraction and Rutherford backscattering/channeling analysis. A rocking curve as narrow as 0.03° full width half maximum along (400) Bragg reflection was obtained for an Fe2.9(Al0.4Si0.7) film 1000 Å thick.

Original languageEnglish
Pages (from-to)984-988
Number of pages5
JournalJournal of Crystal Growth
Volume111
Issue number1-4
DOIs
Publication statusPublished - May 2 1991

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'MBE growth and properties of Fe3(Al,Si) on GaAs(100)'. Together they form a unique fingerprint.

  • Cite this

    Hong, M., Chen, H. S., Kwo, J., Kortan, A. R., Mannaerts, J. P., Weir, B. E., & Feldman, L. C. (1991). MBE growth and properties of Fe3(Al,Si) on GaAs(100). Journal of Crystal Growth, 111(1-4), 984-988. https://doi.org/10.1016/0022-0248(91)91119-U