Measurement of interfacial charge-transfer rate constants at n-type InP/CH3OH junctions

Katherine E. Pomykal, Nathan S Lewis

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Steady-state current density vs potential methods have been used to measure interfacial electron-transfer rate constants at n-type indium phosphide/liquid junctions. n-InP/CH3OH-1,1′-dimethylferrocene+/0, n-InP/CH3OH-ferrocene+/0, n-InP/CH3OH-tetrahydrofuran-decamethylferrocene+/0, and n-InP/CH3OH-1,1′-diphenyl-4,4′-dipyridinium 2+/+. contacts displayed bimolecular kinetic behavior in which the observed current density was first order in the concentration of electrons at the semiconductor surface and in the concentration of acceptors in the solution. Differential capacitance potential measurements were used to determine the energetics for the charge-transfer process as well as to determine the concentration of electrons at the semiconductor surface as a function of applied potential. These measurements indicated that the voltage dropped across the semiconductor space charge region varied linearly with changes in the Nernst potential of the solution, as expected for an ideally behaving semiconductor/liquid junction. The measured charge-transfer rate constants, ket, for these systems were ≈10-16 cm4 s-1, in excellent agreement with previous theoretical predictions.

Original languageEnglish
Pages (from-to)2476-2484
Number of pages9
JournalJournal of Physical Chemistry B
Volume101
Issue number14
Publication statusPublished - Apr 3 1997

Fingerprint

Charge transfer
Rate constants
charge transfer
Semiconductor materials
Electrons
Current density
current density
Indium phosphide
indium phosphides
Liquids
liquids
tetrahydrofuran
Electric space charge
space charge
electron transfer
electrons
Capacitance
capacitance
Kinetics
kinetics

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

Measurement of interfacial charge-transfer rate constants at n-type InP/CH3OH junctions. / Pomykal, Katherine E.; Lewis, Nathan S.

In: Journal of Physical Chemistry B, Vol. 101, No. 14, 03.04.1997, p. 2476-2484.

Research output: Contribution to journalArticle

@article{0df99c2d2ba14b4caf5b4086d05fb6e4,
title = "Measurement of interfacial charge-transfer rate constants at n-type InP/CH3OH junctions",
abstract = "Steady-state current density vs potential methods have been used to measure interfacial electron-transfer rate constants at n-type indium phosphide/liquid junctions. n-InP/CH3OH-1,1′-dimethylferrocene+/0, n-InP/CH3OH-ferrocene+/0, n-InP/CH3OH-tetrahydrofuran-decamethylferrocene+/0, and n-InP/CH3OH-1,1′-diphenyl-4,4′-dipyridinium 2+/+. contacts displayed bimolecular kinetic behavior in which the observed current density was first order in the concentration of electrons at the semiconductor surface and in the concentration of acceptors in the solution. Differential capacitance potential measurements were used to determine the energetics for the charge-transfer process as well as to determine the concentration of electrons at the semiconductor surface as a function of applied potential. These measurements indicated that the voltage dropped across the semiconductor space charge region varied linearly with changes in the Nernst potential of the solution, as expected for an ideally behaving semiconductor/liquid junction. The measured charge-transfer rate constants, ket, for these systems were ≈10-16 cm4 s-1, in excellent agreement with previous theoretical predictions.",
author = "Pomykal, {Katherine E.} and Lewis, {Nathan S}",
year = "1997",
month = "4",
day = "3",
language = "English",
volume = "101",
pages = "2476--2484",
journal = "Journal of Physical Chemistry B Materials",
issn = "1520-6106",
publisher = "American Chemical Society",
number = "14",

}

TY - JOUR

T1 - Measurement of interfacial charge-transfer rate constants at n-type InP/CH3OH junctions

AU - Pomykal, Katherine E.

AU - Lewis, Nathan S

PY - 1997/4/3

Y1 - 1997/4/3

N2 - Steady-state current density vs potential methods have been used to measure interfacial electron-transfer rate constants at n-type indium phosphide/liquid junctions. n-InP/CH3OH-1,1′-dimethylferrocene+/0, n-InP/CH3OH-ferrocene+/0, n-InP/CH3OH-tetrahydrofuran-decamethylferrocene+/0, and n-InP/CH3OH-1,1′-diphenyl-4,4′-dipyridinium 2+/+. contacts displayed bimolecular kinetic behavior in which the observed current density was first order in the concentration of electrons at the semiconductor surface and in the concentration of acceptors in the solution. Differential capacitance potential measurements were used to determine the energetics for the charge-transfer process as well as to determine the concentration of electrons at the semiconductor surface as a function of applied potential. These measurements indicated that the voltage dropped across the semiconductor space charge region varied linearly with changes in the Nernst potential of the solution, as expected for an ideally behaving semiconductor/liquid junction. The measured charge-transfer rate constants, ket, for these systems were ≈10-16 cm4 s-1, in excellent agreement with previous theoretical predictions.

AB - Steady-state current density vs potential methods have been used to measure interfacial electron-transfer rate constants at n-type indium phosphide/liquid junctions. n-InP/CH3OH-1,1′-dimethylferrocene+/0, n-InP/CH3OH-ferrocene+/0, n-InP/CH3OH-tetrahydrofuran-decamethylferrocene+/0, and n-InP/CH3OH-1,1′-diphenyl-4,4′-dipyridinium 2+/+. contacts displayed bimolecular kinetic behavior in which the observed current density was first order in the concentration of electrons at the semiconductor surface and in the concentration of acceptors in the solution. Differential capacitance potential measurements were used to determine the energetics for the charge-transfer process as well as to determine the concentration of electrons at the semiconductor surface as a function of applied potential. These measurements indicated that the voltage dropped across the semiconductor space charge region varied linearly with changes in the Nernst potential of the solution, as expected for an ideally behaving semiconductor/liquid junction. The measured charge-transfer rate constants, ket, for these systems were ≈10-16 cm4 s-1, in excellent agreement with previous theoretical predictions.

UR - http://www.scopus.com/inward/record.url?scp=0347630931&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347630931&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0347630931

VL - 101

SP - 2476

EP - 2484

JO - Journal of Physical Chemistry B Materials

JF - Journal of Physical Chemistry B Materials

SN - 1520-6106

IS - 14

ER -