Measurement of the electrical resistance of n-type Si microwire/p-type conducting polymer junctions for use in artificial photosynthesis

Jared P. Bruce, Sommayeh Asgari, Shane Ardo, Nathan S Lewis, Derek R. Oliver, Michael S. Freund

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The junction between n-type silicon microwires and p-type conducting polymer PEDOT:PSS (poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate)) was investigated using a soft contact method. Dopant levels within the microwires were varied during growth to give a highly-doped region for improved contact and a low-doped region for light absorption. The low-doped region of the microwires had a dopant density of 5 × 1017 cm-3 while the highly-doped region had an increased dopant density of 5 × 1018 cm-3 over ∼20 μm. Uniform, highly-doped microwires, with a dopant density of 4 × 1019 cm-3, were used as a comparison. Regions of highly-doped n-type Si microwires (ND = 5 × 1018 cm-3 and 4 × 1019 cm-3) contacted by PEDOT:PSS showed a significantly lower junction resistance compared to the low-doped (3 × 1017 cm-3) regions of the microwire. Junctions incorporating the metal catalyst used during growth were also investigated. Microwires with copper at the interface had similar current-voltage characteristics to those observed for the highly-doped microwire/conducting polymer junction; however, junctions that incorporated gold exhibited significantly lower resistances, decreasing the iR contribution of the junction by an order of magnitude with respect to the total voltage drop in the entire structure.

Original languageEnglish
Pages (from-to)27742-27748
Number of pages7
JournalJournal of Physical Chemistry C
Volume118
Issue number48
DOIs
Publication statusPublished - Dec 4 2014

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Acoustic impedance
photosynthesis
Photosynthesis
Conducting polymers
conducting polymers
electrical resistance
Doping (additives)
Silicon
Current voltage characteristics
Gold
Light absorption
Copper
Metals
low resistance
electric potential
electromagnetic absorption
Catalysts
gold
catalysts
copper

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Energy(all)

Cite this

Measurement of the electrical resistance of n-type Si microwire/p-type conducting polymer junctions for use in artificial photosynthesis. / Bruce, Jared P.; Asgari, Sommayeh; Ardo, Shane; Lewis, Nathan S; Oliver, Derek R.; Freund, Michael S.

In: Journal of Physical Chemistry C, Vol. 118, No. 48, 04.12.2014, p. 27742-27748.

Research output: Contribution to journalArticle

Bruce, Jared P. ; Asgari, Sommayeh ; Ardo, Shane ; Lewis, Nathan S ; Oliver, Derek R. ; Freund, Michael S. / Measurement of the electrical resistance of n-type Si microwire/p-type conducting polymer junctions for use in artificial photosynthesis. In: Journal of Physical Chemistry C. 2014 ; Vol. 118, No. 48. pp. 27742-27748.
@article{e1c9e690488a462e8af8a7227e175cc6,
title = "Measurement of the electrical resistance of n-type Si microwire/p-type conducting polymer junctions for use in artificial photosynthesis",
abstract = "The junction between n-type silicon microwires and p-type conducting polymer PEDOT:PSS (poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate)) was investigated using a soft contact method. Dopant levels within the microwires were varied during growth to give a highly-doped region for improved contact and a low-doped region for light absorption. The low-doped region of the microwires had a dopant density of 5 × 1017 cm-3 while the highly-doped region had an increased dopant density of 5 × 1018 cm-3 over ∼20 μm. Uniform, highly-doped microwires, with a dopant density of 4 × 1019 cm-3, were used as a comparison. Regions of highly-doped n-type Si microwires (ND = 5 × 1018 cm-3 and 4 × 1019 cm-3) contacted by PEDOT:PSS showed a significantly lower junction resistance compared to the low-doped (3 × 1017 cm-3) regions of the microwire. Junctions incorporating the metal catalyst used during growth were also investigated. Microwires with copper at the interface had similar current-voltage characteristics to those observed for the highly-doped microwire/conducting polymer junction; however, junctions that incorporated gold exhibited significantly lower resistances, decreasing the iR contribution of the junction by an order of magnitude with respect to the total voltage drop in the entire structure.",
author = "Bruce, {Jared P.} and Sommayeh Asgari and Shane Ardo and Lewis, {Nathan S} and Oliver, {Derek R.} and Freund, {Michael S.}",
year = "2014",
month = "12",
day = "4",
doi = "10.1021/jp509211k",
language = "English",
volume = "118",
pages = "27742--27748",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "48",

}

TY - JOUR

T1 - Measurement of the electrical resistance of n-type Si microwire/p-type conducting polymer junctions for use in artificial photosynthesis

AU - Bruce, Jared P.

AU - Asgari, Sommayeh

AU - Ardo, Shane

AU - Lewis, Nathan S

AU - Oliver, Derek R.

AU - Freund, Michael S.

PY - 2014/12/4

Y1 - 2014/12/4

N2 - The junction between n-type silicon microwires and p-type conducting polymer PEDOT:PSS (poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate)) was investigated using a soft contact method. Dopant levels within the microwires were varied during growth to give a highly-doped region for improved contact and a low-doped region for light absorption. The low-doped region of the microwires had a dopant density of 5 × 1017 cm-3 while the highly-doped region had an increased dopant density of 5 × 1018 cm-3 over ∼20 μm. Uniform, highly-doped microwires, with a dopant density of 4 × 1019 cm-3, were used as a comparison. Regions of highly-doped n-type Si microwires (ND = 5 × 1018 cm-3 and 4 × 1019 cm-3) contacted by PEDOT:PSS showed a significantly lower junction resistance compared to the low-doped (3 × 1017 cm-3) regions of the microwire. Junctions incorporating the metal catalyst used during growth were also investigated. Microwires with copper at the interface had similar current-voltage characteristics to those observed for the highly-doped microwire/conducting polymer junction; however, junctions that incorporated gold exhibited significantly lower resistances, decreasing the iR contribution of the junction by an order of magnitude with respect to the total voltage drop in the entire structure.

AB - The junction between n-type silicon microwires and p-type conducting polymer PEDOT:PSS (poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate)) was investigated using a soft contact method. Dopant levels within the microwires were varied during growth to give a highly-doped region for improved contact and a low-doped region for light absorption. The low-doped region of the microwires had a dopant density of 5 × 1017 cm-3 while the highly-doped region had an increased dopant density of 5 × 1018 cm-3 over ∼20 μm. Uniform, highly-doped microwires, with a dopant density of 4 × 1019 cm-3, were used as a comparison. Regions of highly-doped n-type Si microwires (ND = 5 × 1018 cm-3 and 4 × 1019 cm-3) contacted by PEDOT:PSS showed a significantly lower junction resistance compared to the low-doped (3 × 1017 cm-3) regions of the microwire. Junctions incorporating the metal catalyst used during growth were also investigated. Microwires with copper at the interface had similar current-voltage characteristics to those observed for the highly-doped microwire/conducting polymer junction; however, junctions that incorporated gold exhibited significantly lower resistances, decreasing the iR contribution of the junction by an order of magnitude with respect to the total voltage drop in the entire structure.

UR - http://www.scopus.com/inward/record.url?scp=84915758127&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84915758127&partnerID=8YFLogxK

U2 - 10.1021/jp509211k

DO - 10.1021/jp509211k

M3 - Article

VL - 118

SP - 27742

EP - 27748

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 48

ER -