Measurement of the energy-band relations of stabilized Si photoanodes using operando ambient pressure X-ray photoelectron spectroscopy

M. H. Richter, M. F. Lichterman, S. Hu, E. J. Crumlin, T. Mayer, S. Axnanda, M. Favaro, W. Drisdell, Z. Hussain, B. S. Brunschwig, N. S. Lewis, Z. Liu, H. J. Lewerenz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The energy-band relations and electronic properties for the lightabsorber/ protection-layer stack of TiO2-stabilized Si photoanodes have been determined by ambient pressure x-ray synchrotron radiation photoelectron spectroscopy under an applied potential (operando), from single core-level emission lines. The experiments have also been complemented with laboratory-based monochromatic XPS data. Electrochemical parameters are additionally derived directly from x-ray photoemission data, and a method is presented to derive interface-state densities from such operando data.

Original languageEnglish
Title of host publicationProcesses at the Semiconductor Solution Interface 6
EditorsC. O'Dwyer, D. N. Buckley, P. M. Vereecken, H. Wang, R. P. Lynch, O. M. Leonte, A. C. Hillier, A. Etcheberry
PublisherElectrochemical Society Inc.
Pages105-113
Number of pages9
Edition6
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2015
EventSymposium on Processes at the Semiconductor Solution Interface 6 - 227th ECS Meeting - Chicago, United States
Duration: May 24 2015May 28 2015

Publication series

NameECS Transactions
Number6
Volume66
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Processes at the Semiconductor Solution Interface 6 - 227th ECS Meeting
CountryUnited States
CityChicago
Period5/24/155/28/15

ASJC Scopus subject areas

  • Engineering(all)

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    Richter, M. H., Lichterman, M. F., Hu, S., Crumlin, E. J., Mayer, T., Axnanda, S., Favaro, M., Drisdell, W., Hussain, Z., Brunschwig, B. S., Lewis, N. S., Liu, Z., & Lewerenz, H. J. (2015). Measurement of the energy-band relations of stabilized Si photoanodes using operando ambient pressure X-ray photoelectron spectroscopy. In C. O'Dwyer, D. N. Buckley, P. M. Vereecken, H. Wang, R. P. Lynch, O. M. Leonte, A. C. Hillier, & A. Etcheberry (Eds.), Processes at the Semiconductor Solution Interface 6 (6 ed., pp. 105-113). (ECS Transactions; Vol. 66, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/06606.0105ecst