Measurement system for doping and alloying trends in new thermoelectric materials

T. Hogan, N. Ghelani, S. Loo, S. Sportouch, S. J. Kim, D. Y. Chung, M. G. Kanatzidis

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

Several new materials in the A2Bi8Se13, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ3 (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. To accommodate the large number of samples required for doping and alloying studies, a new measurement system has been designed with a high sample throughput. A second system is then utilized for complete characterization of the most promising samples. This paper presents a description of the systems and measurement techniques involved, with preliminary, data on some of the above mentioned compounds.

Original languageEnglish
Pages (from-to)671-674
Number of pages4
JournalInternational Conference on Thermoelectrics, ICT, Proceedings
Publication statusPublished - Dec 1 1999
Event18th International Conference on Thermoelectrics (ICT'99) - Baltimore, MD, USA
Duration: Aug 29 1999Sep 2 1999

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Measurement system for doping and alloying trends in new thermoelectric materials'. Together they form a unique fingerprint.

  • Cite this