Measurement system for doping and alloying trends in new thermoelectric materials

T. Hogan, N. Ghelani, S. Loo, S. Sportouch, S. J. Kim, D. Y. Chung, Mercouri G Kanatzidis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Several new materials in the A2Bi8Se13, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ3 (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. To accommodate the large number of samples required for doping and alloying studies, a new measurement system has been designed with a high sample throughput. A second system is then utilized for complete characterization of the most promising samples. This paper presents a description of the systems and measurement techniques involved, with preliminary, data on some of the above mentioned compounds.

Original languageEnglish
Title of host publicationInternational Conference on Thermoelectrics, ICT, Proceedings
PublisherIEEE
Pages671-674
Number of pages4
Publication statusPublished - 1999
Event18th International Conference on Thermoelectrics (ICT'99) - Baltimore, MD, USA
Duration: Aug 29 1999Sep 2 1999

Other

Other18th International Conference on Thermoelectrics (ICT'99)
CityBaltimore, MD, USA
Period8/29/999/2/99

Fingerprint

Alloying
Doping (additives)
Throughput

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hogan, T., Ghelani, N., Loo, S., Sportouch, S., Kim, S. J., Chung, D. Y., & Kanatzidis, M. G. (1999). Measurement system for doping and alloying trends in new thermoelectric materials. In International Conference on Thermoelectrics, ICT, Proceedings (pp. 671-674). IEEE.

Measurement system for doping and alloying trends in new thermoelectric materials. / Hogan, T.; Ghelani, N.; Loo, S.; Sportouch, S.; Kim, S. J.; Chung, D. Y.; Kanatzidis, Mercouri G.

International Conference on Thermoelectrics, ICT, Proceedings. IEEE, 1999. p. 671-674.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hogan, T, Ghelani, N, Loo, S, Sportouch, S, Kim, SJ, Chung, DY & Kanatzidis, MG 1999, Measurement system for doping and alloying trends in new thermoelectric materials. in International Conference on Thermoelectrics, ICT, Proceedings. IEEE, pp. 671-674, 18th International Conference on Thermoelectrics (ICT'99), Baltimore, MD, USA, 8/29/99.
Hogan T, Ghelani N, Loo S, Sportouch S, Kim SJ, Chung DY et al. Measurement system for doping and alloying trends in new thermoelectric materials. In International Conference on Thermoelectrics, ICT, Proceedings. IEEE. 1999. p. 671-674
Hogan, T. ; Ghelani, N. ; Loo, S. ; Sportouch, S. ; Kim, S. J. ; Chung, D. Y. ; Kanatzidis, Mercouri G. / Measurement system for doping and alloying trends in new thermoelectric materials. International Conference on Thermoelectrics, ICT, Proceedings. IEEE, 1999. pp. 671-674
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