Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C

M. L. Green, B. E. Weir, D. Brasen, Y. F. Hsieh, G. Higashi, A. Feygenson, Leonard C Feldman, R. L. Headrick

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

Traditional techniques for growing Si-Ge layers have centered around low-temperature growth methods such as molecular-beam epitaxy and ultrahigh vacuum chemical vapor deposition in order to achieve strain metastability and good growth control. Recognizing that metastable films are probably undesirable in state-of-the-art devices on the basis of reliability considerations, and that in general, crystal perfection increases with increasing deposition temperatures, we have grown mechanically stable Si-Ge films (i.e., films whose composition and thickness places them on or below the Matthews-Blakeslee mechanical equilibrium curve) at 900 °C by rapid thermal chemical vapor deposition. Although this limits the thickness and the Ge composition range, such films are exactly those required for high-speed heterojunction bipolar transistors and Si/Si-Ge superlattices, for example. The 900 °C films contain three orders of magnitude less oxygen than their limited reaction processing counterparts grown at 625 °C. The films are thermally stable as well, and do not interdiffuse more than about 20 Å after 950 °C for 20 min. Therefore, they can be processed with standard Si techniques. At 900 °C, the films exhibit growth rates of about 15-20 Å/s. We have also demonstrated the growth of graded layers of Si-Ge, and have determined that a strain gradient exists in these layers.

Original languageEnglish
Pages (from-to)745-751
Number of pages7
JournalJournal of Applied Physics
Volume69
Issue number2
DOIs
Publication statusPublished - 1991

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bipolar transistors
heterojunctions
vapor deposition
metastable state
ultrahigh vacuum
superlattices
molecular beam epitaxy
high speed
gradients
vacuum
oxygen
curves
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C. / Green, M. L.; Weir, B. E.; Brasen, D.; Hsieh, Y. F.; Higashi, G.; Feygenson, A.; Feldman, Leonard C; Headrick, R. L.

In: Journal of Applied Physics, Vol. 69, No. 2, 1991, p. 745-751.

Research output: Contribution to journalArticle

Green, M. L. ; Weir, B. E. ; Brasen, D. ; Hsieh, Y. F. ; Higashi, G. ; Feygenson, A. ; Feldman, Leonard C ; Headrick, R. L. / Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C. In: Journal of Applied Physics. 1991 ; Vol. 69, No. 2. pp. 745-751.
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