Mechanism and control of the metal-to-insulator transition in rocksalt tantalum nitride

L. Yu, C. Stampfl, D. Marshall, T. Eshrich, V. Narayanan, J. M. Rowell, N. Newman, Arthur J Freeman

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

We identify the previously unknown mechanism whereby rocksalt TaxN can be continuously tuned from conducting to insulating through changes in stoichiometry. Experimental measurements on thin films, combined with electronic structure calculations on a host of native defects, show that the tunability arises from changes in the free electron concentration as a result of localization at Ta vacancies (VTa). The observed enhanced resistivity, transition from electron to hole conduction at x∼0.6, and diminished mid-IR reflectance are consistent with the dominance of the VTa defect in nitrogen-rich material.

Original languageEnglish
Article number245110
Pages (from-to)2451101-2451105
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number24
Publication statusPublished - Jun 15 2002

ASJC Scopus subject areas

  • Condensed Matter Physics

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  • Cite this

    Yu, L., Stampfl, C., Marshall, D., Eshrich, T., Narayanan, V., Rowell, J. M., Newman, N., & Freeman, A. J. (2002). Mechanism and control of the metal-to-insulator transition in rocksalt tantalum nitride. Physical Review B - Condensed Matter and Materials Physics, 65(24), 2451101-2451105. [245110].