Mechanism for diamond nucleation and growth on single crystal copper surfaces implanted with carbon

T. P. Ong, Fulin Xiong, Robert P. H. Chang, C. W. White

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Abstract

The nucleation and growth of diamond crystals on single-crystal copper surfaces implanted with carbon ions has been studied. Microwave plasma-enhanced chemical vapor deposition was used for diamond growth. The single-crystal copper substrates were implanted either at room temperature or at elevated temperature (∼820°C) with carbon ions prior to diamond nucleation. This procedure leads to the formation of a graphite film on the copper surface which greatly enhances diamond crystallite nucleation. From our study we construct a simple lattice model for diamond growth on graphite as 〈111〉 diamond parallel to 〈0001〉graphite and 〈110〉diamond parallel to 〈112̄0〉 graphite.

Original languageEnglish
Pages (from-to)2083-2085
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number17
DOIs
Publication statusPublished - 1992

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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