Mechanism for diamond nucleation and growth on single crystal copper surfaces implanted with carbon

T. P. Ong, Fulin Xiong, Robert P. H. Chang, C. W. White

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

The nucleation and growth of diamond crystals on single-crystal copper surfaces implanted with carbon ions has been studied. Microwave plasma-enhanced chemical vapor deposition was used for diamond growth. The single-crystal copper substrates were implanted either at room temperature or at elevated temperature (∼820°C) with carbon ions prior to diamond nucleation. This procedure leads to the formation of a graphite film on the copper surface which greatly enhances diamond crystallite nucleation. From our study we construct a simple lattice model for diamond growth on graphite as 〈111〉 diamond parallel to 〈0001〉graphite and 〈110〉diamond parallel to 〈112̄0〉 graphite.

Original languageEnglish
Pages (from-to)2083-2085
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number17
DOIs
Publication statusPublished - 1992

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diamonds
nucleation
copper
carbon
single crystals
graphite
ions
vapor deposition
microwaves
room temperature
crystals
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Mechanism for diamond nucleation and growth on single crystal copper surfaces implanted with carbon. / Ong, T. P.; Xiong, Fulin; Chang, Robert P. H.; White, C. W.

In: Applied Physics Letters, Vol. 60, No. 17, 1992, p. 2083-2085.

Research output: Contribution to journalArticle

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